江
苏东晨电子科技有限公司
JiangSu Dongchen Electronics Technology Co.,Ltd
BTA08
双向可控硅
TRIAC
版本号
201603-A
产品概述
GENERAL DESCRIPTION
BTA08
双向可控硅采用穿通隔离台面结构，
复合玻璃钝化PN结表面保护工艺技术，
dv/dt高，
可靠性高，
适用于控温、调光、马达控制。
BTA08 Triacs is fabricated using separation diffusion processes ,the junction termination areas are passivated
with glass. Thanks to highly dv/dt and reliability,the Triacs series is suitable for domestic lighting ,heating and
motor speed controllers.
主要参数
MAIN CHARACTERISTICS
参数
Parameter
I
T(RMS)
V
DRM
/V
RRM
I
GT(III)
V
ISO
数值
Value
8
600
≤50
2000
单½
Unit
A
V
mA
V
产品特性
dv/dt高
通态压降½
Rohs环保产品
FEATURES
Highly dv/dt
Low on-state voltage
Rohs Products
TO-220F
应用领域
APPLICATIONS
主要应用于调光、控温、马达控制。
domestic lighting ,heating and motor speed controllers.
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江
苏东晨电子科技有限公司
JiangSu Dongchen Electronics Technology Co.,Ltd
极限值
(除非另有规定，Tj=25℃)
ABSOLUTE RATINGS
(Tj=25℃,unless otherwise specified)
符号
Symbol
I
T(RMS)
RMS
通态电流
I
TSM
I
2
t
di/dt
I
GM
P
G(AV)
Tstg
Tj
参数
Parameter
T
C
=110℃
F=50H
Z ,
t=20ms
T
P
=10ms
F=120H
Z
,Tj=125℃
TP=20µs,Tj=125℃
Tj=125℃
数值
Value
8
80
36
50
4
1
-40-+150
-40-+150
单½
Unit
A
A
A
2
s
A/µs
A
W
℃
℃
RMS on-state current (full sine wave)
通态峰值浪涌电流
Non repetitive surge peak on-state current
I
2
t
耗散值
I
2
t value for fusing
通态电流上升值
Critical rate of rise of on-state current
门极峰值电流
Peak gate current
平均门极耗散功率
Average gate power
dissipation
贮存结温范围
Storage junction temperature range
工½结温范围
Operating junction temperature range
电参数
(除非另有规定，Tj=25℃)
ELECTRICAL CHARACTERISTICS
(Tj=25℃,unless otherwise specified)
参数
Parameter
触发电流
Gate trigger current
触发电压
Gate trigger voltage
维持电流
Holding current
擎½电流
Latching current
电压上升率
Rise of off- state voltage
通态压降
Peak on-state voltage
断态漏电流
Peak repetitive forward blocking current
符号
Symbol
I
GT
V
GT
Ⅰ½
Ⅲ
Ⅰ½
Ⅲ
I
H
I
L
dv/dt
V
TM
I
DRM
I
RRM
规范值
Value
Min.
10
Typ.
-
≤1.5
-
-
1000
-
-
-
≤1.55
≤5
≤3.1
50
80
-
Max.
35
单½
Unit
mA
V
mA
mA
V/μS
V
μA
mA
测试条件
Test Conditions
V
D
=12V,I
T
=0.1A
V
D
=12V, I
T
=0.1A
V
D
=12V,I
T
=0.1A
V
D
=12V,I
T
=0.1A
V
D
=67%V
DRM
I
T
=11A
V
RRM
=V
DRM,
T
j
= 25°
C
V
RRM
=V
DRM,
T
j
=150°
C
热特性
THERMAL RESISTANCES
符号
Symbol
Rth(j-c)
Rth(j-a)
86-510-87136806
参数
Parameter
Junction to case(AC)
Junction to ambient
2 /4
数值
Value
1.7
60
单½
Unit
K/W
K/W
http://www.jsdgme.com
江
苏东晨电子科技有限公司
JiangSu Dongchen Electronics Technology Co.,Ltd
特征曲线
ELECTRICAL CHARACTERISTICS (CURVES)
图2
RMS通态电流与Tc温度关系
Fig.2. RMS On-state Current Versus TL
图1 最大耗散功率与RMS通态电流关系
Fig.1.Maximum Power Dissipation Versus
on-state current
图3 通态特性
Fig.3.On-State Characteristics
图4 通态浪涌峰值电流与周期数关系
Fig.4.Surge Peak On-state Current Versus Number Cycles
图5
I
GT
、I
H
、I
L
相对值（相对于25℃）与结温关系
Fig.5.Relative Variation Of Gate Trigger Current
, Holding Current And Latching Current Versus Junction Temperature (Typical Value)
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江
苏东晨电子科技有限公司
JiangSu Dongchen Electronics Technology Co.,Ltd
封装尺寸
PACKAGE MECHANICAL DATA
Information furnished is believed to be accurate and reliable. However, Jiangsu Dongchen Electronics
Technology CO.,LTD assumes no responsibility for the consequences of use of such information nor for
any
infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of Jiangsu Dongchen Electronics
Technology CO.,LTD. Specifications mentioned in this publication are subject to change without notice.
This publication supersedes and replaces all information previously supplied. Jiangsu Dongchen
Electronics Technology CO.,LTD products are not authorized for use as critical components in life
support devices or systems without express written approval of Jiangsu Dongchen Electronics
Technology CO.,LTD.
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