UDD32CXXL01 SERIES
Electrostatic Discharged Protection Devices (ESD) Data Sheet
Description
The series are an ultra low capacitance TVS array designed to protect
high speed data interfaces. This series has been specifically designed
to protect sensitive components which are connected to data an trans-
-mission lines from overvoltage caused by electrostatic discharge (ESD),
cable discharge events (CDE) and lightning.
The unique design incorporates surge rated, low capacitance steering
diodes and a TVS diode in a single package. During transient conditions,
the steering diodes direct the transient current to ground. The internal
TVS diode clamps the transient voltage to a safe level. The ultra low
capacitance array configuration allows the user to protect up to the high
speed data lines. These devices are in a signal package, RoHS/WEEE
compliant, SOD-323 package. It measures 2.5×1.25×1.0mm.
The series devices may be used to meet the immunity requirements of
IEC61000-4-2 (ESD), IEC61000-4-4 (EFT) and IEC61000-4-5 (Surge).
Features
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IEC61000-4-2 ESD 15KV Air, 8KV contact compliance
SOD-323 surface mount package
Protects one I/O line
Working voltage: 3.3V, 5V, 12V and 15V
Low leakage current
Low operating and clamping voltages
Solid-state silicon avalanche technology
Lead Free/RoHS compliant
Solder reflow temperature: Pure Tin-Sn, 260~270℃
Flammability rating UL 94V-0
Meets MSL level 1, per J-STD-020
Pin Configuration
Applications
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USB 2.0 and USB 3.0 interface
10/100/1000 Ethernet
Personal digital assistants (PDA)
Serial ATA protection
Digital visual interface (DVI)
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Wireless system devices
Handhelds and notebooks
Digital cameras
RF interface
Revision：12-Jun-17
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UDD32CXXL01 SERIES
Maximum Ratings
Rating
ESD voltage (Contact discharge)
V
ESD
ESD voltage (Air discharge)
Lead soldering temperature
Storage & operating temperature range
T
L
T
STG
,T
J
±15
260
-55~+150
℃
℃
Symbol
Value
±8
kV
Unit
Electrical Characteristics (T
J
=25℃)
UDD32C03L01 (Marking: AC)
Parameter
Reverse stand-off voltage
Reverse breakdown voltage
Reverse leakage current
Clamping voltage (tp=8/20μs)
Clamping voltage (tp=8/20μs)
Peak Pulse Current (tp=8/20μs)
Off state junction capacitance
UDD32C05L01 (Marking: BC)
Parameter
Reverse stand-off voltage
Reverse breakdown voltage
Reverse leakage current
Clamping voltage (tp=8/20μs)
Clamping voltage (tp=8/20μs)
Peak Pulse Current (tp=8/20μs)
Off state junction capacitance
Symbol
V
RWM
V
BR
I
R
V
C
V
C
I
PP
C
J
0Vdc,f=1MHz
0.8
I
BR
=1mA
V
R
=5V
I
PP
=1A
I
PP
=5A
6
5
9.8
18.3
17
Condition
Min.
Typ.
Max.
5
Unit
V
V
μA
V
V
A
pF
Symbol
V
RWM
V
BR
I
R
V
C
V
C
I
PP
C
J
0Vdc,f=1MHz
0.8
I
BR
=1mA
V
R
=3.3V
I
PP
=1A
I
PP
=5A
4
5
7
15
19
Condition
Min.
Typ.
Max.
3.3
Unit
V
V
μA
V
V
A
pF
Revision：12-Jun-17
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UDD32CXXL01 SERIES
Electrical Characteristics (T
J
=25℃)
UDD32C08L01
Parameter
Reverse stand-off voltage
Reverse breakdown voltage
Reverse leakage current
Clamping voltage (tp=8/20μs)
Clamping voltage (tp=8/20μs)
Peak Pulse Current (tp=8/20μs)
Off state junction capacitance
Symbol
V
RWM
V
BR
I
R
V
C
V
C
I
PP
C
J
0Vdc,f=1MHz
1
I
BR
=1mA
V
R
=8V
I
PP
=1A
I
PP
=10A
8.5
1
13
24
10
Condition
Min.
Typ.
Max.
8
Unit
V
V
μA
V
V
A
pF
UDD32C12L01 (Marking: DC)
Parameter
Reverse stand-off voltage
Reverse breakdown voltage
Reverse leakage current
Clamping voltage (tp=8/20μs)
Clamping voltage (tp=8/20μs)
Peak Pulse Current (tp=8/20μs)
Off state junction capacitance
Symbol
V
RWM
V
BR
I
R
V
C
V
C
I
PP
C
J
0Vdc,f=1MHz
0.8
I
BR
=1mA
V
R
=12V
I
PP
=1A
I
PP
=5A
13.3
1
19
28.6
7
Condition
Min.
Typ.
Max.
12
Unit
V
V
μA
V
V
A
pF
UDD32C15L01 (Marking: EC)
Parameter
Reverse stand-off voltage
Reverse breakdown voltage
Reverse leakage current
Clamping voltage (tp=8/20μs)
Clamping voltage (tp=8/20μs)
Off state junction capacitance
Revision：12-Jun-17
Symbol
V
RWM
V
BR
I
R
V
C
V
C
C
J
I
BR
=1mA
V
R
=15V
I
PP
=1A
I
PP
=5A
0Vdc,f=1MHz
0.8
16.7
1
24
35
Condition
Min.
Typ.
Max.
15
Unit
V
V
μA
V
V
pF
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UDD32CXXL01 SERIES
Typical Characteristics Curves
Figure 1. Power Derating Curve
Figure 2. Pulse Waveform
110
100
90
80
70
60
50
40
30
20
10
0
0
5
10
15
20
25
30
t
d
=t|
PP
/2
t
r
Peak value Ipp
Waveform
Parameters:
t
r
=8µs
t
d
=20µs
t-Time (μs)
Figure 3. Non-Repetitive Peak Pulse vs Pulse Time
10000
Figure 4. ESD Clamping (8kV Contact IEC61000-4-2)
P
PP
-Peak Pusle Power (W)
1000
100
10
0.1
1
10
100
1000
10000
tp-Pulse Duration (μs)
Revision：12-Jun-17
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UDD32CXXL01 SERIES
Recommended Soldering Conditions
Reflow Soldering
Recommended Condition
Profile Feature
Average ramp-up rate (T
L
to T
P
)
Preheat
-Temperature Min (T
S min
)
-Temperature Max (T
S max
)
-Time (min to max) (ts)
T
S max
to T
L
-Ramp-up Rate
Time maintained above:
-Temperature (T
L
)
-Time (t
L
)
Peak Temperature (T
P
)
Time within 5℃ of actual Peak Temperature (t
P
)
Ramp-down Rate
Time 25℃ to Peak Temperature
Pb-Free Assembly
3℃/second max.
150℃
200℃
60-180 seconds
3℃/second max.
217℃
60-150 seconds
260℃
20-40 seconds
6℃/second max.
8 minutes max.
Revision：12-Jun-17
www.brightking.com
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