VS3640DS
30V/9A Dual N-Channel Advanced Power MOSFET
Features
Dual N-Channel，5V Logic Level Control
Enhancement mode
Fast Switching
High Effective
Pb-free lead plating; RoHS compliant; Halogen-Free
V
DS
R
DS(on),TYP
@
V
GS
=10 V
R
DS(on),TYP
@
V
GS
=4.5 V
I
D
30
16
24
9
SOP8
V
mΩ
mΩ
A
Part ID
VS3640DS
Package Type
SOP8
Marking
3640DS
Tape and reel
information
3000pcs/reel
Maximum ratings, at
T
j
=25 °C, unless otherwise specified
Symbol
Parameter
Drain-Source breakdown voltage
Diode continuous forward current
Rating
30
Unit
V
A
A
A
A
mJ
W
V
V
(BR)DSS
I
S
T
A
=25°C
T
A
=25°C
2.3
9
5.7
36
9
I
D
I
DM
EAS
Continuous drain current @V
GS
=10V
T
A
=100°C
Pulse drain current tested
①
Avalanche energy, single pulsed
②
Maximum power dissipation
Gate-Source voltage
T
A
=25°C
P
D
V
GS
MSL
T
A
=25°C
2
±20
Level 3
T
STG
Storage temperature range
-55 to 150
°C
Thermal Characteristics
Symbol
R
θJL
Parameter
Thermal Resistance-Junction to Lead
Thermal Resistance-Junction to Ambient
Typical
40
62.5
Unit
°C/W
°C/W
R
θ
JA
Copyright Vanguard Semiconductor Co., Ltd
Rev B – APR, 2018
www.vgsemi.com
VS3640DS
30V/9A Dual N-Channel Advanced Power MOSFET
Typical Electrical Characteristics
Symbol
Parameter
Condition
Min.
Typ.
Max.
Unit
Static Electrical Characteristics @ T
J
= 25°C (unless otherwise stated)
V
(BR)DSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current(Tc=25℃)
V
GS
=0V, I
D
=250μA
V
DS
=30V,V
GS
=0V
V
DS
=30V,V
GS
=0V
V
GS
=±20V,V
DS
=0V
V
DS
=V
GS
,I
D
=250μA
V
GS
=10V, I
D
=8A
V
GS
=4.5V, I
D
=4A
30
--
--
--
1
--
--
--
--
--
--
1.9
16
24
--
1
100
±100
2.5
19
29
V
μA
μA
nA
V
mΩ
mΩ
I
DSS
Zero Gate Voltage Drain Current(Tc=125℃)
I
GSS
V
GS(TH)
R
DS(ON)
R
DS(ON)
Gate-Body Leakage Current
Gate Threshold Voltage
Drain-Source On-State Resistance
②
Drain-Source On-State Resistance
②
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise stated)
C
iss
C
oss
C
rss
R
g
Q
g
Q
gs
Q
gd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DS
=15V,I
D
=8A,
V
GS
=10V
f=1MHz
V
DS
=15V,V
GS
=0V,
f=1MHz
--
--
--
--
--
--
--
455
75
60
3.3
11
3
4
--
--
--
--
--
--
--
pF
pF
pF
Ω
nC
nC
nC
Switching Characteristics
t
d(on)
Turn-on Delay Time
V
DD
=15V,
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
I
D
=8A,
R
G
=3Ω,
V
GS
=10V
--
--
--
--
7
10
22
7
--
--
--
--
nS
nS
nS
nS
t
r
t
d(off)
t
f
Source- Drain Diode Characteristics@ T
J
= 25°C (unless otherwise stated)
V
SD
t
rr
Q
rr
NOTE:
Forward on voltage
Reverse Recovery Time
Reverse Recovery Charge
I
SD
=8A,V
GS
=0V
T
j
=25℃,I
sd
=8A,
V
GS
=0V
di/dt=500A/μs
--
--
0.9
9.5
11.8
1.2
--
V
nS
nC
①
Repetitive rating; pulse width limited by max. junction temperature.
②
Limited by T
Jmax
, starting T
J
= 25°C, L = 0.5mH,R
G
= 25
Ω
, I
AS
= 6A, V
GS
=10V. Part not recommended for use above this value
③
Pulse width
≤ 300μs; duty cycle≤ 2%.
Copyright Vanguard Semiconductor Co., Ltd
Rev B – APR, 2018
www.vgsemi.com
VS3640DS
30V/9A Dual N-Channel Advanced Power MOSFET
Typical Characteristics
V
DS
, Drain -Source Voltage (V)
Fig1.
Typical Output Characteristics
V
GS(TH)
, Gate -Source Voltage (V)
I
D
, Drain-Source Current (A)
Tj - Junction Temperature (°C)
Fig2.
Threshold Voltage Vs. Temperature
I
D
, Drain-Source Current (A)
V
GS
, Gate -Source Voltage (V)
Fig3.
Typical Transfer Characteristics
Normalized On Resistance
Tj - Junction Temperature (°C)
Fig4.
Normalized On-Resistance Vs. Temperature
I
SD
, Reverse Drain Current (A)
V
SD
, Source-Drain Voltage (V)
Fig5.
Typical Source-Drain Diode Forward Voltage
Copyright Vanguard Semiconductor Co., Ltd
Rev B – APR, 2018
I
D
- Drain Current (A)
V
DS
, Drain -Source Voltage (V)
Fig6.
Maximum Safe Operating Area
www.vgsemi.com
VS3640DS
30V/9A Dual N-Channel Advanced Power MOSFET
Typical Characteristics
V
GS
, Gate-Source Voltage (V)
V
DS
, Drain-Source Voltage (V)
Fig7.
Typical Capacitance Vs.Drain-Source Voltage
C, Capacitance (pF)
Qg -Total Gate Charge (nC)
Fig8.
Typical Gate Charge Vs.Gate-Source Voltage
Transient Thermal Resistance
r(t) , Normalized Effective
T1, Square Wave Pulse Duration(sec)
Fig9.
T1 ,Transient Thermal Response Curve
Fig10.
Unclamped Inductive Test Circuit and
waveforms
Fig11.
Switching Time Test Circuit and waveforms
Copyright Vanguard Semiconductor Co., Ltd
Rev B – APR, 2018
www.vgsemi.com
VS3640DS
30V/9A Dual N-Channel Advanced Power MOSFET
Marking Information
，Company
Logo
1
st
line： Company Code（Vs）
2
nd
line：Part Number（3640DS）
3
rd
line：Date code
（XXXYWW）
LOT：Wafer Lot Number
Y：Year Code，e.g. E means 2017
WW：Week Code
Copyright Vanguard Semiconductor Co., Ltd
Rev B – APR, 2018
www.vgsemi.com
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