MH254
Specifications
Micropower CMOS Unipolar Hall Effect Switch
MH254 Hall-effect sensor is a temperature stable, stress-resistant, Low Tolerance of Sensitivity
micro-power switch. Superior high-temperature performance is made possible through a dynamic
offset cancellation that utilizes chopper-stabilization. This method reduces the offset voltage normally
caused by device over molding, temperature dependencies, and thermal stress.
MH254 is special made for low operation voltage, 1.65V, to active the chip which is includes the
following on a single silicon chip: voltage regulator, Hall voltage generator, small-signal amplifier,
chopper stabilization, Schmitt trigger, CMOS output driver. Advanced CMOS wafer fabrication
processing is used to take advantage of low-voltage requirements, component matching, very low
input-offset errors, and small component geometries. This device requires the presence of unipolar
magnetic fields for operation.
The package type is in a
Halogen Free
version has been verified by third party Lab.
Features and Benefits
CMOS Hall IC Technology
Strong RF noise protection
1.65 to 6V for battery-powered applications
Operation down to 1.65V, Unipolar Hall Switch Micro power consumption
High Sensitivity for reed switch replacement applications
Low sensitivity drift in crossing of Temp. range
Ultra Low power consumption at 5uA (Avg)
High ESD Protection, HBM > ±
4KV( min )
Totem-pole output
Applications
Solid state switch
Handheld Wireless Handset Awake Switch ( Flip Cell/PHS Phone/Note Book/Flip Video Set)
Magnet proximity sensor for reed switch replacement in low duty cycle applications
Water Meter
PDA
PDVD
NB
Pad PC
011515
Page 1 of 4
Rev. 1.01
MH254
Specifications
Micropower CMOS Unipolar Hall Effect Switch
Ordering Information
XXXXXXXXX - X
Sorting Code
Package type
Temperature Code
Part number
Company Name and Product Category
Company Name and Product Category
MH:MST Hall Effect/MP:MST Power MOSFET
Part number
181,182,183,184,185,248,249,276,477,381,381F,381R,382…..
If part # is just 3 digits, the forth digit will be omitted.
Temperature range
E: 85
℃,
I: 105
℃,
K: 125
℃,
L: 150
℃
Package type
UA:TO-92S,VK:TO-92S(4pin),VF:TO-92S(5pin),SO:SOT-23,
SQ:QFN-3,ST:TSOT-23,SN:SOT-553,SF:SOT-89(5pin)
Sorting
α,β,Blank…..
Part No.
MH254EST
Temperature Suffix
E (-40℃ to + 85℃)
Package Type
ST (TSOT-23)
Custom sensitivity selection is available by MST sorting technology
Functional Diagram
V
DD
Awake/Sleep
Timing Control
V
DD
Offset
Cancellation
Amp
Control
Logic
Out
Hall
Sensor
GND
Note:
Static sensitive device; please observe ESD precautions. Reverse V
DD
protection is not included. For reverse voltage
protection, a 100
Ω
resistor in series with V
DD
is recommended.
MH254, HBM > ±
4KV which is verified by third party lab.
011515
Page 2 of 4
Rev. 1.01
MH254
Specifications
Micropower CMOS Unipolar Hall Effect Switch
Absolute Maximum Ratings
At(Ta=25
℃
)
Characteristics
Supply voltage,(V
DD
)
Output Voltage,(V
out
)
Reverse Voltage , (V
DD
) (V
OUT
)
Magnetic flux density
Output current,(I
OUT
)
Operating temperature range, (Ta)
Storage temperature range, (Ts)
Maximum Junction Temp,(Tj)
Thermal Resistance
(θ
JA
)
VK / SN
Values
7
7
-0.3
Unlimited
1
-40 to +85
-65 to +150
150
227 / 540
49 / 390
550 / 230
Unit
V
V
V
Gauss
mA
℃
℃
℃
℃/W
℃/W
mW
(θ
JC
)
VK / SN
Package Power Dissipation, (P
D
)
VK / SN
rated conditions for extended periods may affect device reliability.
Note:
Exceeding the absolute maximum ratings may cause permanent damage. Exposure to absolute maximum-
Electrical Specifications
DC Operating Parameters
：
Ta=25
℃
, V
DD
=1.8V
Parameters
Supply Voltage,(V
DD
)
Test Conditions
Operating
Awake State
Min
1.65
Typ
1.4
3.6
5
Max
6
3
7
10
1
Units
Volts
mA
μA
μA
uA
V
V
uS
mS
%
KV
Supply Current,(I
DD
)
Sleep State
Average
Output Leakage
Output High Voltage,(V
OH
)
Current,(I
off
)
Output Low Voltage,(V
OL
)
Awake mode time,(T
aw
)
Sleep mode time,(T
SL
)
Duty Cycle,(D,C)
Electro-Static Discharge
Operating Point –(Bop)
)
Release Point-(Brp)
Hysteresis-(BHYS)
Output off
I
OUT
=0.5mA(Source)
I
OUT
=0.5mA(Sink)
Operating
Operating
HBM
N pole to branded side, B > BOP,
30
Oout On
N pole to branded side, B < BRP,
10
Vout Off
|BOPx - BRPx|
10
20
V
DD
-0.2
0.2
40
40
0.1
4
50
80
80
Gauss
Gauss
Gauss
011515
Page 3 of 4
Rev. 1.01
MH254
Specifications
Micropower CMOS Unipolar Hall Effect Switch
Typical application circuit
C1：10nF
C2：100pF
Sensor Location, package dimension and marking
MH254 Package
011515
Page 4 of 4
Rev. 1.01
嵌入式系统
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