XB8358D0
______________________________________ __________________________________
_______________
________________
One Cell Lithium-ion/Polymer Battery Protection IC
GENERAL DESCRIPTION
The XB8358D0 product is a high
integration solution for lithium-
ion/polymer battery protection.
XB8358D0 contains advanced power
MOSFET, high-accuracy voltage
detection circuits and delay circuits.
XB8358D0 is put into an ultra-small
SOT23-5 package and only one
external component makes it an ideal
solution in limited space of battery pack.
XB8358D0 has all the protection functions
required in the battery application including
overcharging, overdischarging, overcurrent
and load short circuiting protection etc. The
accurate overcharging detection voltage
ensures safe and full utilization charging.
The low standby current drains little current
from the cell while in storage.
The device is not only targeted for digital
cellular phones, but also for any other
Li-Ion and Li-Poly battery-powered
information appliances requiring long-
term battery life.
FEATURES
·
Protection of Charger Reverse
Connection
·
Protection of Battery Cell Reverse
Connection
·
Integrate Advanced Power MOSFET
with Equivalent of 45mΩ R
SS(ON)
·
Ultra-small SOT23-5 Package
· One External Capacitor
Only
Required
·
Over-temperature Protection
·
Overcharge Current Protection
·
Three-step Overcurrent Detection:
-Overdischarge Current 1
-Overdischarge Current 2
-Load Short Circuiting
·
Charger Detection Function
· Battery Charging Function
0V
- Delay Times are generated inside
·
High-accuracy Voltage Detection
· Current Consumption
Low
- Operation Mode: 2.8μ A typ.
- Power-down Mode: 1.5μ A typ.
·
RoHS Compliant and Lead (Pb) Free
APPLICATIONS
One-Cell Lithium-ion Battery Pack
Lithium-Polymer Battery Pack
Figure 1. Typical Application Circuit
XySemi Inc
-1-
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REV0.3
XB8358D0
______________________________________ ______________________ _________________________ _________________________
ORDERING INFORMATION
PART
NUMBER
XB8358D0
Overcharg Overcharge Overdischarge Overdischarge Overcurrent
Release
Detection
Release
Detection
Pack e Detection
Voltage
Voltage
Voltage
Voltage
age
Current
[I
OV1
] (A)
[V
CU
] (V)
[V
CL
] (V)
[V
DL
] (V)
[V
DR
] (V)
SOT
23-5
4.250
4.10
2.90
3.0
3.2
Top Mark
8358DYW
(note)
Note: “YW” is manufacture date code, “Y” means the year, “W” means the week
PIN CONFIGURATION
Figure 2. PIN Configuration
PIN DESCRIPTION
XB8358D0 PIN
NUMBER
1
2
3
4,5
PIN NAME
VT
GND
VDD
VM
PIN DESCRIPTION
Test pin；only for vendor not used by application
Ground, connect the negative terminal of the battery to this pin
Power Supply
The negative terminal of the battery pack. The internal FET switch
connects this terminal to GND
ABSOLUTE MAXIMUM RATINGS
(Note: Do not exceed these limits to prevent damage to the device. Exposure to absolute maximum rating
conditions for long periods may affect device reliability.)
PARAMETER
VALUE
UNIT
VDD input pin voltage
VM input pin voltage
Operating Ambient Temperature
XySemi Inc
-2-
-0.3 to 6
-6 to 10
-40 to 85
V
V
°
C
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REV0.3
XB8358D0
______________________________________ ______________________ _________________________ _________________________
Maximum Junction Temperature
Storage Temperature
Lead Temperature ( Soldering, 10 sec)
Power Dissipation at T=25°
C
Package
Thermal Resistance (Junction to Ambient) θ
JA
Package Thermal Resistance (Junction to Case) θ
JC
ESD
125
-55 to 150
300
0.4
250
130
2000
°
C
°
C
°
C
W
°
C/W
°
C/W
V
ELECTRICAL CHARACTERISTICS
Typicals and limits appearing in normal type apply for TA = 25oC, unless otherwise specified
Parameter
Detection Voltage
4.225
Overcharge Detection Voltage
Overcharge Release Voltage
Overdischarge Detection Voltage
V
CU
4.075
V
CL
2.85
V
DL
2.95
Overdischarge Release Voltage
Charger Detection Voltage
Detection Current
Overdischarge Current1 Detection
Load Short-Circuiting
Detection
Current Consumption
Current Consumption in Normal
Operation
Current Consumption in power
Down
VM Internal Resistance
Internal Resistance between
VM and V
DD
Internal Resistance between VM
and GND
FET on Resistance
Equivalent FET on Resistance
Over Temperature Protection
Over Temperature Protection
XySemi Inc
T
SHD+
-3-
120
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REV0.3
R
SS(ON)
V
DD
=3.6V I
VM
=1.0A
45
m
Ω
R
VMD
R
VMS
V
DD
=3.5V
VM=1.0V
V
DD
=2.0V
VM=1.0V
320
100
k
Ω
k
Ω
I
IOV1
I
SHORT
V
DD
=3.5V
V
DD
=3.5V
2.3
10
3.2
20
4.1
30
A
A
V
DR
V
CHA
-0.07
-0.12
-0.2
3.0
3.05
V
V
2.9
2.95
V
4.10
4.125
V
4.25
4.275
V
Symbol
Test Condition
Min
Typ
Max
Unit
I
OPE
I
PDN
V
DD
=3.5V
VM =0V
V
DD
=2.0V
VM pin floating
2.8
1.5
6
μ
A
μ
A
XB8358D0
______________________________________ ______________________ _________________________ _________________________
Over Temperature Recovery Degree T
SHD-
Detection Delay Time
Overcharge Voltage Detection
Delay Time
Overdischarge Voltage Detection
Delay Time
Overdischarge Current
Detection
Delay Time
Load Short-Circuiting Detection
Delay Time
t
CU
t
DL
t
IOV
t
SHORT
V
DD
=3.5V
V
DD
=3.5V
100
o
C
130
40
10
75
mS
mS
mS
uS
Figure 3. Functional Block Diagram
FUNCTIONAL DESCRIPTION
The XB8358D0 monitors the voltage and
current of a battery and protects it from
being damaged due to overcharge voltage,
overdischarge voltage, overdischarge
current, and short circuit conditions by
disconnecting the battery from the load
XySemi Inc
-4-
or charger. These functions are required in
order to operate the battery cell within
specified limits.
The device requires only one external
capacitor. The MOSFET is integrated and
its R
SS(ON)
is as low as 45 mΩ typical.
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REV0.3
XB8358D0
______________________________________ ______________________ _________________________ _________________________
Normal operating mode
If no exception condition is detected,
charging and discharging can be carried
out freely. This condition is called the
normal operating mode.
Overcharge Condition
When the battery voltage becomes higher
than the overcharge detection voltage (V
CU
)
during charging under normal condition
and the state continues for the overcharge
detection delay time (t
CU
) or longer, the
XB8358D0 turns the charging control FET
off to stop charging. This condition is called
the overcharge condition. The overcharge
condition is released in the following two
cases:
1, When the battery voltage drops below
the overcharge release voltage (V
CL
), the
XB8358D0 turns the charging control FET
on and returns to the normal condition.
2, When a load is connected and
discharging starts, the XB8358D0 turns the
charging control FET on and returns to the
normal condition. The release mechanism
is as follows: the discharging current flows
through an internal parasitic diode of the
charging FET immediately after a load is
connected and discharging starts, and the
VM pin voltage increases about 0.7 V
(forward voltage of the diode) from the
GND pin voltage momentarily. The
XB8358D0 detects this voltage and
releases the overcharge condition.
Consequently, in the case that the battery
voltage is equal to or lower than the
overcharge detection voltage (V
CU
), the
XB8358D0 returns to the normal condition
immediately, but in the case the battery
voltage is higher than the overcharge
detection voltage (V
CU
),the chip does not
return to the normal condition until the
battery voltage drops below the overcharge
detection voltage (V
CU
) even if the load is
XySemi Inc
-5-
connected. In addition, if the VM pin
voltage is equal to or lower than the
overcurrent 1 detection voltage when a
load is connected and discharging starts,
the chip does not return to the normal
condition.
Remark
If the battery is charged to a voltage higher
than the overcharge detection voltage (V
CU
) and
the battery voltage does not drops below the
overcharge detection voltage (V
CU
) even when a
heavy load, which causes an overcurrent, is
connected, the overcurrent 1 and overcurrent 2 do
not work until the battery voltage drops below the
overcharge detection voltage (V
CU
). Since an actual
battery has, however, an internal impedance of
several dozens of mΩ , and the battery voltage
drops immediately after a heavy load which causes
an overcurrent is connected, the overcurrent 1 and
overcurrent 2 work. Detection of load short-
circuiting works regardless of the battery voltage.
Overdischarge Condition
When the battery voltage drops below the
overdischarge detection voltage (V
DL
)
during discharging under normal condition
and it continues for the overdischarge
detection delay time (t
DL
) or longer, the
XB8358D0 turns the discharging control
FET off and stops discharging. This
condition is called overdischarge condition.
After the discharging control FET is turned
off, the VM pin is pulled up by the
R
VMD
resistor
between VM and VDD in XB8358D0.
Meanwhile when VM is bigger than 1.5
V (typ.) (the load short-circuiting detection
voltage), the current of the chip is reduced
to the power-down current (
I
PDN
). This
condition is called power-down condition.
The VM and VDD pins are shorted by the
R
VMD
resistor in the IC under the
overdischarge and power-down conditions.
The power-down condition is released
when a charger is connected and the
potential difference between VM and VDD
becomes 1.3 V (typ.) or higher (load short-
circuiting detection voltage). At this time,
the FET is still off. When the battery
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