PXXXXSX SERIES
Thyristor Surge Suppressors (TSS) Data Sheet
Description
DO-214AA Thyristor
solid state protection thyristor protect
telecommunications equipment such as modems, line cards,
fax machines, and other CPE.
P Series devices are used to enable equipment to meet
various regulatory requirements including GR 1089, ITU
K.20, K.21 and K.45, IEC 60950, UL 60950, and TIA-968
(formerly known as FCC Part 68).
Features
Compared to surge suppression using other technologies, P Series devices offer absolute surge protection
regardless of the surge current available and the rate of applied voltage (dv/dt). P Series devices:
■
Cannot be damaged by voltage
■
Eliminate hysteresis and heat dissipation typically found with clamping devices
■
Eliminate voltage overshoot caused by fast-rising transients
■
Are non-degenerative
■
Will not fatigue
■
Have low capacitance, making them ideal for high-speed transmission equipment
■
Meets MSL level 1, per J-STD-020
■
Safety certification: UL: E244458
Electrical Parameters
Parameter
V
DRM
V
S
V
T
I
DRM
I
S
I
T
I
H
C
O
V
PP
I
PP
Definition
Peak Off-state Voltage –
maximum voltage that can be applied while maintaining off state
Switching Voltage –
maximum voltage prior to switching to on state
On-state Voltage –
maximum voltage measured at rated on-state current
Leakage Current –
maximum peak off-state current measured at V
DRM
Switching Current –
maximum current required to switch to on state
On-state Current –
maximum rated continuous on-state current
Holding Current –
minimum current required to maintain on state
Off-state Capacitance –
typical capacitance measured in off state
Peak Pulse Voltage –
maximum rated peak impulse voltage
Peak Pulse Current –
maximum rated peak impulse current
Revision：12-Aug-17
www.brightking.com
PXXXXSX SERIES
Electrical Characteristics
Part
Number
P2600SA
P2600SB
P2600SC
P3100SA
P3100SB
P3100SC
P3500SA
P3500SB
P3500SC
Notes:
·All
measurements are made at an ambient temperature of 25℃. I
PP
applies to -40℃ through +85℃ temperature range.
·Off-state
capacitance(C
O
) is measured at 1 MHz with a 2V bias and is typical value.
V
DRM
(V)
220
220
220
275
275
275
320
320
320
V
S
(V)
300
300
300
350
350
350
400
400
400
V
T
(V)
4
4
4
4
4
4
4
4
4
I
DRM
(μA)
5
5
5
5
5
5
5
5
5
I
S
(mA)
800
800
800
800
800
800
800
800
800
I
T
(A)
2.2
2.2
2.2
2.2
2.2
2.2
2.2
2.2
2.2
I
H
(mA)
150
150
150
150
150
150
150
150
150
C
O
(pF)
35
50
80
30
45
65
30
40
65
V
PP
10/700μs
(V)
2000
4000
6000
2000
4000
6000
2000
4000
6000
I
PP
10/1000μs
(A)
45
80
100
45
80
100
45
80
100
Marking
P26A
P26B
P26C
P31A
P31B
P31C
P35A
P35B
P35C
Thermal Considerations
Package DO-214AA/SMB
Symbol
T
J
T
S
R
θJA
Parameter
Operating Junction Temperature
Storage Temperature Range
Junction to Ambient on printed circuit
Value
-40 to +150
-40 to +150
90
Unit
℃
℃
℃/W
Part Number Code and Marking
P
X
X
X
X
S
X
Voltage
Series Code
Package
Surge Current
Logo
YXXX
P008A
Date Code
Device Marking Code
Revision：12-Aug-17
www.brightking.com
PXXXXSX SERIES
Characteristics Curves
Figure 1. V-I Characteristics
+I
I
T
I
S
I
H
I
PP
- Peak Pulse Current, %I
PP
Figure 2. tr × td Pulse Wave-form
t
r
= rise time to peak value
t
d
= decay time to half value
100
Peak Value
Waveform = t
r
× t
d
-V
I
DRM
V
T
V
DRM
V
S
+V
50
Half Value
0
-I
0
t
r
t
d
t-Time (µs)
Figure 3. Normalized Vs Change versus Junction
Temperature
16
14
12
10
6
4
2
0
-4
-6
-8
-40 -20
0
20
40
60
80 100 120 140 160
T
J
-Junction Temperature (℃)
25℃
Figure 4. Normalized DC Holding Current versus
Case Temperature
2.0
1.8
1.6
I
H
/
I
H
(T
C
=25℃)
Percent of V
S
, Change - %
8
Ratio of
1.4
1.2
25℃
1.0
0.8
0.6
0.4
-40 -20
0
20
40
60
80 100 120 140 160
T
C
-Case Temperature (℃)
Revision：12-Aug-17
www.brightking.com
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