FIR12N65FG
Advanced N-Ch Power MOSFET
PIN Connection
TO-220F
Switchng Regulator Application
Features
High Voltage : BV
DSS
=650V(Min.)
Low C
rss
: C
rss
=14.6pF(Typ.)
Low gate charge : Qg=41nC(Typ.)
Low R
DS(on)
: R
DS(on)
=0.65Ω(Max.)
G
D
S
D
G
S
Marking Diagram
Y
A
YAWW
= Year
= Assembly Location
= Work Week
WW
FIR12N65F
FIR12N65F
= Specific Device Code
Absolute maximum ratings
(
T
C
=25C unless otherwise noted)
Characteristic
Drain-source voltage
Gate-source voltage
Drain current (DC)
*
Drain current (Pulsed)
Power dissipation
Avalanche current (Single)
Single pulsed avalanche energy
Avalanche current (Repetitive)
Repetitive avalanche energy
Junction temperature
Storage temperature range
* Limited by maximum junction temperature
②
②
①
①
*
Symbol
V
DSS
V
GSS
I
D
T
C
=25℃
T
C
=100℃
I
DM
P
D
I
AS
E
AS
I
AR
E
AR
T
J
T
stg
Rating
650
30
12
9.0
48
51
12
790
12
7.6
150
-55~150
Unit
V
V
A
A
A
W
A
mJ
A
mJ
C
Characteristic
Thermal
resistance
Junction-case
Junction-ambient
Symbol
R
th(J-C)
R
th(J-A)
Typ.
-
-
Max.
2.6
120
Unit
℃
/W
@ 2010 Copyright By American First Semiconductor
Page 1/7
FIR12N65FG
Electrical Characteristics
(T
C
=25C unless otherwise noted)
Characteristic
Drain-source breakdown voltage
Gate threshold voltage
Drain-source cut-off current
Gate leakage current
Drain-source on-resistance
Forward transfer conductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
④
④
Symbol
BV
DSS
V
GS(th)
I
DSS
I
GSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Test Condition
I
D
=250uA, V
GS
=0V
I
D
=250uA, V
DS
=V
GS
V
DS
=650V, V
GS
=0V
V
DS
=0V, V
GS
=30V
V
GS
=10V, I
D
=6.0A
V
DS
=10V, I
D
=6.0A
V
GS
=0V, V
DS
=25V
f=1 MHz
Min. Typ. Max.
650
2.0
-
-
-
-
-
-
-
-
-
-
-
-
0.65
10
1476
152
4.5
37
62
47
90
24
8
7.5
-
4.0
1
100
0.80
-
-
-
-
-
-
-
-
-
-
-
Unit
V
V
uA
nA
S
pF
V
DD
=300V, I
D
=12A
R
G
=25Ω
-
③
④
-
-
ns
V
DS
=520V, V
GS
=10V
I
D
=12A
-
-
nC
③
④
-
Source-Drain Diode Ratings and Characteristics
(T
C
=25C unless otherwise noted)
Characteristic
Source current (DC)
Source current (Pulsed)
Forward voltage
Reverse recovery time
Reverse recovery charge
①
④
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
Test Condition
Integral reverse diode
in the MOSFET
V
GS
=0V, I
S
=12A
I
S
=12A, V
GS
=0V
dI
F
/dt=100A/us
Min.
-
-
-
-
-
Typ. Max. Unit
-
-
-
600
5.7
12
48
1.4
-
-
A
V
ns
uC
Note ;
①
Repetitive rating : Pulse width limited by maximum junction temperature
②
L=1.8mH, I
AS
=6.6A, V
DD
=140V, R
G
=25Ω, Starting T
J
=25℃
③
Pulse Test : Pulse width≤300us, Duty cycle≤2%
④
Essentially independent of operating temperature
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Page 2/7
FIR12N65FG
Electrical Characteristic Curves
Fig. 1 I
D
- V
DS
℃
Fig. 2 I
D
- V
GS
-
Fig. 3 R
DS(on)
- I
D
Fig. 4 I
S
- V
SD
℃
Fig. 5 Capacitance - V
DS
Fig.6 V
GS
- Q
G
℃
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Page 3/7
FIR12N65FG
Electrical Characteristic Curves
Fig. 7 V
DSS
- T
J
Fig.8 R
DS(on)
- T
J
C
C
Fig. 9 I
D
- T
C
Fig. 10 Safe Operating Area
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Page 4/7
FIR12N65FG
Fig. 11 Gate Charge Test Circuit & Waveform
Fig. 12 Resistive Switching Test Circuit & Waveform
Fig. 13 E
AS
Test Circuit & Waveform
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Page 5/7
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