Product Summary:
BV
DSS
R
DSON (MAX.)
I
D
N‐CH
30V
17mΩ
10A
P‐CH
‐30V
20mΩ
‐8A
EMB17C03G
N & P‐Channel Logic Level Enhancement Mode Field Effect Transistor
UIS, Rg 100% Tested
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
Gate‐Source Voltage
SYMBOL
V
GS
N‐CH
±20
Continuous Drain Current
T
C
= 25 °C
T
C
= 100 °C
Pulsed Drain Current
1
Avalanche Current
Avalanche Energy
L = 0.1mH, ID=8A, RG=25Ω(N)
L = 0.1mH, ID=‐7A, RG=25Ω(P)
LIMITS
P‐CH
±20
‐8
‐6
‐32
‐10
2.45
UNIT
V
I
D
10
7
A
I
DM
I
AS
E
AS
40
10
3.2
mJ
Repetitive Avalanche Energy
2
Power Dissipation
L = 0.05mH
T
C
= 25 °C
T
C
= 100 °C
E
AR
P
D
1.6
2
0.8
1.23
W
Operating Junction & Storage Temperature Range
T
j
, T
stg
‐55 to 150
°C
100% UIS testing in condition of V
D
=15V, L=0.1mH, V
G
=10V, I
L
=8A, Rated V
DS
=30V N‐CH
100% UIS testing in condition of V
D
=15V, L=0.1mH, V
G
=‐10V, I
L
=‐7A, Rated V
DS
=‐30V P‐CH
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction‐to‐Case
Junction‐to‐Ambient
203/1/10
3
SYMBOL
R
JC
R
JA
TYPICAL
MAXIMUM
25
UNIT
°C / W
62.5
p.1
1
2
3
Pulse width limited by maximum junction temperature.
Duty cycle 1％
62.5°C / W when mounted on a 1 in
2
pad of 2 oz copper.
EMB17C03G
ELECTRICAL CHARACTERISTICS (T
C
= 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP
MAX
UNIT
STATIC
Drain‐Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0V, I
D
= 250A
V
GS
= 0V, I
D
= ‐250A
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250A
V
DS
= V
GS
, I
D
= ‐250A
Gate‐Body Leakage
I
GSS
V
DS
= 0V, V
GS
= ±20V
V
DS
= 0V, V
GS
= ±20V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 24V, V
GS
= 0V
V
DS
= ‐24V, V
GS
= 0V
V
DS
= 20V, V
GS
= 0V, T
J
= 125 °C
V
DS
= ‐20V, V
GS
= 0V, T
J
= 125 °C
On‐State Drain Current
1
I
D(ON)
V
DS
= 10V, V
GS
= 10V
V
DS
= ‐5V, V
GS
= ‐10V
Drain‐Source On‐State Resistance
1
R
DS(ON)
V
GS
= 10V, I
D
= 10A
V
GS
= ‐10V, I
D
= ‐8A
V
GS
= 4.5V, I
D
= 6A
V
GS
= ‐4.5V, I
D
= ‐6A
Forward Transconductance
1
g
fs
V
DS
= 5V, I
D
= 10A
V
DS
= ‐5V, I
D
= ‐8A
N‐CH 30
P‐CH
‐30
N‐CH
P‐CH
N‐CH
P‐CH
N‐CH
P‐CH
N‐CH
P‐CH
1
‐1
1.5
‐1.5
14.5
17.5
21
26
18
24
3
‐3
±100
±100
1
‐1
25
‐25
17
20
26
35
S
mΩ
A
A
nA
V
N‐CH 10
P‐CH
N‐CH
P‐CH
N‐CH
P‐CH
N‐CH
P‐CH
‐8
DYNAMIC
Input Capacitance
C
iss
N‐CH
V
GS
= 0V, V
DS
= 15V, f = 1MHz
Output Capacitance
C
oss
P=CH
V
GS
= 0V, V
DS
= ‐15V, f = 1MHz
N‐CH
P‐CH
N‐CH
P‐CH
Reverse Transfer Capacitance
C
rss
N‐CH
P‐CH
203/1/10
597
1407
111
208
96
164
pF
p.2
Gate Resistance
R
g
V
GS
= 15mV, V
DS
= 0V, f = 1MHz
N‐CH
P‐CH
Total Gate Charge
1,2
Q
g
(
V
GS
=10V
)
Q
g
(
V
GS
=‐10V
)
Q
g
(
V
GS
=4.5V
)
Q
g
(
V
GS
=‐4.5V
)
Gate‐Source Charge
1,2
Q
gs
N‐CH
V
DS
= 15V, V
GS
= 10V,
I
D
= 10A
P‐CH
V
DS
= ‐15V, V
GS
= ‐10V,
I
D
= ‐8A
N‐CH
P‐CH
N‐CH
P‐CH
N‐CH
P‐CH
Gate‐Drain Charge
1,2
Q
gd
N‐CH
P‐CH
Turn‐On Delay Time
1,2
t
d(on)
N‐CH
V
DS
= 15V,
Rise Time
1,2
EMB17C03G
2.0
4.0
14
20.3
7.8
9.8
1.8
3.2
4.7
4.9
11
10
16
8
36
25
20
10
nS
nC
Ω
N‐CH
P‐CH
N‐CH
P‐CH
N‐CH
P‐CH
N‐CH
P‐CH
t
r
I
D
= 1A, V
GS
= 10V, R
GS
= 6Ω
P‐CH
Turn‐Off Delay Time
1,2
t
d(off)
V
DS
= ‐15V,
I
D
= ‐1A, V
GS
= ‐10V, R
GS
= 6Ω
Fall Time
1,2
t
f
SOURCE‐DRAIN DIODE RATINGS AND CHARACTERISTICS (T
C
= 25 °C)
Continuous Current
I
S
N‐CH
P‐CH
Pulsed Current
3
I
SM
N‐CH
P‐CH
Forward Voltage
1
V
SD
I
F
= I
S
, V
GS
= 0V
N‐CH
P‐CH
Reverse Recovery Time
t
rr
N‐CH
P‐CH
Peak Reverse Recovery Current
I
RM(REC)
I
F
= I
S
, dl
F
/dt = 100A / S
N‐CH
P‐CH
Reverse Recovery Charge
Q
rr
N‐CH
P‐CH
1
2
50
32
30
‐28
20
26
2.3
‐2.3
9.2
‐9.2
1.2
‐1.2
A
V
nS
A
nC
Pulse test : Pulse Width 300 sec, Duty Cycle 2％.
Independent of operating temperature.
203/1/10
p.3
3
Pulse width limited by maximum junction temperature.
EMB17C03G
Ordering & Marking Information:
Device Name: EMB17C03G for SOP‐8
B17
C03
ABCDEFG
Outline Drawing
B17C03: Device Name
ABCDEFG: Date Code
ABCDEFG: Date Code
J
F
D
E
G
I
I
H
K
B
C
A
Dimension in mm
Dimension
Min.
Typ.
Max.
A
4.70
5.10
B
3.70
4.10
C
5.80
6.20
D
0.33
0.51
E
1.27
F
1.20
1.62
G
0.08
0.28
H
0.40
0.83
I
0.19
0.26
J
0.25
0.50
K
0∘
8∘
203/1/10
p.4
N‐Channel
On‐Region Characteristics
40
V = 10V 6V
7V
5V
32
4.5V
24
16
8
0
1
4
2
0
3
V ‐ Drain Source Voltage( V )
On‐Resistance Variation with Temperature
1.9
I = 10A
V = 10V
1.6
1.3
1.0
0.7
0.4
‐25
25
50
75 100
125
‐50
0
T ‐ Junction Temperature (°C)
Transfer Characteristics
30
V = 10V
25
25° C
T = ‐55° C
20
15
125° C
10
5
0
1.5
1
2.0
2.5
3.0
V ‐ Gate‐Source Voltage( V )
GS
EMB17C03G
2.4
2.2
R ‐Normalized
DS(ON)
Drain‐Source On‐Resistance
2.0
1.8
1.6
1.4
1.2
1.0
0.8
On‐Resistance Variation with Drain Current and Gate Voltage
I ‐ Drain Current( A )
D
V = 4.5 V
GS
5.0 V
6.0 V
7.0 V
10 V
5
0
8
DS
24
16
I ‐ Drain Current( A )
D
32
40
0.08
0.07
R ‐ On‐Resistance(
Ω
)
DS(ON)
0.06
0.05
0.04
0.03
0.02
0.01
150
On‐Resistance Variation with Gate‐Source Voltage
I = 5 A
D
D
GS
R ‐ Normalized
DS(on)
Drain‐Source On‐Resistance
T = 125°C
A
T = 25°C
A
0
2
4
8
6
V ‐ Gate‐Source Voltage( V )
GS
10
J
100
Body Diode Forward Voltage Variation
with Source Current and Temperature
V = 0V
GS
DS
Is ‐ Reverse Drain Current( A )
10
T = 125° C
A
I ‐ Drain Current(A)
D
A
1
25° C
0.1
‐55°
C
0.01
3.5
0.001
0
GS
0.2
0.6
0.8
1.0
0.4
V ‐ Body Diode Forward Voltage( V )
SD
1.2
1.4
203/1/10
p.5
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