Product Summary:
BV
DSS
R
DSON (MAX.)
I
D
‐60V
150mΩ
‐2.2A
EMBA5P06J
P‐Channel Logic Level Enhancement Mode Field Effect Transistor
D
G
S
Pb‐Free Lead Plating & Halogen Free
PARAMETERS/TEST CONDITIONS
Gate‐Source Voltage
Continuous Drain Current
T
A
= 25 °C
T
A
= 70 °C
Pulsed Drain Current
1
Power Dissipation
T
A
= 25 °C
T
A
= 70 °C
Operating Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction‐to‐Ambient
1
2
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C Unless Otherwise Noted)
SYMBOL
V
GS
I
D
LIMITS
±20
‐2.2
‐1.4
I
DM
P
D
‐8.8
1.25
0.8
T
j
, T
stg
‐55 to 150
°C
W
A
UNIT
V
SYMBOL
R
JA
TYPICAL
MAXIMUM
100
UNIT
°C / W
Pulse width limited by maximum junction temperature.
Duty cycle 1％
2015/4/24
p.1
PARAMETER
SYMBOL
EMBA5P06J
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C, Unless Otherwise Noted)
TEST CONDITIONS
LIMITS
MIN TYP
MAX
UNIT
STATIC
Drain‐Source Breakdown Voltage
Gate Threshold Voltage
Gate‐Body Leakage
Zero Gate Voltage Drain Current
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
V
GS
= 0V, I
D
= ‐250A
V
DS
= V
GS
, I
D
= ‐250A
V
DS
= 0V, V
GS
= ±20V
V
DS
= ‐48V, V
GS
= 0V
V
DS
= ‐40V, V
GS
= 0V, T
J
= 125 °C
On‐State Drain Current
1
Drain‐Source On‐State Resistance
1
I
D(ON)
R
DS(ON)
V
DS
= ‐5V, V
GS
= ‐10V
V
GS
= ‐10V, I
D
= ‐2A
V
GS
= ‐4.5V, I
D
= ‐1.5A
Forward Transconductance
1
g
fs
V
DS
= ‐5V, I
D
= ‐2A
‐60
‐1
‐2.2
‐1.7
125
160
3
‐3
±100
‐1
‐25
150
200
S
A
mΩ
nA
A
V
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
1,2
Gate‐Source Charge
1,2
Gate‐Drain Charge
Turn‐On Delay Time
1,2
Rise Time
1,2
Turn‐Off Delay Time
1,2
Fall Time
1,2
1,2
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
GS
= 0V, V
DS
= ‐30V, f = 1MHz
1032
66
48
12.3
1.6
2.4
12
20
20
25
nS
nC
pF
V
DS
= ‐10V, V
GS
= ‐10V,
I
D
= ‐2A
V
DS
= ‐10V,
I
D
= ‐1A, V
GS
= ‐10V, R
GS
= 6Ω
SOURCE‐DRAIN DIODE RATINGS AND CHARACTERISTICS (T
C
= 25 °C)
Continuous Current
Pulsed Current
Forward Voltage
1
1
2
3
3
I
S
I
SM
V
SD
I
F
= I
S
, V
GS
= 0V
‐2
‐8
1.2
A
V
Pulse test : Pulse Width 300 sec, Duty Cycle 2％.
Independent of operating temperature.
Pulse width limited by maximum junction temperature.
2015/4/24
p.2
TYPICAL CHARACTERISTICS
EMBA5P06J
8
Typical output characteristics
V = ‐10 V
GS
‐8.0V
2.4
2.2
‐7.0V
On‐Resistance Variation with
Drain Current and Gate Voltage
R ‐ Normalized
DS(ON)
Drain‐Source on‐Resistance
‐I ‐ Drain Current( A )
D
6
2.0
V = ‐4.5V
GS
1.8
1.6
1.4
1.2
1.0
‐5.0V
‐6.0V
‐7.0V
‐8.0V
‐10V
0
2
4
6
8
‐6.0V
4
‐5.0V
2
‐4.5V
0
0
1
4
2
3
‐V ‐ Drain‐Source Voltage( V )
DS
5
0.8
‐I Drain Current( A )
D
1.8
Normalized on‐Resistance v.s. Junction Temperature
I = ‐2A
D
V = ‐10V
GS
On‐Resistance Variation with Gate‐Source Voltage
0.40
I = ‐ 1.5A
D
1.6
0.35
R ‐ On‐Resistance(
Ω
)
DS(ON)
0.30
0.25
0.20
T = 125°C
A
R ‐ Normalized
DS(on)
Drain‐Source On‐Resistance
1.4
1.2
1.0
0.15
T = 25°C
A
0.8
0.10
0.05
‐25
0
25
50
75
100
125
150
0.6
‐50
T ‐ Junction Temperature (°C)
J
0
1
2
7
4
5
6
8
3
‐ V ‐ Gate‐Source Voltage( V )
GS
9
10
3.00
Gate Threshold Voltage v.s. Junction Temperature
10
V = 0V
GS
Body Diode Forward Voltage Variation
with Source Current and Temperature
‐V ‐Gate Threshold Voltage( V )
GS(th)
2.50
‐Is ‐ Reverse Drain Current( A )
1
2.00
0.1
1.50
0.01
T = 125°C
A
25°C
‐55°C
1.00
0.50
0.001
0
‐50
0
50
100
150
0.0001
0
0.2
0.4
0.6
0.8
1.0
1.2
T ‐ Junction Temperature (°C)
J
‐V ‐ Body Diode Forward Voltage( V )
SD
2015/4/24
p.3
‐ V ‐ Gate‐Source Voltage( V )
GS
Gate Charge Characteristics
10
I = ‐ 2A
D
EMBA5P06J
1200
Capacitance Characteristics
f = 1MHZ
V = 0V
GS
1000
8
Ciss
Capacitance( pF
)
V = ‐ 5V
DS
6
‐ 15V
4
‐ 10V
800
600
400
2
200
Coss
Crss
0
10
20
30
40
0
0
3
6
9
12
15
0
Q ‐ Gate Charge( nC )
g
100
Maximum Safe Operating Area
50
‐ V , Drain‐Source Voltage( V )
DS
50
60
Single Pulse Maximum Power Dissipation
Single Pulse
R = 100°C/W
θ
JA
T = 25°C
A
‐I ‐ Drain Current( A )
D
10
it
im
L
O
N
)
(
R
D
S
100
μ
s
1ms
10ms
100ms
1s
P( pk ),Peak Transient Power( W )
40
30
1
10s
20
0.1
V = ‐10V
GS
Single Pulse
R = 100°C/W
JA
T = 25°C
A
DC
10
0
0.001
0.01
0.1
1
10
‐V ‐ Drain‐Source Voltage( V )
DS
100
0.01
1
0.1
t ,Time ( sec )
1
10
100
1000
Transient Thermal Response Curve
1
Duty Cycle = 0.5
r( t ),Normalized Effective
Transient Thermal Resistance
0.1
0.2
0.1
0.05
Notes
:
0.02
P
DM
0.01
t1
t2
0.01
Single Pulse
1.Duty Cycle,D =
2.R =100°C/W
θ
JA
t1
t2
3.T ‐ T = P * R (t)
θ
JA
J
A
4.R (t)=r(t) * R
θ
JA
JA
θ
0.001
10
‐4
10
‐3
10
‐2
10
t ,Time (sec)
1
‐1
1
10
100
1000
2015/4/24
p.4
Ordering & Marking Information:
Device Name: EMBA5P06J for SOT‐23
EMBA5P06J
28: Device Code, 28 for EMBA5P06J
ABC: Date Code
Outline Drawing
Dimension in mm
Dimension
Min.
Typ.
Max.
A
0.7
1.12
A1
0
0.1
A2
b
b
L1
C
A1
E1
E
e
e1
D
A
C
0.1
0.2
D
2.8
2.9
3
E
2.6
2.8
3
E1
1.5
1.6
1.7
e
0.9
0.95
1
F
e1
1.9
F
0.8
1.2
G
G
0.3
0.6
L1
0.55
0.65
0.35
0.5
Footprint
2015/4/24
p.5
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
