Data Sheet
HALL EFFECT LATCH FOR HIGH TEMPERATURE
GH1120
Product Description
The GH112 0 is a Hall-effect latch designed in
CMOS technology. The IC internally includes a
voltage regulator, Hall sensor with dynamic
offset cancellation system, Schmitt trigger and
an open-drain output driver. With no magnetic
field present, the output is in the “on”
state(Low). While the magnetic flux density(B)
is larger than operate point(Bop),the output will
be turned off(High) and the output is latched
“off” state until the magnetic flux density (B) is
lower than release point(Brp),then turn
on(Low). It has wide operating voltage range
and extended choice of temperature range, it
is quite suitable for use in automotive,
industrial and consumer applications.
Features
3.5V to 24V DC Operation Voltage
CMOS Technology
Chopper-stabilized amplifier stage
25mA Output Sink Current
Operating Temperature:
−40~
+125℃
High Magnetic Sensitivity: Bhys=60Gauss(Typ.)
Lead Free Package: SIP-3L and SC59
(Commonly known as TO-92S and SOT-23-3L in Asia)
Lead Free Finish/RoHS Compliant
Application
Rotor Position Sensing
Current Switch
Encoder
RPM Detection
I
A
I
B
M
Digital Hall Effect Sensor
Driver
&
Control Logic
I
C
I
a
I
b
I
c
RPM sensing
M: Three Phase Hall Motor
H
A
H
B
H
C
Hall Motor Driver
Fig.1 Functional Application Circuit in 3-Phase Hall Motor
Feb 29. 2016 Rev. 1. 0
GOCHIP ELECTRONICS TECHNOLOGY (SHANGHAI) CO., LTD.
1
Data Sheet
HALL EFFECT LATCH FOR HIGH TEMPERATURE
GH1120
Pin Description
Table
PIN #
1-1
Pin
definition
P/I/O
and
description
for
SIP-3L(TO-92S)
NAME
FUNCTION DESCRIPTION
1
2
3
VDD
GND
OUT
P
P
O
Input Power Supply
Ground
Output Stage of Open Drain
Table
PIN #
1-2
Pin
NAME
definition
P/I/O
and
description
for
SC59(SOT-23-3L)
FUNCTION DESCRIPTION
1
2
3
VDD
OUT
GND
P
O
P
Input Power Supply
Output Stage of Open Drain
Ground
Pin Configuration
(Top View)
SIP-3L(TO-92S)
SC59(SOT-23-3L)
3
1
1
2 3
2
Feb 29. 2016 Rev. 1. 0
GOCHIP ELECTRONICS TECHNOLOGY (SHANGHAI) CO., LTD.
2
Data Sheet
HALL EFFECT LATCH FOR HIGH TEMPERATURE
GH1120
Absolute Maximum Rating
(Note 1)
SYMBOL
PARAMETER
RATING
VDD
Vout (off)
Io (sink)
PD
Top
Tst
B
impaired.
Supply Voltage
Voltage
output
Output “ON” Current
Power Dissipation
Operation Temperature Range
Storage Temperature Range
Magnetic Flux
externally
applied
to
+28VDC
+28VDC max, OFF condition only
-0.5 V min., OFF or ON condition
50 mA
450mW(SIP-3L);230mW(SC59)
-40 to +125
℃
-65 to +150
℃
No limit.
Note 1:
Absolute Maximum Ratings are those values beyond which the life of a device may be
Electrical Characteristics
SYMBOL
PARAMETER
(T
A
= 25
℃
)
CONDITIONS
MIN
TYP
MAX
UNIT
VDD
V
O (SAT)
Supply Voltage
Output Saturation Voltage
Operating
VDD = 12V, OUT ”ON”,
Io = 10mA
VDD = 12V, OUT ”ON”,
Io = 20mA
3.5
24
300
500
V
mV
mV
IDD
I
LE
Tr
Tf
F
I
SW
Supply Current
Output Leakage Current
(Leakage into sensor output)
Output Switching
Time
Rise Time
Fall Time
VDD =3.5~24V,
OUT ”OFF”
Released
RL=820Ω, CL=20pF
RL=820Ω, CL=20pF
10
2.0
5.0
mA
μA
μ
μS
μS
KHz
10
0.45
0.45
Maximum Switching Frequency
Magnetic Characteristics
SYMBOL
PARAMETER
(T
A
= 25
℃
, VDD=12V)
MIN.
TYP.
MAX.
UNIT
Bop
Brp
Bhy
Operation Point
Release Point
Hysteresis
5
-80
30
30
-30
60
80
-5
90
Gauss
Gauss
Gauss
Feb 29. 2016 Rev. 1. 0
GOCHIP ELECTRONICS TECHNOLOGY (SHANGHAI) CO., LTD.
3
Data Sheet
HALL EFFECT LATCH FOR HIGH TEMPERATURE
GH1120
Functional Block Diagram
V
dd
Regulator
Hall
plate
Amp
GND
2
OUT
Figure 1. Function Block Diagram of GH1120
Operating Characteristics
V
out
(Output Voltage)
S
S
Marking side
V
cc
High
V
d
Marking side
B
hy
Low
N
SIP-3L(TO-92S)
N
SC59(SOT-23-3L)
V
SAT
B
rp
0
B
op
(Magnetic Flux Density)
Figure 2. Operating Characteristics of GH1120
Table 2: Switching Function
Pole
B<B
RP
B>B
OP
Parameter
South Pole
North Pole
OUT
High
Low
Pole
B>B
OP
B<B
RP
OUT
Low
High
(SC59/SOT-23-3L)
(SIP-3L/TO-92S)
Feb 29. 2016 Rev. 1. 0
GOCHIP ELECTRONICS TECHNOLOGY (SHANGHAI) CO., LTD.
4
Data Sheet
HALL EFFECT LATCH FOR HIGH TEMPERATURE
GH1120
80.0
Typical Characteristics
Magnetics parameters Vs. Ta
Magnetic parameters Vs. VDD
80
60
Magnetic (Gs)
40
20
0
-20
-40
-60
2
4
6
8
10
12 14
VDD(V)
16
18
20
22
24
BOP_25
℃
BHYST_25
℃
BRP_125
℃
BRP_25
℃
BOP_125
℃
BHYST_125
℃
Magnetic paramters(Gs)
60.0
40.0
20.0
0.0
-20.0
-40.0
-60.0
BOP,VDD=3.5V
BHYST,VDD=3.5V
BRP,VDD=24V
BRP,VDD=3.5V
BOP,VDD=24V,
BHYST,VDD=24V
-40
-20
0
20
Ta( )
℃
40
60
80
100
120
Figure 3-1. Magnetic parameters Vs. Ta
VDSon Vs. Ta
0.50
0.45
0.40
0.35
VDSon(V)
0.30
0.25
0.20
0.15
0.10
0.05
0.00
-40
-20
0
20
40
60
80
100
120
VDD=3.5V
Figure 3-2. Magnetic parameters Vs. VDD
VDSon Vs. VDD
0.50
0.45
0.40
0.35
VDSon(V)
0.30
0.25
0.20
0.15
0.10
0.05
0.00
0
4
8
12
VDD(V)
16
20
24
25
℃
85
℃
125
℃
-40
℃
VDD=12V
VDD=24V
Ta( )
℃
Figure 3-3. VDSon Vs. Ta
IDD vs Ta
Figure 3-4. VDSon Vs. VDD
IDD vs VDD
5.0
4.5
-40
℃
25
℃
85
℃
125
℃
5.0
4.5
4.0
3.5
IDD(mA)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-40
-20
0
20
40
Ta( )
℃
60
80
100
120
3.5V
12V
24V
IDD(mA)
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.0
4.0
8.0
12.0
VDD(V)
16.0
20.0
24.0
Figure 3-5. IDD Vs. Ta
IOFF Vs. Ta
0.10
0.09
0.08
0.07
Figure 3-6. IDD Vs. VDD
IOFF Vs. VDD
0.100
0.090
0.080
0.070
IOFF(uA)
VDD=3.5V
VDD=12V
VDD=24V
-40
℃
25
℃
85
℃
125
℃
IOFF(uA)
0.06
0.05
0.04
0.03
0.02
0.01
0.00
-40
-20
0
20
0.060
0.050
0.040
0.030
0.020
0.010
0.000
40
60
80
100
120
0
2
4
6
8
10
Ta( )
℃
12 14
VDD(V)
16
18
20
22
24
Figure 3-7. IOFF Vs. Ta
Feb 29. 2016 Rev. 1. 0
Figure 3-8. IOFF Vs. VDD
GOCHIP ELECTRONICS TECHNOLOGY (SHANGHAI) CO., LTD.
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