Xiner
Features
High frequency operation
Low stray inductance
High reliability and Power density
Low switching loss and Vcesat
XNG100B24TC1S5
1200V/100A IGBT Half-Bridge Module
Applications
Welding machine
UPS
Industry Inverter
Motor Control
34mm Half-Bridge Module
Circuit Diagram
Vces=1200v
Ic=100A@Tc=100℃
Package Outlines
（Unit：mm）
Shenzhen Invsemi Co., Ltd
Xiner
IGBT Absolute Max Ratings
Symbol
V
CES
I
C
I
CRM
P
total
V
GES
Parameter
Collector-to-Emitter Voltage
Continuous DC collector current
Repetitive peak collector current
Total power dissipation
Gate-Emitter peak voltage
Condition
T
VJ
=25
°C
TC = 100°C,T
VJ MAX
=150
°C
t
p
=1ms
TC = 25°C,T
VJ MAX
=150
°C
XNG100B24TC1S5
Units
V
A
A
°C/W
V
Maximum
1200
100
200
463
+/- 30
lGBT Characteristics
Symbol
Parameter
Test conditions
V
GE
=15V,
V
CE(sat)
Collector-Emitter Saturation
voltage
I
C
=100A,T
VJ
=25°C
V
GE
=15V,
I
C
=100A,T
VJ
=125°C
V
GE(th)
I
CES
I
GES
C
iss
C
rss
T
don
T
r
E
on
T
doff
T
f
E
off
I
SC
R
ThJC
T
VJ OP
Gate threshold voltage
Collector-Emitter leakage
current
Gate-Emitter leakage current
Input capacitance
Reverse transfer capacitance
Turn-on delay time, inductive
load
Rise time, inductive load
Turn-on energy loss per pulse
Turn-off delay time, inductive
load
Fall time, inductive load
Turn-off energy loss per pulse
Short- circuit current
Junction-Case Thermal
resistance
Temperature under switching
V
GE
= V
CE
, I
D
= 3.3mA
V
CE
=1200V,
V
GE
= 0V,T
VJ
=25°C
V
CE
=0V,V
GE
=20V,T
VJ
=25℃
V
GE
= 0V,V
CE
= 25V
T
VJ
=25°C,ƒ = 1MHz
V
GE
= 0V,V
CE
= 25V
T
VJ
=25°C,ƒ = 1MHz
V
CE
=600v, I
C
=100A
R
g
=10ohm, V
GE
= 15V
V
CE
=600v, I
C
=100A
R
g
=10ohm, V
GE
= 15V
V
CE
=600v, I
C
=100A
R
g
=10ohm, V
GE
= 15V
V
CE
=600v, I
C
=100A
R
g
=10ohm, V
GE
= 15V
V
CE
=600v, I
C
=100A
R
g
=10ohm, V
GE
= 15V
V
CE
=600v, I
C
=100A
R
g
=10ohm, V
GE
= 15V
T
a
=25°C,V
GE
=15V,
V
CE
=720V, t
P
=10us
Units
V
V
V
mA
nA
nF
nF
nS
ns
mJ
nS
nS
mJ
A
K/W
°C
Min.
—
—
5.2
—
—
—
—
—
—
—
—
—
—
—
—
-40
Typ.
1.90
2.15
-
—
—
6.9
0.3
40
80
9.5
240
385
10.2
500
—
Max.
2.2
—
6.8
1
100
—
—
—
—
—
—
—
—
—
0.27
150
Shenzhen Invsemi Co., Ltd
Xiner
FRD Absolute Max Ratings
Symbol
V
RRM
I
F
I
FRM
It
2
XNG100B24TC1S5
Parameter
Repetitive peak reverse voltage
Continuous DC forward current
Repetitive peak forward current
I t Value
2
Condition
T
VJ
=25
°C
Units
V
A
Maximum
1200
100
200
1580
T
p
=1ms
V
R
=0V,T
p
=10ms,T
VJ
=125
°C
A
As
2
FRD Characteristics
Symbol
Parameter
Test conditions
I
F
=100A,T
VJ
=25
°C
V
F
Forward voltage
I
F
=100A,T
VJ
=125
°C
I
RM
Q
r
T
rr
E
rec
I
RM
Q
r
T
rr
E
rec
R
ThJC
T
VJ OP
Peak reverse recovery current
Recovery charge
Reverse recovery energy
Reverse recovery energy
Peak reverse recovery current
Recovery charge
Reverse recovery energy
Reverse recovery energy
Junction-Case Thermal
Resistance
Temperature under switching
I
F
=100A,L=500uH，
Vdc=600v,V
GE
=15V,
R
g
=10ohm, T
VJ
=125
°C
nS
mJ
K/W
°C
—
—
—
-40
140
0.92
—
—
—
—
0.5
150
I
F
=100A,L=500uH，
Vdc=600v,V
GE
=15V,
R
g
=10ohm, T
VJ
=25
°C
nS
mJ
A
uC
—
—
—
—
120
0.71
62
4.5
—
—
—
—
V
A
uC
—
—
—
2.05
55
3.2
—
—
—
Units
V
Min.
—
Typ.
2.25
Max.
2.5
Shenzhen Invsemi Co., Ltd
嵌入式系统
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