N‐Channel Logic Level Enhancement Mode Field Effect Transistor
EMB09N03V
Product Summary:
BV
DSS
R
DSON (MAX.)
I
D
30V
9mΩ
20A
D
G
S
UIS, Rg 100% Tested
Pb‐Free Lead Plating & Halogen Free
PARAMETERS/TEST CONDITIONS
Gate‐Source Voltage
Continuous Drain Current
T
C
= 25 °C
T
C
= 100 °C
Pulsed Drain Current
1
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy
2
Power Dissipation
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 °C Unless Otherwise Noted)
SYMBOL
V
GS
I
D
LIMITS
±20
20
15
I
DM
I
AS
L = 0.1mH, ID=12A, RG=25Ω
UNIT
V
A
80
12
7.2
3.6
21
8.3
W
mJ
E
AS
E
AR
P
D
L = 0.05mH
T
C
= 25 °C
T
C
= 100 °C
Power Dissipation
T
A
= 25 °C
T
A
= 100 °C
P
D
2.5
1
W
Operating Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction‐to‐Case
Junction‐to‐Ambient
1
2
3
3
T
j
, T
stg
‐55 to 150
°C
SYMBOL
R
JC
R
JA
TYPICAL
MAXIMUM
6
UNIT
°C / W
50
Pulse width limited by maximum junction temperature.
Duty cycle 1％
50°C / W when mounted on a 1 in
2
pad of 2 oz copper.
2013/8/16
p.1
ELECTRICAL CHARACTERISTICS (T
C
= 25 °C, Unless Otherwise Noted)
EMB09N03V
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
LIMITS
MIN TYP
MAX
UNIT
Drain‐Source Breakdown Voltage
Gate Threshold Voltage
Gate‐Body Leakage
Zero Gate Voltage Drain Current
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
V
GS
= 0V, I
D
= 250A
V
DS
= V
GS
, I
D
= 250A
V
DS
= 0V, V
GS
= ±20V
V
DS
= 24V, V
GS
= 0V
V
DS
= 20V, V
GS
= 0V, T
J
= 125 °C
30
1
20
1.5
7.5
10
20
3
±100
1
25
9
13.5
V
nA
A
On‐State Drain Current
1
Drain‐Source On‐State Resistance
1
I
D(ON)
R
DS(ON)
V
DS
= 10V, V
GS
= 10V
V
GS
= 10V, I
D
= 12A
V
GS
= 4.5V, I
D
= 8A
A
mΩ
S
Forward Transconductance
1
g
fs
V
DS
= 5V, I
D
= 12A
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
1,2
C
iss
C
oss
C
rss
R
g
Q
g
(V
GS
=10V)
Q
g
(
V
GS
=4.5V
)
Gate‐Source Charge
Gate‐Drain Charge
1,2
Turn‐On Delay Time
1,2
Rise Time
1,2
Turn‐Off Delay Time
1,2
Fall Time
1,2
1,2
V
GS
= 0V, V
DS
= 15V, f = 1MHz
828
196
174
1.7
17.6
12
2.8
7.4
8
15
20
20
nS
nC
Ω
pF
V
GS
= 15mV, V
DS
= 0V, f = 1MHz
V
DS
= 15V, V
GS
= 10V,
I
D
= 12A
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
DS
= 15V,
I
D
= 1A, V
GS
= 10V, R
GS
= 6Ω
SOURCE‐DRAIN DIODE RATINGS AND CHARACTERISTICS (T
C
= 25 °C)
Continuous Current
Pulsed Current
Forward Voltage
1
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
2013/8/16
3
I
S
I
SM
V
SD
t
rr
I
RM(REC)
Q
rr
I
F
= I
S
, V
GS
= 0V
I
F
= I
S
, dl
F
/dt = 100A / S
22
50
12
3.5
14
1.2
A
V
nS
A
nC
p.2
1
2
3
Pulse test : Pulse Width 300 sec, Duty Cycle 2％.
Independent of operating temperature.
Pulse width limited by maximum junction temperature.
EMB09N03V
Ordering & Marking Information:
Device Name: EMB09N03V for EDFN 3 x 3
B09
N03
ABCDEFG
Outline Drawing
B09N03: Device Name
ABCDEFG: Date Code
b
A1
Θ1
0.10
e
A
D
D1
L1
E1
E
c
Dimension in mm
Dimension
Min.
Typ.
Max.
A
0.70
0.80
0.90
A1
0
0.05
b
0.24
0.30
0.37
c
0.10
0.152
0.25
D
2.95
3.00
3.15
L
D1
2.25
2.35
2.45
E3
E2
E
3.15
3.20
3.40
E1
2.95
3.00
3.15
E2
1.65
1.75
1.96
E3
0.575
e
0.65
L
0.30
0.40
0.50
L1
0.13
Ѳ1
0∘
10∘
12∘
Recommended minimum pads
2.6
3.75
2.05
0.4
0.6
0.5
0.65
2013/8/16
0.6
p.3
R ,Normalized
DS(ON)
Drain‐Source On‐Resistance
1.8
I = 12A
D
GS
V = 10V
1.6
EMB09N03V
100
On‐Region Characteristics
10V
7V
6V
5V
R ,Normalized
DS(ON)
Drain‐Source On‐Resistance
On‐Resistance Variation with Drain Current and Gate Voltage
3
80
I ,Drain‐Source Current( A )
D
V = 4.5V
GS
2.5
60
2
V = 4.5V
GS
5V
5.5V
40
1.5
6V
7V
10V
20
1
0
0.5
0
0.5
1
1.5
2.5
3
3.5
2
V ,Drain‐Source Voltage( V )
DS
4
4.5
5
0
20
40
60
80
100
I ,Drain Current( A )
D
On‐Resistance Variation with Temperature
0.030
On‐Resistance Variation with Gate‐Source Voltage
I = 6A
D
1.4
R ,On‐Resistance( ohm )
DS(ON)
0.025
0.020
1.2
0.015
1.0
0.8
0.6
‐50
0.010
°
T = 125 C
A
°
T = 25 C
A
‐25
0
25
50
75
100
125
150
0
2
4
6
8
T ,Junction Temperature(°C )
j
10
V ,Gate‐Source Voltage( V )
GS
Transfer Characteristics
25
V = 10V
DS
20
T = ‐55 °C
A
25 °C
60
V = 0V
GS
10
Body Diode Forward Voltage Variation
with Source Current and Temperature
T = 125°C
A
I ,Reverse Drain Current( A )
I ,Drain Current( A )
D
125 °C
15
1
25°C
0.1
10
‐55°C
0.01
5
S
0.001
0
0
V ,Gate‐Source Voltage( V )
GS
1
2
3
4
5
0.0001
0
0.2
SD
V ,Body Diode Forward Voltage( V )
0.4
0.6
0.8
1.0
1.2
1.4
2013/8/16
p.4
V
GS
,Gate-Source Voltage( V )
10
12
G a te C h a r g e C h a r a c te r is tic s
I
D
= 1 2 A
10
4
EMB09N03V
C a p a c it a n c e
C h a r a c t e r is t ic s
C‐Capacitance( pF )
8
V
DS
10
3
C is s
=5V
15V
10V
6
C o ss
C rss
10
2
4
2
f
=
1
M H z
V
G S
= 0
V
0
7 .5
15
Q
g
,G a te C h a rg e ( n C )
2 2 .5
0
5
10
15
20
25
30
0
V
DS
‐
D r a in
‐
S o u r c e
V o lt a g e (
V
)
100
Maximum Safe Operating Area
it
Lim
)
D
S
(O
N
R
100
μ
s
I ‐ Drain Current( A )
D
10
50
Single Pulse Maximum Power Dissipation
Single Pulse
R = 50°C/W
θ
JA
T = 25°C
A
10ms
100ms
P( pk ),Peak Transient Power( W )
100
1ms
40
30
1
1s
10s
20
0.1
V = 10V
GS
Single Pulse
R = 50°C/W
JA
T = 25°C
A
DC
10
0.01
0.1
1
10
V ‐ Drain‐Source Voltage( V )
DS
0
0.001
0.01
1
0.1
t ,Time ( sec )
1
10
100
1000
1
Duty Cycle = 0.5
0.2
Transient Thermal Response Curve
r( t ),Normalized Effective
Transient Thermal Resistance
0.1
0.1
0.05
Notes
:
0.02
P
DM
0.01
t1
t2
0.01
Single Pulse
1.Duty Cycle,D =
2.R =50°C/W
θ
JA
t1
t2
3.T ‐ T = P * R (t)
θ
JA
J
A
4.R (t)=r(t) + R
θ
JA
JA
θ
0.001
10
‐4
10
‐3
10
‐2
10
t ,Time (sec)
1
‐1
1
10
100
1000
2013/8/16
p.5
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