TAK CHEONG
®
SEM IC O N DU C TO R
150mW SOT-523 SURFACE MOUNT
Green Product
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
P
D
R
θJA
T
STG
T
J
T
A
= 25°C unless otherwise noted
Value
60
Units
V
V
mA
mW
°C /W
°C
°C
3
Parameter
Drain-Source Voltage
Continuous Gate-Source Voltage
Continuous Drain Current
Power Dissipation
Thermal Resistance from Junction to Ambient
Storage Temperature Range
Operating Junction Temperature
2
1. Gate
2. Source
3. Drain
SOT-523
±20V
115
150
833
-55 to +150
+150
1
These ratings are limiting values above which the serviceability of the device may be impaired.
Specification Features:
Low On-resistance
Low Gate Threshold Voltage
Low Input capacitance
RoHS Compliant
Green EMC
Matte Tin(Sn) Lead Finish
Weight: approx. 0.002g
Electrical Symbol:
Device Marking Code:
K72
DB Number: DB-246
March 2015, Revision A
Page 1
2N7002T
Plastic Package
N-Channel MOSFET
TAK CHEONG
®
SEM IC O N DU C TO R
Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Off Characteristics
Symbol
BV
DSS
I
GSS
I
DSS
Parameter
Drain-Source Breakdown Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Test Condition
V
GS
=0V, I
D
=10uA
V
DS
=0V, V
GS
=±20V
V
DS
=60V, V
GS
=0V
Limits
Min
60
±1
100
Typ
Max
Unit
Volts
uA
nA
On Characteristics
Symbol
V
th(GS)
I
D(ON)
R
DS(on)
Parameter
Gate-Threshold Voltage
On-state Drain Current
Drain-Source On-Resistance
Test Condition
V
DS
= V
GS
, I
D
=250uA
V
GS
=10V, V
DS
=7V
V
GS
=10V, I
D
=500mA
V
GS
=5V, I
D
=50mA
Limits
Min
1
500
7.5
7.5
80
500
3.75
0.375
1
Typ
Max
Unit
Volts
mA
Ω
Ω
ms
V
V
V
g
fs
V
DS(on)
Forward Trans Conductance
Drain-Source On-Voltage
V
DS
=10V, I
D
=200mA
V
GS
=10V, I
D
=500mA
V
GS
=5V, I
D
=50mA
V
SD
Diode Forward Voltage
I
S
=250mA, V
GS
=0V
Dynamic Characteristics
Symbol
Ciss
Coss
Crss
Parameter
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Test Condition
Limits
Min
--
Typ
--
--
--
Max
50
25
5.0
Unit
pF
pF
pF
V
DS
= 25V, V
GS
= 0V,
f = 1.0MHz
--
--
Switching Characteristics
Symbol
t
D(on)
t
D(off)
Parameter
Turn-on Time
Turn-off Time
Test Condition
V
DD
=10V, R
L
=20Ω,
I
D
=500mA, V
GEN
=10V,
R
G
= 10Ω
Limits
Min
--
--
Typ
5.6
25
Max
--
--
Unit
nS
nS
DB Number: DB-246
March 2015, Revision A
Page 2
TAK CHEONG
®
SEM IC O N DU C TO R
SOT-523 Package Outline
DIM
A
A1
A2
b1
b2
c
D
E
E1
Typical Soldering Pattern:
e
e1
L
L1
θ
MILLIMETERS
MIN
0.70
0.00
0.70
0.15
0.25
0.10
1.50
0.70
1.45
MAX
0.90
0.10
0.80
0.25
0.35
0.20
1.70
0.90
1.75
MIN
INCHES
MAX
0.035
0.004
0.031
0.010
0.014
0.008
0.067
0.035
0.069
0.028
0.000
0.028
0.006
0.010
0.004
0.059
0.028
0.057
0.50 TYP.
0.90
1.10
0.020 TYP.
0.035
0.043
0.40 REF.
0.10
0
O
0.016 REF.
0.004
0
O
0.30
8
O
0.012
8
O
NOTES:
1. Above package outline conforms to JEITA EAIJ ED-7500A SC-75A.
2. Dimensions are exclusive of Burrs, Mold Flash & Tie Bar extrusions.
DB Number: DB-246
March 2015, Revision A
Page 3
TAK CHEONG
®
DISC LA I MER NOTIC E
NOTICE
The information presented in this document is for reference only. Tak Cheong reserves the right to make
changes without notice for the specification of the products displayed herein.
The product listed herein is designed to be used with ordinary electronic equipment or devices, and not
designed to be used with equipment or devices which require high level of reliability and the malfunction of with
would directly endanger human life (such as medical instruments, transportation equipment, aerospace
machinery, nuclear-reactor controllers, fuel controllers and other safety devices), Tak Cheong Semiconductor
Co., Ltd., or anyone on its behalf, assumes no responsibility or liability for any damagers resulting from such
improper use of sale.
This publication supersedes & replaces all information reviously supplied. For additional information, please visit
our website
http://www.takcheong.com,
or consult your nearest Tak Cheong’s sales office for further assistance.
Number: DB-100
April 14, 2008 / A
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