SDT23CXXL02 SERIES
Electrostatic Discharged Protection Devices (ESD) Data Sheet
Description
Brightking’s SDT23CXXL02 series are designed to protect sensitive
electronics from damage or latch-up due to ESD and other voltage
induced transient events. They are designed for use in applications
where board space is at a premium. The devices will protect up to two
lines. They are bidirectional devices and may be used on lines where
the signal polarities are above ground. TVS diodes are solid state device
designed specifically for transient suppression.
They feature large cross-sectional area junctions for conduction high
transient currents. They offer desirable characteristics for board level
protection including fast response time, low and clamping voltage, and
no device degradation. The devices may be used to meet the immunity
requirements of IEC61000-4-2, level 4. The size SOT-23 package makes
them ideal for use in portable electronics such as RS-422 I/Os, RS-232
I/Os, notebook computers, and servers.
Features
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IEC61000-4-2 ESD 15KV Air, 8KV contact compliance
SOT-23 surface mount package
Protects bidirectional two I/O lines
Peak power dissipation of 350W under 8/20μs waveform
Working voltage: 5V, 12V & 15V
Low leakage current
Low operating and clamping voltages
Solid-state silicon avalanche technology
Lead Free/RoHS compliant
Solder reflow temperature: Pure Tin-Sn, 260~270℃
Flammability rating UL 94V-0
Meets MSL level 1, per J-STD-020
Pin Configuration
Applications
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RS-232 and RS-422 data lines
Microprocessor based equipment
LAN/WAN equipment
Desktops PC and serves
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Notebook, Laptop and Palmtop computers
Set Top Box
Peripherals
Serial and Parallel ports
Revision：10-Jun-15
www.brightking.com
SDT23CXXL02 SERIES
Maximum Ratings
Rating
Peak pulse power (tp=8/20μs waveform)
ESD voltage (Contact discharge)
V
ESD
ESD voltage (Air discharge)
Storage & operating temperature range
T
STG
,T
J
±15
-55~+150
℃
Symbol
P
PP
Value
350
±8
kV
Unit
W
Electrical Characteristics (T
J
=25℃)
SDT23C05L02 (Marking: C05)
Parameter
Reverse stand-off voltage
Reverse breakdown voltage
Reverse leakage current
Clamping voltage (tp=8/20μs)
Clamping voltage (tp=8/20μs)
Symbol
V
RWM
V
BR
I
R
V
C
V
C
I
BR
=1mA
V
R
=5V
Each I/O pin
I
PP
=1A
I
PP
=10A
0Vdc,f=1MHz
Between I/O
pins and GND
6
5
9.8
18
Condition
Min.
Typ.
Max.
5
Unit
V
V
μA
V
V
Off state junction capacitance
C
J
150
pF
Revision：10-Jun-15
www.brightking.com
SDT23CXXL02 SERIES
Electrical Characteristics (T
J
=25℃)
SDT23C12L02 (Marking: C12)
Parameter
Reverse stand-off voltage
Reverse breakdown voltage
Reverse leakage current
Clamping voltage (tp=8/20μs)
Clamping voltage (tp=8/20μs)
Symbol
V
RWM
V
BR
I
R
V
C
V
C
I
BR
=1mA
V
R
=12V
Each I/O pin
I
PP
=1A
I
PP
=5A
0Vdc,f=1MHz
Between I/O
pins and GND
13.3
1
19
32
Condition
Min.
Typ.
Max.
12
Unit
V
V
μA
V
V
Off state junction capacitance
C
J
65
pF
SDT23C15L02 (Marking: C15)
Parameter
Reverse stand-off voltage
Reverse breakdown voltage
Reverse leakage current
Clamping voltage (tp=8/20μs)
Clamping voltage (tp=8/20μs)
Symbol
V
RWM
V
BR
I
R
V
C
V
C
I
BR
=1mA
V
R
=15V
each I/O pin
I
PP
=1A
I
PP
=5A
0Vdc,f=1MHz
Between I/O
pins and GND
16.7
1
24
38
Condition
Min.
Typ.
Max.
15
Unit
V
V
μA
V
V
Off state junction capacitance
C
J
60
pF
Revision：10-Jun-15
www.brightking.com
SDT23CXXL02 SERIES
Typical Characteristics Curves
Figure 1. Power Derating Curve
Figure 2. Pulse Waveforms
110
100
90
80
70
60
50
40
30
20
10
0
0
5
10
15
20
25
30
t
d
=t|I
PP
/2
t
r
Peak value Ipp
Peak Power Dissipation (%)
Waveform
Parameters:
t
r
=8µs
t
d
=20µs
t-Time (μs)
Figure 3. Non-Repetitive Peak Pulse vs. Pulse Time
Figure 4. Normalized Capacitance vs. Reverse Voltage
Figure 5. ESD Clamping(8kV Contact IEC61000-4-2)
Figure 6. ESD Clamping(-8kV Contact IEC61000-4-2)
Revision：10-Jun-15
Junction Capacitance (pF)
www.brightking.com
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