MEM2310
N-Channel MOSFET MEM2310M3
General Description
MEM2310M3G Series N-channel enhancement mode
field-effect transistor ,produced with high cell density
DMOS trench technology, which is especially used to
minimize on-state resistance. This device particularly
suits low voltage applications, and low power
dissipation in a very small outline surface mount
package.
Features
30V/5.8A
R
DS(ON)
=25mΩ@ V
GS
=10V, I
D
=5.8A
R
DS(ON)
=28mΩ@ V
GS
=4.5V, I
D
=5A
R
DS(ON)
=37mΩ@ V
GS
=2.5V, I
D
=4A
High Density Cell Design For Ultra Low On-Resistance
Subminiature surface mount package:SOT23-3L
Pin Configuration
Typical Application
Battery management
High speed switch
Low power DC to DC converter
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain
Current
Total Power
Dissipation
T
A
=25℃
T
A
=70℃
T
A
=25℃
T
A
=70℃
Symbol
V
DSS
V
GSS
I
D
I
DM
Pd
T
j
T
stg
Ratings
30V
±
12
5.8
4.9
30
1.4
1
150
-65/150
Unit
V
V
A
A
W
℃
℃
Pulsed Drain Current
1,2
operating junction temperature
Storage Temperature Range
V6.0
www.microne.com.cn
1
MEM2310
Thermal Characteristics
Parameter
Thermal Resistance,Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
Thermal Resistance,Junction-to-Lead
Electrical Characteristics
MEM2310M3
Parameter
Symbol
Test Condition
Min
Type
Max
Unit
Static Characteristics
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Static Drain-Source On-Resistance
Forward Transconductance
Maximum Body-Diode Continuous
Current
Source-drain (diode forward) voltage
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
R
DS(ON)
g
FS
Is
V
SD
V
GS
=0V,I
S
=1A
0.72
V
GS
=0V, I
D
=250uA
V
DS
= V
GS
, I
D
=250uA
V
DS
=0V，V
GS
=12V
V
DS
=0V，V
GS
=-12V
V
DS
=24V V
GS
=0V
V
GS
=10V, I
D
=5.8A
V
GS
=4.5V, I
D
=5A
V
GS
=2.5V, I
D
=4A
V
DS
= 5 V, I
D
= 5A
10
25
28
37
15
2.5
1.0
30
0.7
35
0.88
0.5
-0.2
1.4
100
-100
1000
30
33
50
V
V
nA
nA
nA
mΩ
mΩ
mΩ
S
A
V
t≤10s
Steady-State
Steady-State
Symbol
RθJA
RθJA
RθJL
TYP.
65
85
43
MAX.
90
125
60
Unit
℃/W
℃/W
℃/W
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
Ciss
Coss
Crss
Rg
V
DS
= 15 V,
V
GS
= 0 V,
f = 1 MHz
V
GS
=0V, V
DS
=0V,
f=1MHz
823
99
77
1.2
3.6
Ω
1030
pF
Switching Characteristics
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall-Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
V
DD
= 15 V,
R
L
= 2.7Ω
V
GEN
= 10V,
Rg = 3 Ω
V
DS
= 15 V,
V
GS
= 4.5 V,
I
D
= 5.8A
7
15
38
3
11
1.6
2.8
14
30
76
6
14.3
2.08
3.64
nc
ns
1、Repetitive rating, pulse width limited by junction temperature.
2、Pulse width <300us , duty cycle <0.5%.
V6.0
www.microne.com.cn
2
微控制器 MCU
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
