VSD050P10MS
-100V/-34A P-Channel Advanced Power MOSFET
Features
P-Channel，-5V Logic Level Control
Low on-resistance RDS(on) @ V
GS
=-4.5 V
Fast Switching and High efficiency
Enhancement mode
100% Avalanche Tested
Pb-free lead plating; RoHS compliant
V
DS
R
DS(on),TYP
@
V
GS
=-10 V
R
DS(on),TYP
@
V
GS
=-4.5V
I
D
-100
47
49
-34
V
mΩ
mΩ
A
TO-252
Part ID
VSD050P10MS
Package Type
TO-252
Marking
050P10M
Tape and reel information
2500PCS/Reel
Maximum ratings, at T
A
=25 ° unless otherwise specified
C,
Symbol
Parameter
Drain-Source breakdown voltage
Gate-Source voltage
Diode continuous forward current
C
T
C
=25°
C
T
C
=25°
Continuous drain current @V
GS
=-10V
Pulse drain current tested
①
Continuous drain current @VGS=-10V
T
A
=70°
C
EAS
Avalanche energy, single pulsed
②
Maximum power dissipation
Maximum power dissipation
③
Storage and Junction Temperature Range
C
T
C
=25°
T
A
=25°
C
-3
163
100
1.3
-55 to 175
A
mJ
W
W
°
C
C
T
C
=100°
C
T
C
=25°
T
A
=25°
C
I
DSM
Rating
-100
±
20
-34
-34
-24
-136
-3.8
Unit
V
V
A
A
A
A
A
V
(BR)DSS
V
GS
I
S
I
D
I
DM
P
D
P
DSM
T
STG
,
T
J
Thermal Characteristics
R
JC
R
JA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
1.5
100
°
C/W
°
C/W
Copyright Vanguard Semiconductor Co., Ltd
Rev B – JUL, 2018
www.vgsemi.com
VSD050P10MS
-100V/-34A P-Channel Advanced Power MOSFET
Typical Characteristics
Symbol
Parameter
Condition
Min.
Typ.
Max.
Unit
Static Electrical Characteristics @ T
J
= 25° (unless otherwise stated)
C
V
(BR)DSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
V
GS
=0V, I
D
=-250μA
V
DS
=-100V,V
GS
=0V
V
DS
=-100V,V
GS
=0V
V
GS
=±
20V,V
DS
=0V
V
DS
=V
GS
,I
D
=-250μA
V
GS
=-10V, I
D
=-20A
V
GS
=-4.5V, I
D
=-10A
-100
--
--
--
-1.3
--
--
--
--
--
--
-1.6
47
49
--
-1
-100
±
100
-2.5
61
62
V
μA
μA
nA
V
mΩ
mΩ
I
DSS
Zero Gate Voltage Drain Current(Tj=125℃)
I
GSS
V
GS(TH)
R
DS(ON)
R
DS(ON)
Gate-Body Leakage Current
Gate Threshold Voltage
Drain-Source On-State Resistance
④
Drain-Source On-State Resistance
④
Dynamic Electrical Characteristics @ T
J
= 25° (unless otherwise stated)
C
C
iss
C
oss
C
rss
Q
g
(10V)
Q
g
(4.5V)
Q
gs
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DS
=-50V,I
D
=-20A,
V
GS
=-10V
V
DS
=-30V,V
GS
=0V,
f=1MHz
4345
155
120
--
--
--
--
5110
180
140
85
49
17
20
5875
205
160
--
--
--
--
pF
pF
pF
nC
nC
nC
nC
Q
gd
Switching Characteristics
t
d(on)
Turn-on Delay Time
V
DD
=-50V,
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
I
D
=-20A,
R
G
=3.0Ω,
V
GS
=-10V
--
--
--
--
19.5
22
85.5
39
--
--
--
--
ns
ns
ns
ns
t
r
t
d(off)
t
f
Source- Drain Diode Characteristics@ T
J
= 25° (unless otherwise stated)
C
V
SD
t
rr
Q
rr
NOTE
:
Forward on voltage
Reverse Recovery Time
Reverse Recovery Charge
I
SD
=-20A,V
GS
=0V
T
j
=25℃,I
sd
=-20A,
V
GS
=0V
di/dt=-500A/μs
--
--
--
-0.9
29
167
-1.2
--
--
V
ns
nC
①
Repetitive rating; pulse width limited by max junction temperature.
②
Limited by T
Jmax
, starting T
J
= 25° L = 0.5mH, R
G
= 25
Ω
, I
AS
=-20A, V
GS
=-10V. Part not recommended for use above this value
C,
③
The power dissipation P
DSM
is based on R
θJA
and the maximum allowed junction temperature of 150°
C.
④
Pulse width ≤ 300μs; duty cycle≤ 2%.
Copyright Vanguard Semiconductor Co., Ltd
Rev B – JUL, 2018
www.vgsemi.com
VSD050P10MS
-100V/-34A P-Channel Advanced Power MOSFET
Typical Characteristics
-VGS(TH), Gate -Source Voltage (V)
-VDS,- Drain -Source Voltage (V)
Fig1.
Typical Output Characteristics
-ID, -Drain-Source Current (A)
Tj - Junction Temperature (°
C)
Fig2.
-V
GS(TH)
Gate -Source Voltage Vs.Tj
Tc - Case Temperature (°
C)
Fig2.
Maximum Drain Current Vs.Case Temperature
-ID, -Drain-Source Current (A)
-VGS, -Gate -Source Voltage (V)
Fig3.
Typical Transfer Characteristics
Normalized On Resistance
Tj - Junction Temperature (°
C)
Fig4.
Normalized On-Resistance Vs. Tj
-ISD, -Reverse Drain Current (A)
-VSD, -Source-Drain Voltage (V)
Fig5.
Typical Source-Drain Diode Forward Voltage
Copyright Vanguard Semiconductor Co., Ltd
Rev B – JUL, 2018
-ID,- Drain Current (A)
-VDS, -Drain -Source Voltage (V)
Fig6.
Maximum Safe Operating Area
www.vgsemi.com
VSD050P10MS
-100V/-34A P-Channel Advanced Power MOSFET
Typical Characteristics
-VGS, -Gate-Source Voltage (V)
-VDS , -Drain-Source Voltage (V)
Fig7.
Typical Capacitance Vs.Drain-Source Voltage
C, Capacitance (pF)
Qg -Total Gate Charge (nC)
Fig8.
Typical Gate Charge Vs.Gate-Source Voltage
ZθJC Normalized Transient
Thermal Resistance
Pulse Width (s)
Fig9.
Normalized Maximum Transient Thermal Impedance
Fig9.
Threshold Voltage Vs. Temperature
Fig10.
Unclamped Inductive Test Circuit and Waveforms
Fig11.
Switching Time Test Circuit and waveforms
Copyright Vanguard Semiconductor Co., Ltd
Rev B – JUL, 2018
www.vgsemi.com
VSD050P10MS
-100V/-34A P-Channel Advanced Power MOSFET
Marking Information
Vs
050P10M
XXXYWW
1st line：
2nd line：
3rd line：
Vanguard Code（Vs） Vanguard Logo
，
Part Number（050P10M）
Date code
（XXXYWW）
XXX： Wafer Lot Number
Y： Year Code， e.g. E means 2017
WW： Week Code
Copyright Vanguard Semiconductor Co., Ltd
Rev B – JUL, 2018
www.vgsemi.com
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