TSJ10N06AT
Wuxi Unigroup Microelectronics Company
60V N-Channel DTMOS
FEATURES
Trench Power DTMOS technology
Low R
DS(ON)
Low Gate Charge
Optimized for fast-switching applications
APPLICATIONS
Synchronous Rectification in DC/DC and AC/DC Converters
Isolated DC/DC Converters in Telecom and Industrial
Device Marking and Package Information
Device
TSJ10N06AT
Package
SOP-8
Marking
10N06AT
Absolute Maximum Ratings
T
C
= 25º unless otherwise noted
C,
Parameter
Drain-Source Voltage (V
GS
= 0V)
Continuous Drain Current
Pulsed Drain Current
Gate-Source Voltage
(note1)
Symbol
V
DSS
I
D
I
DM
V
GSS
Value
60
10
40
±20
Unit
V
A
A
V
Single Pulse Avalanche Energy
Avalanche Current
Power Dissipation (T
C
= 25º
C)
(note2)
(note1)
E
AS
I
AS
P
D
T
J
, T
stg
20
20
3.1
-55~+150
mJ
A
W
º
C
Operating Junction and Storage Temperature Range
Thermal Resistance
Parameter
Junction-to-Drain Lead
Thermal Resistance, Junction-to-Ambient
Symbol
R
thJC
R
thJA
Value
24
º
C/W
40
Unit
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TSJ10N06AT
Wuxi Unigroup Microelectronics Company
Specifications
T
J
= 25º unless otherwise noted
C,
Value
Parameter
Static
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Gate-Source Threshold Voltage
Drain-Source On-Resistance (Note3)
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Q
g
(4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
V
DD
= 30V, I
D
= 10A,
R
G
= 3Ω
V
DD
= 30V, I
D
= 10A,
V
GS
= 10V
--
--
--
--
--
--
11
3.1
5.1
7
3
20
--
nC
--
--
--
--
ns
--
C
iss
C
oss
C
rss
Q
g
(10V)
--
V
GS
= 0V,
V
DS
= 30V,
f = 1.0MHz
--
--
--
1134
123
12
21
--
--
--
--
pF
(Note3)
V
(BR)DSS
I
DSS
V
DS
= 60V, V
GS
= 0V, T
J
= 150º
C
I
GSS
V
GS(th)
R
DS(on)
V
GS
= 4.5V, I
D
= 9A
g
fs
V
DS
= 5V, I
D
= 10A
--
--
15
35
19
--
S
V
GS
=
±20V
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 10V, I
D
= 10A
--
--
1.1
--
--
--
--
12
100
±100
2.5
15
nA
V
mΩ
V
GS
= 0V, I
D
= 250µA
V
DS
= 60V, V
GS
= 0V, T
J
= 25º
C
60
--
--
--
--
1
V
μA
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Turn-off Fall Time
Drain-Source Body Diode Characteristics
t
f
--
3
--
Continuous Body Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
S
T
C
= 25º
C
I
SM
V
SD
t
rr
Q
rr
T
J
= 25º I
SD
= 1A, V
GS
= 0V
C,
I
F
= 10A,
di
F
/dt = 500A/μs
--
--
--
--
--
--
--
0.72
17
60
4
A
12
1
--
--
V
ns
nC
Notes
1.
Repetitive Rating: Pulse Width limited by maximum junction temperature
2.
3.
4.
I
AS
= 20A, V
DD
= 50V, R
G
= 25Ω, Starting T
J
= 25°C
Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 1%
When mounted on 1" in square copper board
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TSJ10N06AT
Wuxi Unigroup Microelectronics Company
Typical Characteristics
T
J
= 25º unless otherwise noted
C,
Figure 1. Output Characteristics
50
50
Figure 2. Transfer Characteristics
V
DS
= 5V
40
40
I
D
, Drain Current (A)
30
I
D
, Drain Current (A)
20
10
10V
6V
4.5V
4V
3.5V
3V
30
20
T
J
= 125º
C
T
J
= 25º
C
10
0
0
1
2
3
4
5
0
1
2
3
4
5
V
DS
, Drain-to-Source Voltage (V)
Figure 3. On-Resistance vs. Drain Current
20
10
4
V
GS
, Gate-to-Source Voltage (V)
Figure 4. Capacitance
R
DS(on)
, On-Resistance (mΩ)
Capacitance (pF)
18
16
14
C
iss
10
3
V
GS
= 4.5V
T
J
= 25º
C
10
2
C
oss
12
10
8
0
5
10
15
20
25
30
V
GS
= 10V
T
J
= 25º
C
10
1
C
rss
V
GS
= 0
f = 1MHz
10
0
0
10
20
30
40
50
I
D
, Drain Current (A)
Figure 5. Gate Charge
10
V
DS
, Drain-to-Source Voltage (V)
Figure 6. Body Diode Forward Voltage
10
1
V
GS
, Gate-to-Source Voltage (V)
I
s
, Source Current (A)
8
10
0
10
-1
10
-2
10
-3
10
-4
T
J
= 125º
C
6
T
J
= 25º
C
4
V
DD
= 30V
2
10
-5
0
5
10
15
20
25
0
0.2
0.4
0.6
0.8
1
0
Q
g
, Total Gate Charge (nC)
V
SD
, Source-to-Drain Voltage (V)
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TSJ10N06AT
Wuxi Unigroup Microelectronics Company
Typical Characteristics
T
J
= 25º unless otherwise noted
C,
Figure 7. On-Resistance vs.
Junction Temperature
2.2
2
1.2
1.1
1
0.9
0.8
0.7
0.6
-100
Figure 8. Threshold Voltage vs.
Junction Temperature
R
DS(on)
, (Normalized)
1.8
1.6
1.4
1.2
V
GS
= 10V
I
D
= 10A
V
GS
= 4.5V
I
D
= 9A
V
GS(th)
, (Variance)
I
D
= 250µA
1
0.8
0
25
50
75
100
125
150
175
-50
0
50
100
150
200
T
J
, Junction Temperature (º
C)
Figure 9. Transient Thermal Impedance
10
1
T
J
, Junction Temperature (º
C)
Z
thJC
, Thermal Impedance
(Normalized)
10
0
10
-1
10
-2
D = 0.5
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
Single Pulse
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
10
-3
10
-5
10
-4
T
p
, Pulse Width (s)
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TSJ10N06AT
Wuxi Unigroup Microelectronics Company
Figure A：Gate Charge Test Circuit and Waveform
Figure B：Resistive Switching Test Circuit and Waveform
Figure C：Unclamped Inductive Switching Test Circuit and Waveform
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