Xiner
描述/Description
常全面的高性½逆变器输出平台。
技术信息
/ Technical Information
XNS15S92F6
智½功率模块
/ IPM
XNS15S92F6基于Trench FS-IGBT技术，是一款先进的DIP26 IPM，为交流感应、直流无刷电机和PMSM电机提供非
XNS15S92F6 is an Advanced DIP26 IPM Based on Trench FS-IGBT Technology, Providing a Fully-featured,
High-performance Inverter Output Stage for AC Induction, BLDC, and PMSM Motors.
XNS15S92F6综合优化了IGBT的栅极驱动以最小化电磁干扰和½量损耗，同时也提供多重保护特性，包括集成欠压闭
锁、过流保护、温度检测和故障报告。
XNS15S92F6 Optimized Gate Drive of the Built-in IGBTs to Minimize EMI and Losses, while also Providing Multiple
Protection Features Including Under-voltage Lockouts, Over-current Shutdown, Thermal Monitoring, Fault Reporting.
XNS15S92F6内½高速HVIC，提供无光耦单电源IGBT栅极驱动½力，进一步减小了逆变器系统设计的总½尺寸。
XNS15S92F6 Combines High Speed HVIC Provides Opto-Coupler-Less Single-Supply IGBT Gate Driving Capability
that Further Reduce the Overall Size of the Inverter System Design.
独立的IGBT负端在每个相½均有效，可支持大量不同种类的控制算法。
Separate Negative IGBT Terminals are Available for Each Phase to Support the Widest Variety of Control Algorithms.
主要特点
•
600V-15 A三相IGBT逆变器，
包含栅极驱动和保
护的控制IC
Features
•
600V-15A 3-Phase IGBT Inverter Bridge Including
Control ICs for Gate Driving and Protection
•
Low-Loss, Short-Circuit Rated IGBTs
•
Built-In Bootstrap Diodes with Current Limiting Resistor
•
Separate Open-Emitter Pins from Low-Side IGBTs for
Three-Phase Current Sensing
•
Built-In NTC Thermistor for Temperature Monitorin
•
DIP26 Package using IMS Structure, Al Substrate
exposed, Better Heat Dissipation
•
Isolation Rating: 2000 V
rms
/min
•
Single-Grounded Power Supply
•
Lead-free Terminal Plating; RoHS Compliant
•
½损耗、短路额定的IGBT
•
内½带限流电阻的自举二极管
•
½端IGBT的独立发射极开路引脚用于三相电流
感测
•
内½负温度系数的电阻用于温度检测
•
DIP26封装采用IMS架构，铝基板外露，散热½
力更½
•
绝缘级别2000V
rms
/1min
•
单接地电源供电
•
无铅工艺；符合ROHS
应用
•运动控制
–
家用设备
/
工业电机
Applications
•
Motion Control – Home Appliance / Industrial Motor
图1. 封装概览
Figure1. Package Overview
深圳芯½半导½技术有限公司
Http://www.invsemi.com
Datasheet
XNS15S92F6
技术信息
/ Technical Information
Xiner
引脚号/Pin
Number
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
XNS15S92F6
智½功率模块
/ IPM
引脚名/Pin
Name
VTH
RTH
P
U
V
W
N
U
N
V
N
W
C
SC
V
FO
IN(WL)
IN(VL)
IN(UL)
COM
VCC(L)
VCC(H)
IN(WH)
IN(VH)
IN(UH)
VS(W)
VB(W)
VS(V)
VB(V)
VS(U)
VB(U)
引脚描述/Pin
Description
Thermistor Bias Voltage
热敏电阻偏压
Series Resistor for the Use of Thermistor (Temperature Detection)
用于热敏电阻（温度检测）的串联电阻
Positive DC-Link Input
直流正端
Output for U-Phase
U相输出
Output for V-Phase
V相输出
Output for W-Phase
W相输出
Negative DC-Link Input for U-Phase
U相的直流环节负极
Negative DC-Link Input for V-Phase
V相的直流环节负极
Negative DC-Link Input for W-Phase
W相的直流环节负极
Capacitor (Low-Pass Filter) for Short-circuit Current Detection Input
短路电流感测输入电容（½通滤波器）
Fault Output
故障输出
Signal Input for Low-Side W-Phase
½端W相的信号输入
Signal Input for Low-Side V-Phase
½端V相的信号输入
Signal Input for Low-Side U-Phase
½端U相的信号输入
Common Supply Ground
电源（公共）地
Low-Side Common Bias Voltage for IC and IGBTs Driving
IC和IGBT驱动的½端公共偏压
High-Side Common Bias Voltage for IC and IGBTs Driving
IC和IGBT驱动的高端公共偏压
Signal Input for High-Side W-Phase
高端W相的信号输入
Signal Input for High-Side V-Phase
高端V相的信号输入
Signal Input for High-Side U-Phase
高端U相的信号输入
High-Side Bias Voltage Ground for W-Phase IGBT Driving
W相IGBT驱动的高端偏压的地
High-Side Bias Voltage for W-Phase IGBT Driving
W相IGBT驱动的高端偏压
High-Side Bias Voltage Ground for V-Phase IGBT Driving
V相IGBT驱动的高端偏压的地
High-Side Bias Voltage for V-Phase IGBT Driving
V相IGBT驱动的高端偏压
High-Side Bias Voltage Ground for U-Phase IGBT Driving
U相IGBT驱动的高端偏压的地
High-Side Bias Voltage for U-Phase IGBT Driving
U相IGBT驱动的高端偏压
深圳芯½半导½技术有限公司
Http://www.invsemi.com
Datasheet
XNS15S92F6
技术信息
/ Technical Information
Xiner
XNS15S92F6
智½功率模块
/ IPM
Typical Application Circuit
注/Note:
1.推荐在电源上加稳压二极管（24V/1W），防止浪涌电压损坏IPM。
It is recommended to insert a Zener diode (24V/1W) between each pair of control supply terminals to prevent surge destruction.
2.输入正逻辑，下拉电阻5.4KΩ。为了避免故障，应½可½缩短每个输入端的连线
（小于2-3
cm）。
Input logic is High-active. There is a 5.4KΩ pull down resistor. To avoid malfunction, the wiring of each input should be as short as possible
(less than 2-3cm).
3.为避免保护功½出错，应½可½缩短R
F
和C
SC
周围的连线。
To prevent errors of the protection function, the wiring of B, C and D point should be as short as possible.
4.在短路保护电路中，R
F
C
SC
的时间常数应在1.5
~ 2.0
μs
的范围内进行选择。
In the short-circuit protection circuit, please select the R
F
C
SC
time constant in the range 1.5 ~ 2.0
μs.
5.每个电容½应½可½地靠近产品的引脚安装。（C
SPC05
：温度特性½，频率特性½；C
SP05
：0.22u-2uF, 温度特性½，频率特性½）
Each capacitor should be mounted as close to the pins of the product as possible. (C
SPC05
: good temperature, frequency characteristic
electrolytic type and C
SP05
: 0.22u-2uF, good temperature, frequency and DC bias characteristic ceramic type are recommended.)
6.为防止浪涌的破坏，应½可½缩短滤波电容和P & GND
引脚间的连线。推荐在P
& GND
引脚间½用0.1
~ 0.22 μ F
的高频无感电容C
DCS
。
To prevent surge destruction, the wiring between the smoothing capacitor and the P & GND pins should be as short as possible. The use of a
high-frequency non-inductive C
DCS
capacitor of around 0.1 ~ 0.22
μF
between the P & GND pins is recommended.
深圳芯½半导½技术有限公司
Http://www.invsemi.com
Datasheet
XNS15S92F6
技术信息
/ Technical Information
Xiner
½廓封装详图
/ Detailed Package Outline Drawings
XNS15S92F6
智½功率模块
/ IPM
深圳芯½半导½技术有限公司
Http://www.invsemi.com
Datasheet
XNS15S92F6
能源基础设施
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