General Purpose Transistors
General Purpose Transistors
DESCRIPTION & FEATURES
概述及特點
High Breakdown Voltage(BV
CEO
=-120V)
擊穿電壓高（BV
CEO
=-120V）
Complementary to FHTC3906
與
FHTC3906
互補
FHTA1514
SOT-23
PIN ASSIGNMENT
引腳說明
PIN NAME
FUNCTION
PIN NUMBER
引腳序號
管腳符號
功½
SOT-23
B
1
BASE
E
2
EMITTER
C
3
COLLECTOR
MAXIMUM RATINGS(T
a
=25℃)
最大額定值
CHARACTERISTIC
特性參數
Symbol
符號
Rating
額定值
Collector-Emitter Voltage
集電極-發射極電壓
-120
V
CEO
Collector-Base Voltage
集電極-基極電壓
V
CBO
-120
Emitter-Base Voltage
發射極-基極電壓
-5.0
V
EBO
Collector Current—Continuous
集電極電流-連續
-50
I
C
THERMAL CHARACTERISTICS
熱特性
CHARACTERISTIC
特性參數
Symbol
符號
Max
最大值
Collector Power Dissipation
集電極耗散功率
P
c
300
150，
T
j
,
Junction and Storage Temperature結溫和儲存溫度
-55 ~150
T
stg
DEVICE MARKING
打標
h
FE
(1) FHTA1514R=SR(180~390), FHTA1514S=SS(270~560)
ELECTRICAL CHARACTERISTICS
電特性
(T
A
=25℃ unless otherwise noted
如無特殊說明，溫度為
25℃)
Symbol
Test Condition
Min
Type
Characteristic
特性參數
符號
測試條件
最小值 典型值
Collector Cutoff Current
I
CBO
V
CB
=-100V,I
E
=0
—
—
集電極截止電流
Emitter Cutoff Current
I
EBO
V
EB
=-4V,I
C
=0
—
—
發射極截止電流
Collector-Emitter Breakdown Voltage
Unit
單½
Vdc
Vdc
Vdc
mAdc
Unit
單½
mW
℃
Max
最大值
-0.5
-0.5
—
—
—
560
-0.5
—
—
Unit
單½
µA
µA
V
V
V
—
V
MHz
pF
集電極-發射極擊穿電壓
Collector-Base Breakdown Voltage
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
h
FE
V
CE(sat)
f
T
C
ob
I
C
=-1.0mA
I
C
=-50µA
I
E
=-50µA
V
CE
=-6V,I
C
=-2mA
I
C
=-10mA,I
B
=-1mA
V
CE
=-12V,I
E
=2mA,
f=30MHz
V
CB
=-12V,I
E
=0,
f=1MHz
-120
-120
-5
180
—
—
—
—
—
—
—
—
140
3.2
集電極-基極擊穿電壓
Emitter-Base Breakdown Voltage
發射極-基極擊穿電壓
DC Current Gain
直流電流增益
Collector-Emitter Saturation Voltage
集電極-發射極½和壓降
Transition Frequency
特徵頻率
Collector Output Capacitance
輸出電容
1
微控制器 MCU
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