TPV60R080CFD, TPW60R080CFD
Wuxi Unigroup Microelectronics Company
600V Super-Junction Power MOSFET
FEATURES
Very low FOM R
DS(on)
×Q
g
100% avalanche tested
RoHS compliant
Fast Body Diode
APPLICATIONS
Switch Mode Power Supply (SMPS)
Uninterruptible Power Supply (UPS)
Power Factor Correction (PFC)
Device Marking and Package Information
Device
TPV60R080CFD
TPW60R080CFD
Package
TO-3PN
TO-247
Marking
60R080CFD
60R080CFD
Absolute Maximum Ratings
T
C
= 25ºC, unless otherwise noted
Parameter
Drain-Source Voltage (V
GS
= 0V)
Continuous Drain Current
Pulsed Drain Current
Gate-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Power Dissipation (T
C
= 25ºC)
Operating Junction and Storage Temperature Range
(note2)
(note1)
(note1)
(note1)
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
P
D
T
J
, T
stg
Value
600
47
141
±30
1120
15
1.76
390
-55~+150
Unit
V
A
A
V
mJ
A
mJ
W
ºC
Thermal Resistance
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
R
thJC
R
thJA
Value
0.32
K/W
62
Unit
V3.0
1
www.tsinghuaicwx.com
TPV60R080CFD, TPW60R080CFD
Wuxi Unigroup Microelectronics Company
Specifications
T
J
= 25ºC, unless otherwise noted
Value
Parameter
Static
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Gate-Source Threshold Voltage
Drain-Source On-Resistance (Note3)
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Drain-Source Body Diode Characteristics
Continuous Body Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Reverse Recovery Time
Reverse Recovery Charge
Peak Reverse Recovery Current
I
S
T
C
= 25ºC
I
SM
V
SD
t
rr
Q
rr
I
rrm
V
R
= 400V, I
F
= 26A,
di
F
/dt = 100A/μs
T
J
= 25ºC, I
SD
= 47A, V
GS
= 0V
--
--
--
--
--
--
0.9
180
1
10
141
1.2
--
--
--
V
ns
μC
A
--
--
47
A
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 400V, I
D
= 26A,
R
G
= 1.7Ω
V
DD
= 480V, I
D
= 47A,
V
GS
= 10V
--
V
GS
= 0V,
V
DS
= 50V,
f = 1.0MHz
--
--
--
--
--
--
--
--
--
5100
225
6.2
90
24
30
16
12
83
5
--
--
--
--
--
--
--
--
ns
--
--
nC
pF
(Note3)
V
(BR)DSS
I
DSS
V
DS
= 600V, V
GS
= 0V, T
J
= 150ºC
I
GSS
V
GS(th)
R
DS(on)
g
fs
V
GS
=
±30V
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 10V, I
D
= 20A
V
DS
= 10V, I
D
= 20A
--
--
2.5
--
--
--
--
--
65
40
100
±100
4.5
80
--
nA
V
mΩ
S
V
GS
= 0V, I
D
= 250µA
V
DS
= 600V, V
GS
= 0V, T
J
= 25ºC
600
--
--
--
--
5
V
μA
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes
1.
2.
3.
Repetitive Rating: Pulse Width limited by maximum junction temperature
I
AS
= 15A, V
DD
= 50V, R
G
= 25Ω, Starting T
J
= 25°C
Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 1%
V3.0
2
www.tsinghuaicwx.com
TPV60R080CFD, TPW60R080CFD
Wuxi Unigroup Microelectronics Company
Typical Characteristics
T
J
= 25ºC, unless otherwise noted
Figure 1. Output Characteristics
160
140
140
Figure 2. Transfer Characteristics
I
D
, Drain Current (A)
I
D
, Drain Current (A)
120
100
80
60
40
20
0
0
20V
10V
6V
5.5V
5V
4.5V
120
100
80
60
40
20
0
T
J
= 25ºC
T
J
= 150ºC
2
4
6
8
10
12
14
16
18
20
0
1
2
3
4
5
6
7
8
9
10
V
DS
, Drain-to-Source Voltage (V)
Figure 3. On-Resistance vs. Drain Current
85
10
5
V
GS
, Gate-to-Source Voltage (V)
Figure 4. Capacitance
R
DS(on)
, On-Resistance (mΩ)
Capacitance (pF)
80
V
GS
= 10V
T
J
= 25ºC
10
4
C
iss
75
10
3
C
oss
10
2
70
65
10
1
C
rss
V
GS
= 0
f = 1MHz
0
10
20
30
40
50
60
60
0
10
20
30
40
50
60
70
10
0
I
D
, Drain Current (A)
Figure 5. Gate Charge
10
10
3
V
DS
, Drain-to-Source Voltage (V)
Figure 6. Body Diode Forward Voltage
V
GS
, Gate-to-Source Voltage (V)
V
DS
= 120V
6
I
S
, Source Current (A)
8
10
2
T
J
= 150ºC
10
1
T
J
= 25ºC
V
DS
= 520V
4
10
0
2
10
-1
0
0
20
40
60
80
100
10
-2
0.2
0.4
0.6
0.8
1
1.2
Q
g
, Total Gate Charge (nC)
V
SD
, Source-to-Drain Voltage (V)
V3.0
3
www.tsinghuaicwx.com
TPV60R080CFD, TPW60R080CFD
Wuxi Unigroup Microelectronics Company
Typical Characteristics
T
J
= 25ºC, unless otherwise noted
Figure 7. On-Resistance vs. Temperature
3
2.5
2
1.5
1
0.5
-1
0
-100
-1.2
-100
Figure 8. Threshold Voltage vs. Temperature
0.6
0.4
V
GS
= 10V
I
D
= 20A
I
D
= 250µA
R
DS(on)
, (Normalized)
V
GS(th)
, (Variance)
0.2
0
-0.2
-0.4
-0.6
-0.8
-50
0
50
100
150
200
-50
0
50
100
150
200
T
J
, Junction Temperature (ºC)
Figure 9. Transient Thermal Impedance
10
0
T
J
, Junction Temperature (ºC)
Z
thJC
, Thermal Impedance (K/W)
10
-1
10
-2
10
-3
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
Single Pulse
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
-4
10
-7
T
p
, Pulse Width (s)
V3.0
4
www.tsinghuaicwx.com
TPV60R080CFD, TPW60R080CFD
Wuxi Unigroup Microelectronics Company
Figure A：Gate Charge Test Circuit and Waveform
Figure B：Resistive Switching Test Circuit and Waveform
Figure C：Unclamped Inductive Switching Test Circuit and Waveform
V3.0
5
www.tsinghuaicwx.com
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
