FIR2N65ABPG
650V N-Channel MOSFET -I
PIN Connection TO-251(I-PAK)
Features:
□
□
□
□
□
□
□
Low Intrinsic Capacitances.
Excellent Switching Characteristics.
Extended Safe Operating Area.
Unrivalled Gate Charge :Qg=6.7nC (Typ.).
BVDSS=650V,I
D
=2A
R
DS
(on) :
5.0
Ω
(Max) @V
G
=10V
100% Avalanche Tested
G D S
Schematic dia
g
ram
D
G
S
Marking Diagram
YAWWVA
Y
A
WW
VA
= Year
= Assembly Location
= Work Week
FIR2N65ABP
= Version & Assembly plant
FIR2N65ABP
= Specific Device Code
Absolute Maximum Ratings
(Ta=25℃
unless otherwise noted)
Symbol
V
DSS
I
D
V
GS(TH)
E
AS
I
AR
P
D
T
j
T
stg
TL
Drain-Source Voltage
T
j
=25℃
Drain Current
T
j
=100℃
Gate Threshold Voltage
Single Pulse Avalanche Energy (note1)
Avalanche Current (note2)
Power Dissipation (Tj=25℃)
Junction Temperature(Max)
Storage Temperature
Maximum lead temperature for soldering purpose,1/8” from
case for 5 seconds
Parameter
Value
650
2.0
1.25
±30
120
2
44
150
-55~+150
300
Unit
V
A
V
mJ
A
W
℃
℃
℃
Thermal Characteristics
Symbol
R
θJC
R
θJA
Parameter
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
Typ.
-
-
Max.
2.84
110
REV:1.0
Unit
℃/W
℃/W
Page 1/8
@ 2018 Copyright By American First Semiconductor
FIR2N65ABPG
Electrical Characteristics
(Ta=25℃ unless otherwise noted)
Symbol
Off Characteristics
BV
DSS
△
BVDSS/
△
TJ
Parameter
Test Condition
Min.
Typ.
Max.
Unit
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-body leakage Current,
Forward
Gate-body leakage Current,
Reverse
I
D
=250μA，V
GS
=0
I
D
=250μA ,Reference
to 25℃
V
DS
=650V, V
GS
=0V
V
DS
=520V, Tj=125℃
V
GS
=+30V, V
DS
=0V
V
GS
=-30V, V
DS
=0V
650
-
-
-
-
-
-
0.6
-
-
-
-
-
-
1
10
100
V
V/℃
μA
I
DSS
I
GSSF
I
GSSR
nA
-100
On Characteristics
V
GS(TH)
R
DS(ON)
Date Threshold Voltage
Static Drain-Source
On-Resistance
I
D
=250μA,V
DS
=V
GS
I
D
=1A,V
GS
=10V
2
-
-
-
4
5.0
V
Ω
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
=25V，V
GS
=0，
f=1.0MHz
-
-
-
320
40
5
10
25
20
24
6.7
1.9
1.8
-
-
-
-
-
-
-
-
-
-
nC
ns
pF
Switching Characteristics
Td(on)
Tr
Td(off)
Tf
Qg
Qgs
Qgd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DS
=520V,V
GS
=10V，
I
D
=2A (Note 3,4)
V
DD
=325V，I
D
=2A
R
G
=25Ω (Note 3,4)
-
-
-
-
-
-
-
Drain-Source Diode Characteristics and Maximum Ratings
Is
I
SM
V
SD
Trr
Qrr
Max. Diode Forward Current
Max. Pulsed Forward Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
-
-
I
D
=2A
I
S
=2A,V
GS
=0V
diF/dt=100A/μs
(Note3)
-
-
-
-
-
-
-
-
368
1.0
2
8
1.5
-
-
A
V
nS
μC
Notes : 1, L=55mH, IAS=2A, VDD=50V, RG=25Ω, Starting TJ =25°C
2, Repetitive Rating : Pulse width limited by maximum junction temperature
3, Pulse Test : Pulse Width
≤
300μs, Duty Cycle
≤
2%
4, Essentially Independent of Operating Temperature
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