AMS4004
N-CH40V Fast Switching MOSFETs
GENERAL DESCRIPTION
The AMS4004 is the high cell density trenched N-ch MOSFETs, which provide
excellent RDSON and gate charge for most of the synchronous buck converter
applications.
The AMS4004 meet the RoHS and Green Product requirement, 100% EAS
guaranteed with full function reliability approved.
FEATURES
-
-
-
-
-
Advanced high cell density Trench technology
Super Low Gate Charge
Excellent CdV/dt effect decline
100% EAS Guaranteed
Green Device Available
Product Summery
BVDSS
40V
RDSON
12mΩ
ID
8.5A
SOP8 Pin configuration
1/5
Axelite Confidential Materials, do not copy or distribute without written consent.
Rev.1.0 Nov.08, 2013
AMS4004
ABSOLUTE MAXIMUM RATINGS
Characteristics
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 10V (Note 1)
Continuous Drain Current, V
GS
@ 10V (Note 1)
Pulsed Drain Current (Note 2)
Single Pulse Avalanche Energy (Note 3)
Avalanche Current
Total Power Dissipation (Note 4)
Storage Temperature Range
Operating Junction Temperature Range
Thermal Resistance Junction-ambient
(Steady State) (Note 1)
Thermal Resistance Junction-Case (Note 1)
Symbol
Rating Units
V
DS
40
V
V
GS
±20
V
I
D
@T
A
=25°C
8.5
A
I
D
@T
A
=70°C
6.8
A
I
DM
34
A
EAS
69
mJ
I
AS
25
A
P
D
@T
A
=25°C
1.5
W
T
STG
-55 to 150 °C
T
J
-55 to 150 °C
R
θJA
R
θJC
85
36
°C/W
°C/W
Note 1: The data tested by surface mounted on a 1 inch
2
FR-4 board with 2OZ copper.
Note 2: The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
Note 3: The EAS data shows Max. rating. The test condition is V
DD
=25V, V
GS
=10V, L=0.1mH, I
AS
=25A
Note 4: The power dissipation is limited by 150°C junction temperature
Note 5: The Min. value is 100% EAS tested guarantee.
Note 6: The data is theoretically the same as I
D
and I
DM
, in real applications, should be limited by total power
dissipation.
2/5
Axelite Confidential Materials, do not copy or distribute without written consent.
Rev.1.0 Nov.08, 2013
AMS4004
ELECTRICAL CHARACTERISTICS
(T
J
=25 °C, unless otherwise noted)
Characteristics
Symbol
Drain-Source Breakdown Voltage BV
DSS
Conditions
Min. Typ. Max. Unit
V
GS
=0V , I
D
=250uA
40 -
-
V
BVDSS Temperature Coefficient
△BV
DSS
/△T
J
Reference to 25°C,
- 0.034 - V/°C
I
D
=1mA
V
GS
=10V , I
D
=8A
- 10 12
Static Drain-Source
R
DS(ON)
m
On-Resistance (Note 2)
V
GS
=4.5V , I
D
=6A
- 14 17
Gate Threshold Voltage
V
GS(th)
1.0 1.5 2.5
V
V
GS
=V
DS
, I
D
=250uA
V
GS(th)
Temperature Coefficient
△V
GS(th)
- -5.64 - mV/°C
V
DS
=32V , V
GS
=0V , T
J
=25°C -
-
1
Drain-Source Leakage Current
I
DSS
uA
V
DS
=32V , V
GS
=0V , T
J
=55°C -
-
5
Gate-Source Leakage Current
I
GSS
V
GS
=±20V , V
DS
=0V
-
- ±100 nA
Forward Transconductance
gfs
V
DS
=5V , I
D
=8A
- 36
-
S
Gate Resistance
R
g
V
DS
=0V , V
GS
=0V , f=1MHz
- 2.1 4.2
Total Gate Charge (4.5V)
Q
g
- 10.7 -
V
DS
=20V , V
GS
=4.5V,
Gate-Source Charge
Q
gs
- 3.3
-
nC
I
D
=8A
Gate-Drain Charge
Q
gd
- 4.2
-
Turn-On Delay Time
T
d(on)
- 8.6
-
Rise Time
T
r
- 3.4
-
V
DD
=12V , V
GS
=10V,
ns
R
G
=3.3 I
D
=6A
Turn-Off Delay Time
T
d(off)
- 24.8 -
Fall Time
T
f
- 2.2
-
Input Capacitance
C
iss
- 1314 -
V
DS
=15V , V
GS
=0V,
Output Capacitance
C
oss
- 120 -
pF
f=1MHz
Reverse Transfer Capacitance
C
rss
- 88
-
Guaranteed Avalanche Characteristics
Single Pulse Avalanche Energy
V
DD
=25V, L=0.1mH,
EAS
45 -
-
mJ
(Note 5)
I
AS
=15A
Diode Characteristics
Continuous Source Current
I
S
-
-
8.5
A
(Note 1, 6)
V
G
=V
D
=0V , Force Current
Pulsed Source Current
I
SM
-
-
34
A
(Note 2, 6)
Diode Forward Voltage (Note 2)
V
SD
V
GS
=0V , I
S
=1A , T
J
=25°C
-
-
1.2
V
Note 1: The data tested by surface mounted on a 1 inch
2
FR-4 board with 2OZ copper.
Note 2: The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
Note 3: The EAS data shows Max. rating. The test condition is V
DD
=25V, V
GS
=10V, L=0.1mH, I
AS
=25A
Note 4: The power dissipation is limited by 150°C junction temperature
Note 5: The Min. value is 100% EAS tested guarantee.
Note 6: The data is theoretically the same as I
D
and I
DM
, in real applications, should be limited by total power
dissipation.
3/5
Axelite Confidential Materials, do not copy or distribute without written consent.
Rev.1.0 Nov.08, 2013
AMS4004
TYPICAL CHARACTERISTICS
90
20
I
D
=8A
75
I
D
Drain Current (A)
V
GS
=7V
V
GS
=5V
V
GS
=4.5V
V
GS
=3V
45
30
15
8
0
0
R
DSON
(mΩ)
60
V
GS
=10V
16
12
V
DS
, Drain-to-Source Voltage (V)
1
2
3
2
4
6
8
10
V
GS
(V)
Fig.1 Typical Output Characteristics
6
Fig.2 On-Resistance vs. G-S Voltage
10
V
DS
=20V
V
GS
, Gate to Source Voltage (V)
1.00
I
S
Source Current(A)
8
I
D
=8A
4
6
T
J
=150℃
2
T
J
=25℃
4
2
0
0.00
0.25
0.50
0.75
0
0
5
10
15
20
25
V
SD
, Source-to-Drain Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig.3 Forward Characteristics of Reverse
1.8
Fig.4 Gate-Charge Characteristics
1.8
1.4
1
0.6
0.2
-50
0
50
100
150
Normalized On Resistance
1.4
Normalized
V
GS(th)
1.0
0.6
0.2
-50
0
50
100
150
T
J
,Junction Temperature (℃ )
T
J
, Junction Temperature (℃)
Fig.5 Normalized V
GS(th)
vs. T
J
Fig.6 Normalized R
DSON
vs. T
J
4/5
Axelite Confidential Materials, do not copy or distribute without written consent.
Rev.1.0 Nov.08, 2013
AMS4004
TYPICAL CHARACTERISTICS (COUNTINOUS)
10000
100.00
F=1.0MHz
Ciss
Capacitance (pF)
1000
10.00
100us
1ms
I
D
(A)
1.00
10ms
100ms
Coss
100
Crss
0.10
10
1
5
9
13
17
21
25
T
A
=25
o
C
Single Pulse
DC
V
DS
Drain to Source Voltage (V)
0.01
0.01
0.1
1
V
DS
(V)
10
100
1000
Fig.7 Capacitance
1
Fig.8 Safe Operating Area
Normalized Thermal Response (R
θJA
)
DUTY=0.5
0.2
0.1
0.1
0.05
0.01
0.01
P
DM
T
ON
T
SINGLE
0.001
0.0001
0.001
0.01
0.1
1
10
D = T
ON
/T
T
Jpeak
= T
C
+P
DM
XR
θJC
100
1000
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
V
DS
90%
EAS=
BV
DSS
1
L x I
AS2
x
2
BV
DSS
BV
DSS
-V
DD
V
DD
10%
V
GS
T
d(on)
T
r
T
on
T
d(off)
T
f
T
off
I
AS
V
GS
Fig.10 Switching Time Waveform
Fig.11 Unclamped Inductive Switching Waveform
5/5
Axelite Confidential Materials, do not copy or distribute without written consent.
Rev.1.0 Nov.08, 2013
stm32/stm8
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