MEM2313
P-Channel MOSFET MEM2313
General Description
MEM2313SG Series Dual P-channel
enhancement
mode
field-effect
transistor,
Features
-30V/-6A
R
DS(ON)
=52mΩ@ V
GS
=-10V,I
D
=-6A
R
DS(ON)
=67mΩ@ V
GS
=-4.5V,I
D
=-4A
High Density Cell Design For Ultra Low On-Resistance
Surface mount package:SOP8
produced with high cell density DMOS trench
technology, which is especially used to minimize
on-state resistance. This device particularly
suits low voltage .
applications, and low power dissipation .
Pin Configuration
Typical Application
Power management
Load switch
Battery protection
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Pulsed Drain Current
1,2
Total Power Dissipation
Operating Temperature Range
Storage Temperature Range
T
A
=25℃
T
A
=70℃
T
Opr
T
stg
T
A
=25℃
T
A
=70℃
Symbol
V
DSS
V
GSS
I
D
I
DM
Pd
Ratings
-30V
±
20
-6
-4
-30
1.3
0.8
150
-65/150
Units
V
V
A
A
W
℃
℃
T
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MEM2313
hermal Characteristics
Parameter
Thermal Resistance,
Junction-to-Ambient
3
Steady-State
Symbol
R
θJA
Ratings
62.5
Units
℃/W
Electrical Characteristics
Parameter
Symbol
Test Condition
Min
Typ.
Max
Units
Static Characteristics
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Static Drain-Source On-Resistance
Forward Transconductance
Drain-Source Diode Forward Current
Source-drain (diode forward) voltage
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
R
DS(ON)1
R
DS(ON)2
g
FS
I
S
V
SD
V
GS
=0V, I
S
=-1A
-0.8
V
GS
=0V, I
D
=-250μA
V
DS
= V
GS
, I
D
=-250μA
V
DS
=0V, V
GS
=20V
V
DS
=0V, V
GS
=-20V
V
DS
=-24V , V
GS
=0V
V
GS
=-10V, I
D
=-6A
V
GS
=-4.5V, I
D
=-4A
V
DS
= –5 V, I
D
= –5 A
33
50
-30
-1.2
-34
-1.3
0.8
-0.8
-3.5
52
67
10
-1.3
-1.2
-2
100
-100
-300
65
80
V
V
nA
nA
nA
mΩ
mΩ
S
A
V
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
V
DS
= -15V,
V
GS
= 0 V,
f = 1 MHz
530
140
70
pF
Switching Characteristics
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall-Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
V
DD
= -15 V,
I
D
=-1 A,
V
GEN
= -10 V,
Rg = 6 Ω
V
DS
= -15 V,
V
GS
= -5V,
I
D
= -5A
8
15
15
10
10
2.2
2
15
25
ns
25
17
15
nc
1、Pulse width limited by Max. junction temperature.
2、Pulse width <300us , duty cycle <2%.
3、Surface Mounted on FR4 Board, t < 10 sec.
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MEM2313
Typical Performance Characteristics
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MEM2313
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MEM2313
Thermal characterization performed using the conditions described in note IC.
Transient thermal response will change depending the circuit board design.
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