FIR4N60FG
Advanced N-Ch Power MOSFET
PIN Connection
General Description
FIR4N60FG
proprietary
is an N-channel enhancement mode power
F-Cell
TM
structure
VDMOS
technology.
The
MOS field effect transistor which is produced using Silan
improved planar stripe cell and the improved guard ring
terminal have been especially tailored to minimize on-state
resistance, provide superior switching performance, and
withstand high energy pulse in the avalanche and commutation
mode.
These devices are widely used in AC-DC power suppliers, DC
DC converters and H-bridge PWM motor drivers.
TO-220F
G
D
S
2
Features
•
•
•
•
•
4A,600V,R
DS(on)
（
typ
）
=2.0
Ω@V
GS
=10V
Low gate charge
Low Crss
Fast switching
Improved dv/dt capability
YAWW
1
3
Marking Diagram
Y
A
WW
= Year
= Assembly Location
= Work Week
FIR4N60F
FIR4N60F
= Specific Device Code
Absolute Maximum Ratings (Ta = 25
o
C
unless otherwise noted; reference only
)
Characteristics
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Drain Current Pulsed
Power Dissipation(T
C
=25°C)
-Derate above 25°C
Single Pulsed Avalanche Energy(Note
1)
Operation Junction Temperature Range
Storage Temperature Range
T
C
=25°C
T
C
=100°C
Symbol
V
DS
V
GS
I
D
I
DM
P
D
Ratings
600
±30
4.0
2.5
16
33
0.26
217
-55½+150
-55½+150
Unit
V
V
A
A
W
W/°C
mJ
°C
°C
E
AS
T
J
T
stg
@ 2014 Copyright By American First Semiconductor
Page 1/6
FIR4N60FG
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
R
θJC
R
θJA
Ratings
1.61
110
Unit
°C/W
°C/W
Electrical Characteristics (Ta = 25
o
C
unless otherwise noted; reference only
)
Characteristics
Drain -Source Breakdown Voltage
Symbol
B
VDSS
Test conditions
25
°
C,
V
GS
=0V, I
D
=250µA
125
°
C,
V
GS
=0V, I
D
=250µA
25
°
C,
V
DS
=800V, V
GS
=0V
125
°
C,
V
DS
=800V, V
GS
=0V
150
°
C,
V
DS
=800V, V
GS
=0V
Min.
600
600
--
--
--
--
2.0
--
--
--
--
--
--
--
Typ.
--
--
--
--
--
--
--
2.0
509.00
57.57
2.59
14.20
27.73
34.67
28.53
11.88
3.33
4.90
Max.
--
--
10
50
100
Unit
V
V
uA
uA
uA
Drain-Source Leakage Current
I
DSS
Gate-Source Leakage Current
Gate Threshold Voltage
Static Drain- Source On State
Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
I
GSS
V
GS(th)
R
DS(on)
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
V
GS
=±30V, V
DS
=0V
V
GS
= V
DS
, I
D
=250µA
V
GS
=10V, I
D
=2A
±100
4.0
2.4
--
--
--
--
--
--
--
--
--
--
nA
V
Ω
V
DS
=25V,V
GS
=0V,
f=1.0MHZ
V
DD
=300V,I
D
=4A,
R
G
=25Ω
(Note2,3)
V
DS
=480V,I
D
=4A,
V
GS
=10V
(Note 2,3)
pF
ns
--
--
--
--
nC
Source-Drain Diode Ratings And Characteristics
Characteristics
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Notes:
1.
2.
3.
L=30mH, I
AS
=3.45A, V
DD
=100V, R
G
=25Ω, starting T
J
=25°C;
Pulse Test: Pulse width ≤300μs,Duty cycle≤2%;
Essentially independent of operating temperature.
Symbol
I
S
I
SM
V
SD
T
rr
Q
rr
Test conditions
Integral Reverse P-N
Junction Diode in the
MOSFET
I
S
=4.0A,V
GS
=0V
I
S
=4.0A,V
GS
=0V,
dI
F
/dt=100A/µs (Note 2)
Min.
--
--
--
--
--
Typ.
--
--
--
408
1.98
Max.
4.0
16
1.4
--
--
A
V
ns
µC
Unit
www.First-semi.com
Page 2/6
FIR4N60FG
Typical Characteristics
Figure 1. On-Region Characteristics
10
Variable
V
GS
=4.5V
V
GS
=5V
V
GS
=5.5V
V
GS
=6V
V
GS
=7V
V
GS
=8V
Figure 2. Transfer Characteristics
100
-55°C
25°C
150°C
Drain Current
–
I
D
(A)
Drain Current
–
I
D
(A)
10
1
V
GS
=10V
V
GS
=15V
1
Notes:
1.250µS pulse test
2.V
DS
=50V
Notes:
1.250µS pulse test
2.T
C
=25°C
0.1
0.1
1
10
100
0.1
0
1
2
3
4
5
6
7
8
9 10
Drain-Source Voltage
–
V
DS
(V)
Figure 3. On-Resitance Variation vs.
Drain Current and Gate Voltage
Gate-Source Voltage– V
GS
(V)
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current and Temperature
100
Drain-Source On-Resistance
–
R
DSON)
(Ω)
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
V
GS
=10V
V
GS
=20V
Reverse Drain Current
–
I
DR
(A)
-55°C
25°C
150°C
10
Notes:
1.250µS pulse test
2.V
GS
=0V
1
Note: T
J
=25°C
2
4
6
8
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Drain Current
–
I
D
(A)
Source-Drain Voltage– V
SD
(V)
Figure 5. Capacitance Characteristics
1000
Gate-Source Voltage– V
GS
(V)
Figure 6. Gate Charge Characteristics
12
V
DS
=480V
V
DS
=300V
V
DS
=120V
900
800
Capasistance(pF)
C
iss
=C
gs
+C
gd
(C
ds
=shorted)
C
oss
=C
ds
+C
gd
C
rss
=C
gd
10
8
6
4
2
700
600
500
400
300
200
100
0
0.1
1
10
100
C
iss
C
oss
C
rss
Notes:
1. V
GS
=0V
2. f=1MHz
Note: I
D
=4.0A
0
0
2
4
6
8
10
12
14
Drain-Source Voltage
–
V
DS
(V)
Total Gate Charge
–
Q
g
(nC)
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Page 3/6
FIR4N60FG
Typical Characteristics(Continued)
1.2
Drain-Source Breakdown
Voltage(Normalized)
–
B
VDSS
Figure 7. Breakdown Voltage Variation
vs. Temperature
Drain-Source On-Resistance
(Normalized)
–
R
DS(ON)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
Figure 8. On-resistance Variation
vs. Temperature
1.1
1.0
0.9
Notes:
1. V
GS
=0V
2. I
D
=250µA
Notes:
1. V
GS
=10V
2. I
D
=2.0A
0.8
-100
-50
0
50
100
150
200
-50
0
50
100
150
200
Junction Temperature
–
T
J
(°C)
Junction Temperature
–
T
J
(°C)
10
2
Figure 9. Max. Safe Operating
Area(FIR4N60FG)
Operation in This Area is
Limited by R
DS(ON)
4
Figure 10. Maximum Drain Current vs.
Case Temperature
Drain Current - I
D
(A)
1ms
10ms
Drain Current - I
D
(A)
10
1
100µs
3
10
0
2
DC
10
-1
Notes:
1.T
C
=25°C
2.T
j
=150°C
3.Single Pulse
1
10
-2
10
0
10
1
10
2
10
3
0
25
50
75
100
125
150
Case Temperature
–
T
C
(°C)
Drain Source Voltage - V
DS
(V)
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Page 4/6
FIR4N60FG
Typical Test Circuit
Gate Charge Test Circuit & Waveform
50KΩ
12V
200nF
300nF
Same Type
as DUT
V
GS
10V
Qg
V
DS
Qgs
Qgd
V
GS
DUT
3mA
Charge
Resistive Switching Test Circuit & Waveform
V
DS
V
GS
R
L
V
DD
V
DS
90%
R
G
DUT
10V
td(on)
V
GS
10%
tr
t
on
td(off)
t
f
t
off
Unclamped Inductive Switching Test Circuit & Waveform
L
E
AS
=
V
DS
I
D
R
G
DUT
10V
tp
B
VDSS
1
2
2
LI
AS
B
VDSS
-
V
DD
B
VDSS
I
AS
V
DD
V
DD
I
D(t)
V
DS(t)
tp
Time
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Page 5/6
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