MEM2307M3G
P-Channel MOSFET MEM2307M3G
General Description
MEM2307M3G Series P-channel enhancement
mode field-effect transistor ,produced with high cell
density DMOS trench technology, which is especially
used to minimize on-state resistance. This device
particularly suits low voltage applications, and low
power dissipation, and low power dissipation in a
very small outline surface mount package.
l
l
Features
l
-30V/-4.1A
R
DS(ON)
＜88m
@ V
GS
=-10V,I
D
=-4.1A
R
DS(ON)
＜108m
@ V
GS
=-4.5V,I
D
=-3A
High Density Cell Design For Ultra Low On-Resistance
Subminiature surface mount package: SOT23-3
Pin Configuration
Typical Application
l
l
l
Power management
Load switch
Battery protection
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain
Current
Total Power
Dissipation
T
A
=25℃
T
A
=70℃
T
A
=25℃
T
A
=70℃
Symbol
V
DSS
V
GSS
I
D
I
DM
Pd
T
Opr
T
stg
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Ratings
-30V
±20
-4.1
-3.5
-20
1.4
1
150
-55/150
Unit
V
V
A
A
W
℃
℃
Page 1 of 5
Pulsed Drain Current
1,2
Operating Temperature Range
Storage Temperature Range
V06
MEM2307M3G
Thermal Characteristics
Parameter
Thermal Resistance,
Junction-to-Ambient
Thermal Resistance,
Junction-to-Ambient
Thermal Resistance,
Junction-to-Lead
t≤10s
Steady-State
Steady-State
Symbol
R
θJA
R
θJA
R
θJL
TYP.
65
85
43
MAX.
90
125
60
Unit
℃/W
℃/W
℃/W
Electrical Characteristics
Parameter
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Static Drain-Source
On-Resistance
Forward Transconductance
Maximum Body-Diode Continuous
Current
Source-drain (diode forward)
voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
Symbol
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
R
DS(ON)1
R
DS(ON)2
g
FS
Is
V
SD
V
GS
=0V,I
D
=-1A
Dynamic Characteristics
Ciss
Coss
Crss
Rg
VGS=0V, VDS=-15V,
f=1MHz
700
120
75
10
15
840
pF
0.77
Test Condition
V
GS
=0V, I
D
=-250uA
V
DS
= V
GS
, I
D
=-250uA
V
DS
=0V，V
GS
=20V
V
DS
=0V，V
GS
=-20V
V
DS
=-24V V
GS
=0V
V
GS
=-10V,I
D
=-4.1A
V
GS
=-4.5V,I
D
=-3A
V
DS
= –5 V, I
D
= –4A
5.5
8.2
-2.2
-1.0
Min
-30
-1
-1.3
-2
100
-100
-1000
88
108
Type
Max
Unit
V
V
nA
nA
nA
m
m
S
A
V
Static Characteristics
VGS=0V, VDS=0V,
f=1MHz
Switching Characteristics
VGS=-10V,VDS=-15V,
RL=3.6 ,RGEN=6
V
DS
= -15 V,
V
GS
= -4.5 V,
I
D
= -4A
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall-Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
8.6
5
28.2
13.5
14.3
3.1
3
nc
ns
1、Repetitive rating, pulse width limited by junction temperature.
2、The static characteristics are obtained using 80 µs pulses, duty cycle 0.5% max.
V06
www.microne.com.cn
Page 2 of 5
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