TMA8N65H, TMC8N65H,TMD8N65H, TMU8N65H
Wuxi Unigroup Microelectronics Company
650V N-Channel MOSFET
FEATURES
Fast switching
100% avalanche tested
Improved dv/dt capability
APPLICATIONS
Switch Mode Power Supply (SMPS)
Uninterruptible Power Supply (UPS)
Power Factor Correction (PFC)
Device Marking and Package Information
Device
TMA8N65H
TMC8N65H
TMD8N65H
TMU8N65H
Package
TO-220F
TO-262
TO-252
TO-251
Marking
A8N65H
C8N65H
D8N65H
U8N65H
Absolute Maximum Ratings
T
C
= 25ºC, unless otherwise noted
Value
Parameter
Drain-Source Voltage (V
GS
= 0V)
Continuous Drain Current
Pulsed Drain Current
Gate-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Power Dissipation (T
C
= 25ºC)
Operating Junction and Storage Temperature Range
(note2)
(note1)
(note1)
(note1)
Symbol
TO-220F
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
P
D
T
J
, T
stg
64
TO-262
650
8
32
±30
80
4
43
107
-55~+150
TO-251
TO-252
V
A
A
V
mJ
A
mJ
W
ºC
Unit
Thermal Resistance
Value
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
TO-220F
R
thJC
R
thJA
1.95
62.5
TO-262
TO-251
1.17
ºC/W
60
TO-252
Unit
V3.0
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TMA8N65H, TMC8N65H,TMD8N65H, TMU8N65H
Wuxi Unigroup Microelectronics Company
Specifications
T
J
= 25ºC, unless otherwise noted
Value
Parameter
Static
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Gate-Source Threshold Voltage
Drain-Source On-Resistance (Note3)
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Drain-Source Body Diode Characteristics
Continuous Body Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
S
T
C
= 25 ºC
I
SM
V
SD
t
rr
Q
rr
T
J
= 25ºC, I
SD
= 8A, V
GS
= 0V
V
GS
= 0V,I
S
= 8A,
di
F
/dt =100A /μs
--
--
--
--
--
--
310
4.1
32
1.4
--
--
V
ns
μC
--
--
8
A
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 325V, I
D
=8A,
R
G
= 25 Ω
V
DD
= 520V, I
D
= 8A,
V
GS
= 10V
--
V
GS
= 0V,
V
DS
= 25V,
f = 1.0MHz
--
--
--
--
--
--
--
--
--
1110
129
20
32
5
16
23
15
90
30
--
--
--
--
--
--
--
--
ns
--
--
nC
pF
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
V
GS
= 0V, I
D
= 250µA
V
DS
= 650V, V
GS
= 0V, T
J
= 25ºC
V
GS
=
±30V
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 10V, I
D
= 4A
650
--
--
3.0
--
--
--
--
--
0.87
--
1
±100
4.0
1.1
V
μA
nA
V
Ω
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes
1.
2.
3.
Repetitive Rating: Pulse width limited by maximum junction temperature
I
AS
= 6A, V
DD
= 50V, R
G
= 25 Ω, Starting T
J
= 25 ºC
Pulse Test: Pulse width ≤ 325μs, Duty Cycle ≤ 1%
V3.0
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TMA8N65H, TMC8N65H,TMD8N65H, TMU8N65H
Wuxi Unigroup Microelectronics Company
Typical Characteristics
T
J
= 25ºC, unless otherwise noted
Figure 1. Output Characteristics (T
J
= 25ºC)
12
10
Figure 2. Body Diode Forward Voltage
8
6
4
2
0
0
I
S
, Source Current (A)
I
D
, Drain Current (A)
20V
10V
8V
7V
6V
5V
4
8
12
16
20
0
0.4
0.8
1.2
1.6
2
V
DS
, Drain-to-Source Voltage (V)
Figure 3. Drain Current vs. Temperature
10
V
SD
, Source-to-Drain Voltage (V)
Figure 4. BV
DSS
Variation vs. Temperature
1.2
1.15
I
D
, Drain Current (A)
BV
DSS
(Normalized)
8
1.1
1.05
1
0.95
0.9
6
4
2
0
0
30
60
90
120
150
-50
-25
0
25
50
75
100
125
150
T
C
, Case Temperature (A)
Figure 5. Transfer Characteristics
R
DS(on)
, On-Resistance (Normalized)
10
3
T
C
, Case Temperature (ºC)
Figure 6. On-Resistance vs. Temperature
V
GS
= 10V I
D
= 4A
2.5
2
1.5
1
0.5
0
-75
-25
25
75
125
I
D
, Drain Current (A)
8
T
J
= 25ºC
6
T
J
= 150ºC
4
2
0
0
2
4
6
8
10
V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (ºC)
V3.0
3
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TMA8N65H, TMC8N65H,TMD8N65H, TMU8N65H
Wuxi Unigroup Microelectronics Company
Typical Characteristics
T
J
= 25ºC, unless otherwise noted
Figure 7. Capacitance
10
4
10
Figure 8. Gate Charge
V
GS
, Gate-to-Source Voltage (V)
C
iss
Capacitance (pF)
10
3
8
C
oss
10
2
6
V
DD
= 120V
V
DD
= 325V
C
rss
10
1
4
V
DD
= 520V
2
V
GS
= 0V
f = 1MHz
10
0
0
10
20
30
40
50
0
0
10
20
30
40
V
DS
, Drain-to-Source Voltage (V)
Figure 9. Transient Thermal Impedance
TO-262，TO-251,TO-252
10
1
10
1
Q
g
, Total Gate Charge (nC)
Figure 10. Transient Thermal Impedance
TO-220F
Z
thJC
, Thermal Impedance (K/W)
Z
thJC
, Thermal Impedance (K/W)
10
0
10
0
10
-1
10
-2
10
-3
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
Single Pulse
10
-1
10
-2
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
Single Pulse
10
-4
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
-3
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
T
p
, Pulse Width (s)
T
p
, Pulse Width (s)
V3.0
4
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TMA8N65H, TMC8N65H,TMD8N65H, TMU8N65H
Wuxi Unigroup Microelectronics Company
Figure A：Gate Charge Test Circuit and Waveform
Figure B：Resistive Switching Test Circuit and Waveform
Figure C：Unclamped Inductive Switching Test Circuit and Waveform
V3.0
5
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