30V N+P Channel Advanced Power MOSFET
VSO025C03MC
Features
N+P Channel
Enhancement mode
Low on-resistance
R
DS(on)
@
V
GS
=±4.5 V
Fast Switching
Pb-free lead plating; RoHS compliant
V
DS
R
DS(on),TYP
@
V
GS
=±10 V
R
DS(on),TYP
@
V
GS
=±4.5V
I
D
30
15
23
10
-30
23
38
-8
SOP8
V
mΩ
mΩ
A
Part ID
VSO025C03MC
Package Type
SOP8
Marking
025C03MC
Tape and reel
information
3000pcs/Reel
Maximum ratings, at
T
A
=25°C, unless otherwise specified
Rating
Symbol
Parameter
Drain-Source breakdown voltage
Diode continuous forward current
NMOS
30
PMOS
-30
-1.6
-8
-5
-32
33
2
±20
Unit
V
A
A
A
A
mJ
W
V
V
(BR)DSS
I
S
T
A
=25°C
T
A
=25°C
1.6
10
6
40
14
I
D
I
DM
EAS
Continuous drain current @VGS=±10V
T
A
=100°C
Pulse drain current tested
①
Avalanche energy, single pulsed
②
Maximum power dissipation
Gate-Source voltage
T
A
=25°C
P
D
V
GS
MSL
T
A
=25°C
2
±20
Level 3
T
STG
T
J
Storage and operating temperature range
-55 to 150
-55 to 150
°C
Thermal Characteristics
Symbol
R
θJL
R
θJA
Parameter
Thermal Resistance-Junction to Lead
Thermal Resistance-Junction to Ambient
Typical
40
62.5
Unit
°C/W
°C/W
Copyright Vanguard Semiconductor Co., Ltd
Rev B – APR, 2018
www.vgsemi.com
30V N+P Channel Advanced Power MOSFET
VSO025C03MC
N-Channel Electrical Characteristics
Symbol
Parameter
Condition
Min
Typ
Max
Unit
Static Electrical Characteristics @ T
J
= 25°C (unless otherwise stated)
V
(BR)DSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current(
T
A
=25℃)
V
GS
=0V, I
D
=250μA
V
DS
=30V,V
GS
=0V
V
DS
=30V,V
GS
=0V
V
GS
=±20V,V
DS
=0V
V
DS
=V
GS
,I
D
=250μA
V
GS
=10V, I
D
=8A
30
--
--
--
1.3
--
--
--
--
--
--
1.9
15
23
--
1
100
±100
2.4
19
29
V
μA
μA
nA
V
mΩ
mΩ
I
DSS
I
GSS
V
GS(TH)
R
DS(ON)
Zero Gate Voltage Drain Current(
T
A
=125℃)
Gate-Body Leakage Current
Gate Threshold Voltage
Drain-Source On-State Resistance
③
V
GS
=4.5V, I
D
=4A
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise stated)
C
iss
C
oss
C
rss
R
g
Q
g
Q
gs
Q
gd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate Source Charge
Gate Drain Charge
V
DS
=15V,I
D
=8A,
V
GS
=10V
f=1MHz
V
DS
=15V,V
GS
=0V,
f=1MHz
350
460
75
60
550
130
110
--
--
--
--
pF
pF
pF
Ω
nC
nC
nC
--
--
--
--
4.8
11.3
3
4.3
Switching Characteristics
t
d(on)
Turn on Delay Time
V
DD
=15V,
Turn on Rise Time
Turn Off Delay Time
Turn Off Fall Time
I
D
=8A,
R
G
=3Ω,
V
GS
=10V
--
--
-
--
7
10
22
7
--
--
--
--
nS
nS
nS
nS
t
r
t
d(off)
t
f
Source Drain Diode Characteristics
V
SD
t
rr
Q
rr
NOTE:
Forward on voltage
Reverse Recovery Time
Reverse Recovery Charge
I
SD
=8A,V
GS
=0V
T
j
=25℃,I
sd
=8A,
V
GS
=0V
di/dt=500A/μs
--
--
--
0.9
9.5
11.8
1.2
--
--
V
nS
nC
①
Repetitive rating; pulse width limited by max. junction temperature.
②
Limited by T
Jmax
, starting T
J
= 25°C, L = 0.5mH,R
G
= 25
Ω
, I
AS
= 6A, V
GS
=10V. Part not recommended for use above this value
③
Pulse width
≤ 300μs; duty cycle≤
2%.
Copyright Vanguard Semiconductor Co., Ltd
Rev B – APR, 2018
www.vgsemi.com
30V N+P Channel Advanced Power MOSFET
VSO025C03MC
P-Channel Electrical Characteristics
Symbol
Parameter
Condition
Min
Typ
Max
Unit
Static Electrical Characteristics @ T
J
= 25°C (unless otherwise stated)
V
(BR)DSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current(
T
A
=25℃)
Zero Gate Voltage Drain Current(
T
A
=125℃)
Gate-Body Leakage Current
Gate Threshold Voltage
V
GS
=0V, I
D
=-250μA
V
DS
=-30V,V
GS
=0V
V
DS
=-30V,V
GS
=0V
V
GS
=±20V,V
DS
=0V
V
DS
=V
GS
,I
D
=-250μA
V
GS
=-10V, I
D
=-8A
-30
--
--
--
-1.3
--
--
--
--
--
--
-1.9
23
38
--
-1
-100
±100
-2.4
29
47
V
μA
μA
nA
V
mΩ
mΩ
I
DSS
I
GSS
V
GS(TH)
R
DS(ON)
Drain-Source On-State Resistance
③
V
GS
=-4.5V, I
D
=-4A
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise stated)
C
iss
C
oss
C
rss
R
g
Q
g
Q
gs
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate Source Charge
Gate Drain Charge
VDS=-15V,ID=-8A,
VGS=-10V
f=1MHz
VDS=-15V,VGS=0V,
f=1MHz
760
60
30
--
--
--
--
860
140
95
10.6
19
4.3
6.5
960
200
150
--
--
--
--
pF
pF
pF
Ω
nC
nC
nC
Q
gd
Switching Characteristics
t
d(on)
Turn on Delay Time
VDD=-15V,
Turn on Rise Time
Turn Off Delay Time
Turn Off Fall Time
ID=-8A,
RG=3Ω,
VGS=-10V
--
--
-
--
6
5
25
7
--
--
--
--
ns
ns
ns
ns
t
r
t
d(off)
t
f
Source Drain Diode Characteristics
V
SD
t
rr
Q
rr
NOTE:
Forward on voltage
Reverse Recovery Time
Reverse Recovery Charge
I
SD
=-8A,V
GS
=0V
T
j
=25℃,Isd=-8A,
VGS=0V
di/dt=-500A/μs
--
--
--
-0.9
7
6.3
-1.2
--
--
V
nS
nC
①
Repetitive rating; pulse width limited by max. junction temperature.
②
Limited by T
Jmax
, starting T
J
= 25°C, L = 0.5mH, R
G
= 25
Ω
, I
AS
= -9A, V
GS
=-10V. Part not recommended for use above this value
③
Pulse width
≤ 300μs; duty
cycle≤
2%.
Copyright Vanguard Semiconductor Co., Ltd
Rev B – APR, 2018
www.vgsemi.com
30V N+P Channel Advanced Power MOSFET
VSO025C03MC
N-Channel Typical Characteristics
VDS, Drain -Source Voltage (V)
Fig1.
Typical Output Characteristics
VGS(TH), Gate -Source Voltage (V)
ID, Drain-Source Current (A)
Tj - Junction Temperature (°C)
Fig2.
V
GS(TH)
Gate -Source Voltage
Vs.
Tj
ID, Drain-Source Current (A)
VGS, Gate -Source Voltage (V)
Fig3.
Typical Transfer Characteristics
Normalized On Resistance
Tj - Junction Temperature (°C)
Fig4.
Normalized On-Resistance Vs. Tj
ISD, Reverse Drain Current (A)
VSD, Source-Drain Voltage (V)
Fig5.
Typical Source-Drain Diode Forward Voltage
ID - Drain Current (A)
VDS, Drain -Source Voltage (V)
Fig6.
Maximum Safe Operating Area
Copyright Vanguard Semiconductor Co., Ltd
Rev B – APR, 2018
www.vgsemi.com
30V N+P Channel Advanced Power MOSFET
VSO025C03MC
N-Channel Typical Characteristics
VDS , Drain-Source Voltage (V)
Fig7.
Typical Capacitance Vs.Drain-Source Voltage
VGS, Gate-Source Voltage (V)
C, Capacitance (pF)
Qg -Total Gate Charge (nC)
Fig8.
Typical Gate Charge Vs.Gate-Source Voltage
ZqJA Normalized Transient
Thermal Resistance)
Pulse Width (s)
Fig 9
.Normalized Maximum Transient Thermal Impedance
Fig10.
Unclamped Inductive Test Circuit and waveforms
Fig11.
Switching Time Test Circuit and waveforms
Copyright Vanguard Semiconductor Co., Ltd
Rev B – APR, 2018
www.vgsemi.com
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