XB8089D
______________________________________ ________________________________________________________________________________
One Cell Lithium-ion/Polymer Battery Protection IC
GENERAL DESCRIPTION
The XB8089D Series product is a high
integration solution for lithium-
ion/polymer battery protection.
XB8089D contains advanced power
MOSFET, high-accuracy voltage
detection circuits and delay circuits.
XB8089D is put into an SOP8-PP
package and only one external
component makes it an ideal solution in
limited space of battery pack.
XB8089D has all the protection functions
required in the battery application including
overcharging, overdischarging, overcurrent
and load short circuiting protection etc. The
accurate overcharging detection voltage
ensures safe and full utilization charging.
The low standby current drains little current
from the cell while in storage.
The device is not only targeted for digital
cellular phones, but also for any other
Li-Ion and Li-Poly battery-powered
information appliances requiring long-
term battery life.
·
Protection of Battery Cell Reverse
Connection
·
Integrate Advanced Power MOSFET
with Equivalent of 20mΩ R
SS(ON)
·
SOP8-PP Package
· One External Capacitor
Only
Required
·
Over-temperature Protection
·
Overcharge Current Protection
·
Two-step Overcurrent Detection:
-Overdischarge Current
-Load Short Circuiting
·
Charger Detection Function
· Battery Charging Function
0V
- Delay Times are generated inside
·
High-accuracy Voltage Detection
· Current Consumption
Low
- Operation Mode:6μ A typ.
- Power-down Mode: 3μ A typ.
·
RoHS Compliant and Lead (Pb) Free
APPLICATIONS
One-Cell Lithium-ion Battery Pack
Lithium-Polymer Battery Pack
FEATURES
·
Protection of Charger Reverse
Connection
Figure 1. Typical Application Circuit
XySemi Inc
-1-
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REV0.7
XB8089D
______________________________________ ____________________________________________________
____________________________
ORDERING INFORMATION
PART
NUMBER
XB8089D
Overcharg Overcharge Overdischarge Overdischarge Overcurrent
Release
Detection
Release
Detection
Packa e Detection
Voltage
Voltage
Voltage
Voltage
ge
Current
[I
OV1
] (A)
[V
CU
] (V)
[V
CL
] (V)
[V
DL
] (V)
[V
DR
] (V)
SOP8
-PP
4.250
4.10
2.50
3.0
10.0
Top Mark
XB8089DYW
(note)
Note: “YW” is manufacture date code, “Y” means the year, “W” means the week
PIN CONFIGURATION
Figure 2. PIN Configuration
PIN DESCRIPTION
XB8089D PIN
NUMBER
1,2,3,4
5,7,8
6
9
PIN NAME
VM
GND
VDD
EPAD
PIN DESCRIPTION
The negative terminal of the battery pack. The internal FET switch
connects this terminal to GND
Ground, connect the negative terminal of the battery to this pin
Power Supply
Exposed pad，please connect with GND of XB8089D
ABSOLUTE MAXIMUM RATINGS
(Note: Do not exceed these limits to prevent damage to the device. Exposure to absolute maximum rating
conditions for long periods may affect device reliability.)
PARAMETER
VALUE
UNIT
VDD input pin voltage
VM input pin voltage
Operating Ambient Temperature
XySemi Inc
-2-
-0.3 to 6
-6 to 10
-40 to 85
V
V
°
C
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XB8089D
______________________________________ ____________________________________________________
____________________________
Maximum Junction Temperature
Storage Temperature
Lead Temperature ( Soldering, 10 sec)
Power Dissipation at T=25°
C
Package
Thermal Resistance (Junction to Ambient) θ
JA
Package Thermal Resistance (Junction to Case) θ
JC
ESD
125
-55 to 150
300
0.625
250
130
2000
°
C
°
C
°
C
W
°
C/W
°
C/W
V
ELECTRICAL CHARACTERISTICS
Typicals and limits appearing in normal type apply for TA = 25oC, unless otherwise specified
Parameter
Detection Voltage
4.2
Overcharge Detection Voltage
Overcharge Release Voltage
Overdischarge Detection Voltage
V
CU
4.05
V
CL
2.4
V
DL
2.9
Overdischarge Release Voltage
Detection Current
Overdischarge Current1 Detection
Overdischarge Current1 Recovery
Overdischarge Current 2 Detection
Load Short-Circuiting
Detection
Current Consumption
Current Consumption in Normal
Operation
Current Consumption in power
Down
VM Internal Resistance
Internal Resistance between
VM and V
DD
Internal Resistance between VM
and GND
FET on Resistance
Equivalent FET on Resistance
*R
SS(ON)
V
DD
=3.6V I
VM
=1.0A
20
m
Ω
*R
VMD
*R
VMS
VDD=2.0V
VM pin floating
V
DD
=3.6V
VM=1.0V
160
50
k
Ω
k
Ω
*I
IOV1
V
DD
=3.6V
10
6
15
40
A
uA
A
A
V
DR
3.0
3.1
V
2.5
2.6
V
4.10
4.15
V
4.25
4.3
V
Symbol
Test Condition
Min
Typ
Max
Unit
*I
ROV1
V
DD
=3.6V
*I
IOV2
V
DD
=3.6V
*I
SHORT
V
DD
=3.6V
I
OPE
I
PDN
V
DD
=3.6V
VM =0V
V
DD
=2.0V
VM pin floating
6
3
12
6
μ
A
μ
A
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-3-
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REV0.7
XB8089D
______________________________________ ____________________________________________________
____________________________
Over Temperature Protection
Over Temperature Protection
*T
SHD+
120
100
o
C
Over Temperature Recovery Degree *T
SHD-
Detection Delay Time
Overcharge Voltage Detection
Delay Time
t
CU
130
40
V
DD
=3.6V
V
DD
=3.6V
V
DD
=3.6V
10
0.4
75
200
60
mS
mS
mS
mS
uS
Overdischarge Voltage Detection
t
DL
Delay Time
Overdischarge Current 1 Detection *t
IOV1
Delay Time
Overdischarge Current 2 Detection *t
IOV2
Delay Time
Load Short-Circuiting Detection
Delay Time
*t
SHOR
T
Note: * ---
The parameter is guaranteed by design.
Figure 3. Functional Block Diagram
FUNCTIONAL DESCRIPTION
The XB8089D monitors the voltage and
current of a battery and protects it from
being damaged due to overcharge voltage,
overdischarge voltage, overdischarge
current, and short circuit conditions by
disconnecting the battery from the load
or charger. These functions are required in
XySemi Inc
-4-
order to operate the battery cell within
specified limits.
The device requires only one external
capacitor. The MOSFET is integrated and
its R
SS(ON)
is as low as 20mΩ typical.
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XB8089D
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____________________________
Normal operating mode
If no exception condition is detected,
charging and discharging can be carried
out freely. This condition is called the
normal operating mode.
Overcharge Condition
When the battery voltage becomes higher
than the overcharge detection voltage (V
CU
)
during charging under normal condition
and the state continues for the overcharge
detection delay time (t
CU
) or longer, the
XB8089D turns the charging control FET
off to stop charging. This condition is called
the overcharge condition. The overcharge
condition is released in the following two
cases:
1, When the battery voltage drops below
the overcharge release voltage (V
CL
), the
XB8089D turns the charging control FET
on and returns to the normal condition.
2, When a load is connected and
discharging starts, the XB8089D turns the
charging control FET on and returns to the
normal condition. The release mechanism
is as follows: the discharging current flows
through an internal parasitic diode of the
charging FET immediately after a load is
connected and discharging starts, and the
VM pin voltage increases about 0.7 V
(forward voltage of the diode) from the
GND pin voltage momentarily. The
XB8089D detects this voltage and releases
the overcharge condition. Consequently, in
the case that the battery voltage is equal to
or lower than the overcharge detection
voltage (V
CU
), the XB8089D returns to the
normal condition immediately, but in the
case the battery voltage is higher than the
overcharge detection voltage (V
CU
),the chip
does not return to the normal condition
until the battery voltage drops below the
overcharge detection voltage (V
CU
) even if
the load is connected. In addition, if the VM
pin voltage is equal to or lower than the
overcurrent detection voltage when a load
XySemi Inc
-5-
is connected and discharging starts, the
chip does not return to the normal
condition.
Remark
If the battery is charged to a voltage higher
than the overcharge detection voltage (V
CU
) and
the battery voltage does not drops below the
overcharge detection voltage (V
CU
) even when a
heavy load, which causes an overcurrent, is
connected, the overcurrent do not work until the
battery voltage drops below the overcharge
detection voltage (V
CU
). Since an actual battery has,
however, an internal impedance of several dozens
of mΩ , and the battery voltage drops immediately
after a heavy load which causes an overcurrent is
connected, the overcurrent work. Detection of load
short-circuiting works regardless of the battery
voltage.
Overdischarge Condition
When the battery voltage drops below the
overdischarge detection voltage (V
DL
)
during discharging under normal condition
and it continues for the overdischarge
detection delay time (t
DL
) or longer, the
XB8089D turns the discharging control
FET off and stops discharging. This
condition is called overdischarge condition.
After the discharging control FET is turned
off, the VM pin is pulled up by the
R
VMD
resistor
between VM and VDD in XB8089D.
Meanwhile when VM is bigger than 1.5
V (typ.) (the load short-circuiting detection
voltage), the current of the chip is reduced
to the power-down current (
I
PDN
). This
condition is called power-down condition.
The VM and VDD pins are shorted by the
R
VMD
resistor in the IC under the
overdischarge and power-down conditions.
The power-down condition is released
when a charger is connected and the
potential difference between VM and VDD
becomes 1.3 V (typ.) or higher (load short-
circuiting detection voltage). At this time,
the FET is still off. When the battery
voltage becomes the overdischarge
detection voltage (V
DL
) or higher (see note),
the XB8089D turns the FET on and
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