TMA7N65H, TMP7N65H, TMD7N65H, TMU7N65H
Wuxi Unigroup Microelectronics Company
650V N-Channel MOSFET
FEATURES
l
Fast switching
l
100% avalanche tested
l
Improved dv/dt capability
APPLICATIONS
l
Switch Mode Power Supply (SMPS)
l
Uninterruptible Power Supply (UPS)
l
Power Factor Correction (PFC)
Device Marking and Package Information
Device
TMA7N65H
TMP7N65H
TMD7N65H
TMU7N65H
Package
TO-220F
TO-220
TO-252
TO-251
Marking
A7N65H
P7N65H
D7N65H
U7N65H
Absolute Maximum Ratings
T
C
= 25ºC, unless otherwise noted
Parameter
Drain-Source Voltage (V
GS
= 0V)
Continuous Drain Current
Pulsed Drain Current
Gate-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Power Dissipation (T
C
= 25ºC)
Operating Junction and Storage Temperature Range
(note2)
(note1)
(note1)
(note1)
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
P
D
T
J
, T
stg
63
Value
TO-220F
TO-251
650
7
28
±30
198
3.5
40
97
-55~+150
TO-252
TO-220
Unit
V
A
A
V
mJ
A
mJ
W
ºC
Thermal Resistance
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
R
thJC
R
thJA
Value
TO-220F
1.98
62.5
TO-251
TO-252
1.29
60
TO-220
Unit
ºC/W
V3.0
1
www.tsinghuaicwx.com
TMA7N65H, TMP7N65H, TMD7N65H, TMU7N65H
Wuxi Unigroup Microelectronics Company
Specifications
T
J
= 25ºC, unless otherwise noted
Parameter
Static
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Gate-Source Threshold Voltage
Drain-Source On-Resistance (Note3)
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Drain-Source Body Diode Characteristics
Continuous Body Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
S
I
SM
V
SD
t
rr
Q
rr
T
C
= 25 ºC
T
J
= 25ºC, I
SD
= 7A, V
GS
= 0V
V
GS
= 0V,I
S
= 7A,
di
F
/dt =100A /μs
--
--
--
--
--
--
--
--
300
4.1
7.0
28
1.4
--
--
A
V
ns
μC
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 325V, I
D
= 7A,
R
G
= 25 Ω
V
DD
= 520V, I
D
= 7A,
V
GS
= 10V
V
GS
= 0V,
V
DS
= 25V,
f = 1.0MHz
--
--
--
--
--
--
--
--
--
--
891
110
14
22
4.3
13
15
18
80
35
--
--
--
--
--
--
--
--
--
--
ns
nC
pF
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
V
GS
= 0V, I
D
= 250µA
V
DS
= 650V, V
GS
= 0V, T
J
= 25ºC
V
GS
=
±30V
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 10V, I
D
= 3.5A
650
--
--
3.0
--
--
--
--
--
1.1
--
1
±100
4.0
1.35
V
μA
nA
V
Ω
Symbol
Test Conditions
Value
Min.
Typ.
Max.
Unit
Notes
1.
2.
3.
Repetitive Rating: Pulse width limited by maximum junction temperature
I
AS
= 4.5A, V
DD
= 50V, R
G
= 25 Ω, Starting T
J
= 25 ºC
Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 1%
V3.0
2
www.tsinghuaicwx.com
TMA7N65H, TMP7N65H, TMD7N65H, TMU7N65H
Wuxi Unigroup Microelectronics Company
Typical Characteristics
T
J
= 25ºC, unless otherwise noted
Figure 1. Output Characteristics (T
J
= 25ºC)
20V
10V
8V
7V
6V
5V
Figure 2. Body Diode Forward Voltage
I
D
, Drain Current (A)
V
DS
, Drain-to-Source Voltage (V)
Figure 3. Drain Current vs. Temperature
I
S
, Source Current (A)
V
SD
, Source-to-Drain Voltage (V)
Figure 4. BV
DSS
Variation vs. Temperature
V
GS
= 0V
I
D
= 250μA
I
D
, Drain Current (A)
T
J
, Case Temperature (ºC)
Figure 5. Transfer Characteristics
R
DS(on)
, On-Resistance (Normalized)
T
J
= 25ºC
BV
DSS
(Normalized)
T
J
, Junction Temperature (ºC)
Figure 6. On-Resistance vs. Temperature
V
GS
= 10V
I
D
=3.5A
I
D
, Drain Current (A)
T
J
= 150ºC
V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (ºC)
V3.0
3
www.tsinghuaicwx.com
TMA7N65H, TMP7N65H, TMD7N65H, TMU7N65H
Wuxi Unigroup Microelectronics Company
Typical Characteristics
T
J
= 25ºC, unless otherwise noted
Figure 7. Capacitance
10
4
Figure 8. Gate Charge
V
GS
, Gate-to-Source Voltage (V)
C
iss
Capacitance (pF)
10
3
C
oss
10
2
V
DD
= 130V
V
DD
= 325V
V
DD
= 520V
C
rss
10
1
V
GS
= 0V
f = 1MHz
10
0
V
DS
, Drain-to-Source Voltage (V)
Figure 9. Transient Thermal Impedance
10
1
Q
g
, Total Gate Charge (nC)
Figure 10. Transient Thermal Impedance
TO-220F
10
1
TO-220,TO-251,TO-252
Z
thJC
, Thermal Impedance (K/W)
Z
thJC
, Thermal Impedance (K/W)
10
0
10
0
10
-1
10
-2
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
Single Pulse
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
-1
10
-2
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
Single Pulse
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
-3
10
-3
10
-6
T
p
, Pulse Width (s)
T
p
, Pulse Width (s)
V3.0
4
www.tsinghuaicwx.com
TMA7N65H, TMP7N65H, TMD7N65H, TMU7N65H
Wuxi Unigroup Microelectronics Company
Figure A：Gate Charge Test Circuit and Waveform
Figure B：Resistive Switching Test Circuit and Waveform
Figure C：Unclamped Inductive Switching Test Circuit and Waveform
V3.0
5
www.tsinghuaicwx.com
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
