Pb Free Product
BLM3400
N-Channel
Enhancement Mode Power MOSFET
DESCRIPTION
The BLM3400 uses advanced trench technology to provide
excellent R
DS(ON)
, low gate charge and operation with gate
voltages as low as 2.5V. This device is suitable for use as a
Battery protection or in other Switching application.
D
G
GENERAL FEATURES
●
V
DS
= 30V,I
D
= 5.8A
R
DS(ON)
< 59m
R
DS(ON)
< 45m
R
DS(ON)
< 41m
@ V
GS
=2.5V
@ V
GS
=4.5V
@ V
GS
=10V
S
Schematic diagram
●
High Power and current handing capability
●
Lead free product is acquired
●
Surface Mount Package
Marking and pin Assignment
Application
●PWM
applications
●Load
switch
●Power
management
SOT-23 top view
Package Marking And Ordering Information
Device Marking
3400
Device
BLM3400
Device Package
SOT-23
Reel Size
Ø180mm
Tape width
8 mm
Quantity
3000 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
℃
Parameter
Symbol
Drain-Source Voltage
V
DS
Gate-Source Voltage
V
GS
Drain Current-Continuous
I
D
Drain Current-Pulsed (Note 1)
I
DM
Maximum Power Dissipation
P
D
Operating Junction and Storage Temperature Range
T
J
,T
STG
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
R
θJA
Limit
30
±12
5.8
30
1.4
-55 To 150
Unit
V
V
A
A
W
℃
89
℃
/W
Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
BV
DSS
V
GS
=0V I
D
=250µA
Min
30
Typ
33
Max
-
Unit
V
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BLM3400
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics (Note 3)
Gate Threshold Voltage
V
GS(th)
V
DS
=V
GS
,I
D
=250µA
V
GS
=2.5V, I
D
=4A
Drain-Source On-State Resistance
R
DS(ON)
V
GS
=4.5V, I
D
=2.9A
V
GS
=10V, I
D
=2.9A
Forward Transconductance
Dynamic Characteristics (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
V
SD
I
S
V
GS
=0V,I
S
=2.9A
-
-
0.75
-
1.2
2.9
V
A
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
V
DS
=15V,I
D
=5.8A,
V
GS
=4.5V
V
DD
=15V,I
D
=2.9A
V
GS
=10V,R
GEN
=3
-
-
-
-
-
-
-
3.3
4.8
26
4
9.5
1.5
3
-
-
-
-
-
-
-
nS
nS
nS
nS
nC
nC
nC
C
lss
C
oss
C
rss
V
DS
=15V,V
GS
=0V,
F=1.0MHz
-
-
-
623
99
77
-
-
-
PF
PF
PF
g
FS
V
DS
=5V,I
D
=2.9A
0.7
-
-
-
10
0.9
1.4
V
m
m
m
S
I
DSS
I
GSS
V
DS
=30V,V
GS
=0V
V
GS
=±12V,V
DS
=0V
-
-
-
-
1
±100
µA
nA
45
34
31
-
59
45
41
-
Notes:
1.
Repetitive Rating: Pulse width limited by maximum junction temperature.
2.
Surface Mounted on FR4 Board, t
≤
10 sec.
3.
Pulse Test: Pulse Width
≤
300µs, Duty Cycle
≤
2%.
4.
Guaranteed by design, not subject to production
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Pb Free Product
BLM3400
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
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Pb Free Product
BLM3400
SOT-23 PACKAGE INFORMATION
Symbol
A
A1
A2
b
c
D
E
E1
e
e1
L
L1
θ
NOTES
1. All dimensions are in millimeters.
2. Tolerance ±0.10mm (4 mil) unless otherwise specified
Dimensions in Millimeters
MIN.
MAX.
0.900
1.150
0.000
0.100
0.900
1.050
0.300
0.500
0.080
0.150
2.800
3.000
1.200
1.400
2.250
2.550
0.950TYP
1.800
2.000
0.550REF
0.300
0.500
0°
8°
3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils.
4. Dimension L is measured in gauge plane.
5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.
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