N‐Channel Logic Level Enhancement Mode Field Effect Transistor
EMB03N03HR
Product Summary:
BV
DSS
R
DSON (MAX.)
I
D
30V
3.0mΩ
75A
D
G
S
UIS, Rg 100% Tested
Pb‐Free Lead Plating & Halogen Free
PARAMETERS/TEST CONDITIONS
Gate‐Source Voltage
Continuous Drain Current
T
C
= 25 °C
T
C
= 100 °C
Pulsed Drain Current
1
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy
2
Power Dissipation
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 °C Unless Otherwise Noted)
SYMBOL
V
GS
I
D
LIMITS
±20
75
45
I
DM
I
AS
L = 0.1mH, I
D
=58A, R
G
=25Ω
L = 0.05mH
T
C
= 25 °C
T
C
= 100 °C
Operating Junction & Storage Temperature Range
T
j
, T
stg
E
AS
E
AR
P
D
160
58
168
84
50
20
‐55 to 150
°C
W
mJ
A
UNIT
V
100% UIS testing in condition of V
D
=15V, L=0.1mH, V
G
=10V, I
L
=40A, Rated V
DS
=30V N‐CH
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction‐to‐Case
Junction‐to‐Ambient
1
2
3
SYMBOL
R
JC
R
JA
TYPICAL
MAXIMUM
2.5
UNIT
°C / W
50
Pulse width limited by maximum junction temperature.
Duty cycle 1％
50°C / W when mounted on a 1 in
2
pad of 2 oz copper.
2015/1/8
p.1
ELECTRICAL CHARACTERISTICS (T
C
= 25 °C, Unless Otherwise Noted)
EMB03N03HR
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP
MAX
UNIT
STATIC
Drain‐Source Breakdown Voltage
Gate Threshold Voltage
Gate‐Body Leakage
Zero Gate Voltage Drain Current
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
V
GS
= 0V, I
D
= 250A
V
DS
= V
GS
, I
D
= 250A
V
DS
= 0V, V
GS
= ±20V
V
DS
= 24V, V
GS
= 0V
V
DS
= 20V, V
GS
= 0V, T
J
= 125 °C
On‐State Drain Current
1
Drain‐Source On‐State Resistance
1
I
D(ON)
R
DS(ON)
V
DS
= 10V, V
GS
= 10V
V
GS
= 10V, I
D
= 30A
V
GS
= 4.5V, I
D
= 24A
Forward Transconductance
1
g
fs
V
DS
= 5V, I
D
= 24A
30
1
75
1.5
2.5
3.0
25
3
±100
1
25
3.0
4.0
S
A
mΩ
nA
A
V
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
1,2
C
iss
C
oss
C
rss
R
g
Q
g
(V
GS
=10V)
Q
g
(
V
GS
=4.5V
)
Gate‐Source Charge
Gate‐Drain Charge
1,2
Turn‐On Delay Time
1,2
Rise Time
1,2
Turn‐Off Delay Time
Fall Time
1,2
1,2
1,2
V
GS
= 0V, V
DS
= 15V, f = 1MHz
2979
381
224
1.6
44.6
21.2
8.3
6.5
15
10
50
10
nS
nC
Ω
pF
V
GS
= 15mV, V
DS
= 0V, f = 1MHz
V
DS
= 15V, V
GS
= 10V,
I
D
= 30A
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
DS
= 15V,
I
D
= 24A, V
GS
= 10V, R
GS
= 2.7Ω
SOURCE‐DRAIN DIODE RATINGS AND CHARACTERISTICS (T
C
= 25 °C)
Continuous Current
Pulsed Current
Forward Voltage
1
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
1
3
I
S
I
SM
V
SD
t
rr
I
RM(REC)
Q
rr
I
F
= I
S
, V
GS
= 0V
I
F
= I
S
, dl
F
/dt = 100A / S
32
200
12
75
150
1.3
A
V
nS
A
nC
Pulse test : Pulse Width 300 sec, Duty Cycle 2％.
2015/1/8
p.2
2
3
EMB03N03HR
Independent of operating temperature.
Pulse width limited by maximum junction temperature.
Ordering & Marking Information:
Device Name: EMB03N03HR for EDFN 5 x 6
B03
N03R
ABCDEFG
B03N03R: Device Name
ABCDEFG: Date Code
2015/1/8
p.3
TYPICAL CHARACTERISTICS
EMB03N03HR
I ,Drain‐Source Current( A )
D
200
V =10V
GS
7V
160
5V
On‐Region Characteristics
3.0
On‐Resistance Variation with Drain Current and Gate Voltage
120
R ,Normalized
DS(ON)
Drain‐Source On‐Resistance
4.5V
2.5
2.0
V = 4.5V
GS
1.5
5V
7V
1.0
10V
80
40
0
R ,Normalized
DS(ON)
Drain‐Source On‐Resistance
1.8
0
0.5
V ,Drain‐Source Voltage( V )
DS
1
1.5
2
2.5
3
0.5
0
20
I ,Drain Current( A )
D
40
60
80
100
On‐Resistance Variation with Temperature
I = 30A
D
V = 10V
GS
On‐Resistance Variation with Gate‐Source Voltage
0.025
I = 25A
D
1.6
1.4
R ,On‐Resistance( ohm )
DS(ON)
0.020
0.015
1.2
0.010
°
T = 125 C
A
0.005
°
T = 25 C
A
1.0
0.8
0.6
‐50
0
‐25
0
25
50
75
100
125
150
2
4
6
8
10
T ,Junction Temperature(°C )
j
V ,Gate‐Source Voltage( V )
GS
100
V = 10V
DS
80
Transfer Characteristics
T = ‐55 °C
A
25 °C
Body Diode Forward Voltage Variation
with Source Current and Temperature
60
V = 0V
GS
10
125 °C
I ,Reverse Drain Current( A )
S
I ,Drain Current( A )
D
1
60
0.1
T = 125°C
A
25°C
‐55°C
40
0.01
20
0.001
0
0
1
V ,Gate‐Source Voltage( V )
GS
2
3
4
5
0.0001
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V ,Body Diode forward Voltage( V )
SD
2015/1/8
p.4
V
GS
,Gate-Source Voltage( V )
10
12
I
D
= 3 0 A
G a t e C h a r g e C h a r a c te r is tic s
EMB03N03HR
C a p a c it a n c e
C h a r a c t e r is t ic s
10
4
C is s
10V
15V
6
C‐Capacitance( pF )
V
DS
=5V
8
10
3
C o ss
C rss
4
10
2
2
f
=
1
M H z
V
G S
= 0
V
0
0
20
40
Q
g
,G a te C h a rg e ( n C )
60
0
5
10
15
20
25
30
V
D S
‐
D r a in
‐
S o u r c e
V o lt a g e (
V
)
1000
M a x im u m
S
a fe
O
p e ra tin g
A
re a
SINGLE PULSE MAXIMUM POWER DISSIPATION
3000
SINGLE PULSE
°
θ
JC
R = 2.5 C/W
°
T = 25 C
C
100
POWER( W )
100
)
(o
n
R
ds
m
L i
it
2500
10
1m
s
10
μ
s
0
μ
s
2000
I ,Drain Current( A )
D
10
10
ms
10
DC
0m
s
1500
1000
1
V
G S
1
0 V
=
S IN G L E
P
U L S E
°
R
θ
JC
2
.5
C
/W
=
°
T c
= 2
5
C
10
1
V
,D
ra in
‐S
o u rc e
V
o lta g e ( V
)
500
0 .1
0 .1
0
0.01
0.1
1
10
100
1000
SINGLE PULSE TIME ( mSEC )
1
D u ty
C
y c le
= 0
.5
T ra n sie n t T h e rm a l R e sp o n se
C
u rv e
r(t),Normalized Effective
Transient Thermal Resistance
0 .5
0 .3
0 .2
0 .1
0 .0 5
0 .0 3
0 .0 2
S in g le
P
u lse
0 .0 2
0 .0 1
1 .D u ty
C
y c le ,D
=
t2
2 .R
=
2 .5 °C /W
θ
JC
0 .2
0 .1
0 .0 5
N o te s
:
DM
t1
3 .T
J
‐ T = P * R (t)
C
θ
JC
0 .0 1
‐2
10
4 .R
(t)=
r(t) *
R
θ
JC
θ
JC
10
‐1
1
10
1
t ,T im e
( m
S E C
)
100
1000
2015/1/8
p.5
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