MEM2303
P-Channel MOSFET MEM2303M3
General Description
MEM2303M3G Series P-channel enhancement mode
field-effect transistor ,produced with high cell density
DMOS trench technology, which is especially used to
minimize on-state resistance. This device particularly
suits low voltage applications, and low power
dissipation,and low power dissipation in a very small
outline surface mount package.
Features
l
-30V/-4.2A
R
DS(ON)
=55mΩ@ V
GS
=-10V,I
D
=-4.2A
R
DS(ON)
=62mΩ@ V
GS
=-4.5V,I
D
=-4A
R
DS(ON)
=72mΩ@ V
GS
=-2.5V,I
D
=-2.5A
High Density Cell Design For Ultra Low On-Resistance
Subminiature surface mount package:SOT23-3L
l
l
Pin Configuration
Typical Application
l
l
l
Power management
Load switch
Battery protection
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain
Current
Total Power
Dissipation
T
A
=25℃
T
A
=70℃
T
A
=25℃
T
A
=70℃
Symbol
V
DSS
V
GSS
I
D
I
DM
Pd
T
Opr
T
stg
Ratings
-30V
±12
-4.2
-3.5
-30
1.4
1
150
-65/150
Unit
V
V
A
A
W
℃
℃
Pulsed Drain Current
1,2
Operating Temperature Range
Storage Temperature Range
V6.0
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1
MEM2303
Thermal Characteristics
Parameter
Thermal Resistance,
Junction-to-Ambient
Thermal Resistance,
Junction-to-Ambient
Thermal Resistance,
Junction-to-Lead
Electrical Characteristics
MEM2303M3G
Parameter
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Static Drain-Source On-Resistance
Forward Transconductance
Maximum Body-Diode Continuous
Current
Source-drain(diode
voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
forward)
Symbol
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
R
DS(ON)1
R
DS(ON)2
R
DS(ON)3
g
FS
Is
V
SD
V
GS
=0V,I
D
=-1A
Dynamic Characteristics
Ciss
Coss
Crss
Rg
VGS=0V, VDS=-15V,
f=1MHz
954
115
77
6
Ω
pF
-0.8
Test Condition
V
GS
=0V, I
D
=-250uA
V
DS
= V
GS
, I
D
=-250uA
V
DS
=0V，V
GS
=12V
V
DS
=0V，V
GS
=-12V
V
DS
=-24V V
GS
=0V
V
GS
=-10V,I
D
=-4.2A
V
GS
=-4.5V,I
D
=-4A
V
GS
=-2.5V,I
D
=-2.5A
V
DS
= –5 V, I
D
= –2.8 A
7
Min
-30
-0.7
Type
-35
-1.0
3
-3
-3.5
55
62
72
11
-2.2
-1.0
-1.3
100
-100
-1000
58
65
90
Max
Unit
V
V
nA
nA
nA
mΩ
mΩ
mΩ
S
A
V
Static Characteristics
t≤10s
Steady-State
Steady-State
Symbol
RθJA
RθJA
RθJL
TYP.
65
85
43
MAX.
90
125
60
Unit
℃/W
℃/W
℃/W
VGS=0V, VDS=0V,
f=1MHz
Switching Characteristics
VGS=-10V,VDS=-15V,
RL=3.6Ω,RGEN=6Ω
V
DS
= -15 V,
V
GS
= -4.5 V,
I
D
= -4A
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall-Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
6.5
3.5
38
12
9.5
2
3
nc
ns
1、Pulse width limited by Max. junction temperature.
V6.0
2
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MEM2303
2、Pulse width <300us , duty cycle <0.5%.
Typical Performance Characteristics
V6.0
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