FIR12N60FG
Advanced N-Ch Power MOSFET
PIN Connection
TO-220F
Switchng Regulator Application
Features
BV
DDS
=600V (Min.)
Low gate charge: Q
g
=41nC (Typ.)
Low drain-source On resistance: R
DS(on)
=0.65Ω (Max.)
100% avalanche tested
RoHS compliant device
G
D
S
D
G
S
Marking Diagram
Y
A
YAWW
= Year
= Assembly Location
= Work Week
WW
FIR12N60F
FIR12N60F
= Specific Device Code
Absolute maximum ratings
(T
C
=25C unless otherwise noted)
Characteristic
Drain-source voltage
Gate-source voltage
Drain current (DC)
*
Drain current (Pulsed)
*
Single pulsed avalanche energy
(Note 2)
Repetitive avalanche current
(Note 1)
Repetitive avalanche energy
(Note 1)
Power dissipation
Junction temperature
Storage temperature range
* Limited only maximum junction temperature
Symbol
V
DSS
V
GSS
I
D
T
c
=25C
T
c
=100C
I
DM
E
AS
I
AR
E
AR
P
D
T
J
T
stg
Rating
600
30
13
8.2
52
544
13
4.5
45
150
-55~150
Unit
V
V
A
A
A
mJ
A
mJ
W
C
C
@ 2010 Copyright By American First Semiconductor
Page 1/7
FIR12N60FG
Thermal Characteristics
Characteristic
Thermal resistance, junction to case
Thermal resistance, junction to ambient
Symbol
R
th(j-c)
R
th(j-a)
Rating
Max. 2.77
Max. 62.5
Unit
C/W
Electrical Characteristics
(T
C
=25C unless otherwise noted)
Characteristic
Drain-source breakdown voltage
Gate threshold voltage
Drain-source cut-off current
Gate leakage current
Drain-source on-resistance
Forward transfer conductance
(Note 3)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
(Note 3, 4)
Rise time
(Note 3, 4)
Turn-off delay time
(Note 3, 4)
Fall time
(Note 3, 4)
Total gate charge
(Note 3, 4)
Gate-source charge
(Note 3, 4)
Gate-drain charge
(Note 3, 4)
Symbol
BV
DSS
V
GS(th)
I
DSS
I
GSS
R
DS(ON)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
V
DS
=480V, V
GS
=10V,
I
D
=13A
V
DD
=300V, I
D
=13A,
R
G
=25Ω
V
DS
=25V, V
GS
=0V,
f=1.0MHz
Test Condition
I
D
=250uA, V
GS
=0
I
D
=250uA, V
DS
=V
GS
V
DS
=500V, V
GS
=0V
V
DS
=600V, T
c
=125
C
V
DS
=0V, V
GS
=30V
V
GS
=10V, I
D
=6.5A
V
DS
=10V, I
D
=6.5A
Min.
600
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
-
0.55
10
2162
183
14.6
30
85
140
90
41
13
10.5
Max.
-
4
1
100
100
0.65
-
2882
244
19.4
-
-
-
-
63
-
-
nC
ns
pF
Unit
V
V
uA
uA
nA
S
Source-Drain Diode Ratings and Characteristics
(T
C
=25C unless otherwise noted)
Characteristic
Source current (DC)
Source current (Pulsed)
Forward voltage
Reverse recovery time
(Note 3, 4)
Reverse recovery charge
(Note 3, 4)
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
Test Condition
Integral reverse diode
in the MOSFET
V
GS
=0V, I
S
=13A
I
S
=13A, V
GS
=0V
dI
S
/dt=-100A/us
Min.
-
-
-
-
-
Typ.
-
-
-
510
4.3
Max.
13
52
1.4
-
-
Unit
A
A
V
ns
uC
Note:
1. Repeated rating: Pulse width limited by safe operating area
2. L=5.9mH, I
AS
=13A, V
DD
=50V, R
G
=25, Starting T
J
=25C
3. Pulse test: Pulse width≤300us, Duty cycle≤2%
4. Essentially independent of operating temperature typical characteristics
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