AMS4210
Dual N-CH Fast Switching MOSFETs
GENERAL DESCRIPTION
The AMS4210 is the highest performance trench N-ch MOSFETs with extreme high
cell density, which provide excellent R
DSON
and gate charge for most of the synchronous
buck converter applications.
The AMS4210 meet the RoHS and Green Product requirement 100% EAS
guaranteed with full function reliability approved.
FEATURES
-
-
-
-
-
Advanced high cell density Trench technology
Super Low Gate Charge
Excellent CdV/dt effect decline
100% EAS Guaranteed
Green Device Available
Product Summery
BV
DSS
40V
40V
R
DSON
17mΩ
8.5mΩ
I
D
7A
10.5A
SOP8 Pin configuration
1/8
Axelite Confidential Materials, do not copy or distribute without written consent.
Rev.1.0 Jul.31, 2014
AMS4210
ABSOLUTE MAXIMUM RATINGS
Characteristics
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 10V (Note 1)
Continuous Drain Current, V
GS
@ 10V (Note 1)
Pulsed Drain Current (Note 2)
Single Pulse Avalanche Energy (Note 3)
Avalanche Current
Total Power Dissipation (Note 4)
Storage Temperature Range
Operating Junction Temperature Range
Thermal Resistance Junction-Ambient (Note 1)
Thermal Resistance Junction-Case (Note 1)
Symbol
V
DS
V
GS
I
D
@T
A
=25°C
I
D
@T
A
=70°C
I
DM
EAS
I
AS
P
D
@T
A
=25°C
T
STG
T
J
R
θJA
R
θJC
Rating
Q1
Q2
40
40
±20
±20
7.5
10.5
5.7
8.4
50
50
55
166
25
39
1.5
1.5
-55 to 150
-55 to 150
85
36
Units
V
V
A
A
A
mJ
A
W
°C
°C
°C/W
°C/W
Note 1.The data tested by surface mounted on a 1 inch
2
FR-4 board with 2
OZ
copper.
Note 2.The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
Note 3.The EAS data shows Max. ratin . The test condition is V
DD
=25V, V
GS
=10V, L=0.1mH, I
AS
=25A
Note 4.The power dissipation is limited by 150
°C
junction temperature
Note 5.The data is theoretically the same as I
D
and I
DM
, in real applications, should be limited by total power
dissipation.
2/8
Axelite Confidential Materials, do not copy or distribute without written consent.
Rev.1.0 Jul.31, 2014
AMS4210
ELECTRICAL CHARACTERISTICS
(T
J
=25 °C, unless otherwise noted)
Q1 N-Channel
Min. Typ. Max. Unit
Parameter
Symbol
Conditions
40 -
-
V
Drain-Source Breakdown Voltage
BV
DSS
V
GS
=0V , I
D
=250uA
-
- V/°C
BVDSS Temperature Coefficient
△BV
DSS
/△T
J
Reference to 25°C, I
D
=1mA -
-
-
17
V
GS
=10V , I
D
=10A
Static Drain-Source
R
DS(ON)
m
On-Resistance (Note 2)
-
-
22
V
GS
=4.5V , I
D
=8A
1.0 - 2.5
V
Gate Threshold Voltage
V
GS(th)
V
GS
=V
DS
, I
D
=250uA
- -4.8 - mV/°C
V
GS(th)
Temperature Coefficient
△V
GS(th)
-
1
V
DS
=32V , V
GS
=0V , T
J
=25°C -
Drain-Source Leakage Current
I
DSS
uA
-
5
V
DS
=32V , V
GS
=0V , T
J
=55°C -
-
- ±100 nA
Gate-Source Leakage Current
I
GSS
V
GS
=±20V , V
DS
=0V
- 32
-
S
Forward Transconductance
Gfs
V
DS
=5V , I
D
=7A
R
g
V
DS
=0V , V
GS
=0V , f=1MHz
- 2.1 -
Gate Resistance
- 10
-
Total Gate Charge (4.5V)
Q
g
V
DS
=32V , V
GS
=4.5V ,
- 2.6 -
nC
Gate-Source Charge
Q
gs
I
D
=7A
- 4.1 -
Gate-Drain Charge
Q
gd
- 2.8 -
Turn-On Delay Time
T
d(on)
- 12.8 -
Rise Time
T
r
V
DD
=20V , V
GS
=10V ,
ns
R
G
=3.3 I
D
=7A
- 21.2 -
Turn-Off Delay Time
T
d(off)
- 6.4 -
Fall Time
T
f
- 1013 -
Input Capacitance
C
iss
V
DS
=15V , V
GS
=0V ,
- 107 -
pF
Output Capacitance
C
oss
f=1MHz
- 76
-
Reverse Transfer Capacitance
C
rss
Diode Characteristics
-
- 7.2
A
Continuous Source Current (Note 1,5)
I
S
V
G
=V
D
=0V , Force Current
-
-
50
A
Pulsed Source Current (Note 2,5)
I
SM
V
GS
=0V , I
S
=1A , T
J
=25°C
-
-
1
V
Diode Forward Voltage (Note 2)
V
SD
Note 1.The data tested by surface mounted on a 1 inch
2
FR-4 board with 2
OZ
copper.
Note 2.The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
Note 3.The EAS data shows Max. ratin . The test condition is V
DD
=25V, V
GS
=10V, L=0.1mH, I
AS
=25A
Note 4.The power dissipation is limited by 150°C junction temperature
Note 5.The data is theoretically the same as I
D
and I
DM
, in real applications, should be limited by total power
dissipation.
3/8
Axelite Confidential Materials, do not copy or distribute without written consent.
Rev.1.0 Jul.31, 2014
AMS4210
ELECTRICAL CHARACTERISTICS (COUNTINOUS)
(T
J
=25 °C, unless otherwise noted)
Q2 N-Channel
Min. Typ. Max. Unit
Parameter
Symbol
Conditions
40 -
-
V
Drain-Source Breakdown Voltage
BV
DSS
V
GS
=0V , I
D
=250uA
-
- V/°C
BVDSS Temperature Coefficient
△BV
DSS
/△T
J
Reference to 25°C, I
D
=1mA -
-
- 8.5
V
GS
=10V , I
D
=10A
Static Drain-Source
R
DS(ON)
m
On-Resistance (Note 2)
-
-
12
V
GS
=4.5V , I
D
=8A
1.0 - 2.5
V
Gate Threshold Voltage
V
GS(th)
V
GS
=V
DS
, I
D
=250uA
- -4.96 - mV/°C
V
GS(th)
Temperature Coefficient
△V
GS(th)
-
1
V
DS
=32V , V
GS
=0V , T
J
=25°C -
Drain-Source Leakage Current
I
DSS
uA
-
5
V
DS
=32V , V
GS
=0V , T
J
=55°C -
-
- ±100 nA
Gate-Source Leakage Current
I
GSS
V
GS
=±20V , V
DS
=0V
- 40
-
S
Forward Transconductance
Gfs
V
DS
=5V , I
D
=7A
R
g
V
DS
=0V , V
GS
=0V , f=1MHz
- 1.6 -
Gate Resistance
- 18.8 -
Total Gate Charge (4.5V)
Q
g
V
DS
=32V , V
GS
=4.5V ,
- 4.7 -
nC
Gate-Source Charge
Q
gs
I
D
=10A
- 8.2 -
Gate-Drain Charge
Q
gd
- 14.3 -
Turn-On Delay Time
T
d(on)
- 2.6 -
Rise Time
T
r
V
DD
=20V , V
GS
=10V ,
ns
R
G
=3.3 I
D
=10A
- 77
-
Turn-Off Delay Time
T
d(off)
- 4.8 -
Fall Time
T
f
- 2332 -
Input Capacitance
C
iss
V
DS
=15V , V
GS
=0V ,
- 193 -
pF
Output Capacitance
C
oss
f=1MHz
- 138 -
Reverse Transfer Capacitance
C
rss
Diode Characteristics
-
- 10.5 A
Continuous Source Current (Note 1,5)
I
S
V
G
=V
D
=0V , Force Current
-
-
50
A
Pulsed Source Current (Note 2,5)
I
SM
V
GS
=0V , I
S
=1A , T
J
=25°C
-
-
1
V
Diode Forward Voltage (Note 2)
V
SD
Note 1: The data tested by surface mounted on a 1 inch
2
FR-4 board with 2
OZ
copper.
Note 2: The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
Note 3: The EAS data shows Max. rating . The test condition is V
DD
=-25V, V
GS
=-10V, L=0.1mH, I
AS
=39A
Note 4: The power dissipation is limited by 150°C junction temperature
Note 5: The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power
dissipation.
4/8
Axelite Confidential Materials, do not copy or distribute without written consent.
Rev.1.0 Jul.31, 2014
AMS4210
TYPICAL CHARACTERISTICS
Q1 N-Channel
20
I
D
=7A
18
R
DSON
(mΩ)
16
14
12
2
4
V
GS
(V)
6
8
10
Fig.1 Typical Output Characteristics
12
Fig.2 On-Resistance vs. G-S Voltage
I
S
Source Current(A)
8
T
J
=150℃
4
T
J
=25℃
0
0.00
0.25
0.50
0.75
1.00
V
SD
, Source-to-Drain Voltage (V)
Fig.3 Forward Characteristics Of Reverse
1.8
Fig.4 Gate-Charge Characteristics
1.8
1.4
1
0.6
0.2
-50
0
50
100
150
Normalized On Resistance
1.4
Normalized
V
GS(th)
1.0
0.6
0.2
-50
0
50
100
150
T
J
,Junction Temperature (℃ )
T
J
, Junction Temperature (℃)
Fig.5 Normalized V
GS(th)
vs. T
J
Fig.6 Normalized R
DSON
vs. T
J
5/8
Axelite Confidential Materials, do not copy or distribute without written consent.
Rev.1.0 Jul.31, 2014
stm32/stm8
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