VS4410AT
100V/110A N-Channel Advanced Power MOSFET
Features
Low On-Resistance
Fast Switching
100% Avalanche Tested
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Description
VS4410AT designed by the trench processing
techniques to achieve extremely low on-resistance.
Additional features of this design are a 175°
C
junction operating temperature, fast switching speed
and improved repetitive avalanche rating . These
features combine to make this design an extremely
efficient and reliable device for use in Motor
applications and a wide variety of other applications.
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only;and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to
absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are
measured under board mounted and still air conditions. Ambient temperature (TA) is 25° unless otherwise specified.
C,
Symbol
Parameter
Rating
Unit
Common Ratings (T
C
=25° Unless Otherwise Noted)
C
V
GS
Gate-Source Voltage
Drain-Source Breakdown Voltage
Maximum Junction Temperature
Storage Temperature Range
Maxium Diode Continuous Forward Current
C
T
C
=25°
±
20
100
175
-55 to 175
110
V
V
°
C
°
C
A
V
(BR)DSS
T
J
T
STG
I
S
Mounted on Large Heat Sink
I
DM
Pulse Drain Current Tested
①
Continuous Drain current@V
GS
=10V
Maximum Power Dissipation
Thermal Resistance-Junction to Case
Thermal Resistance Junction-Ambient
C
T
C
=25°
C
T
C
=25°
C
T
C
=25°
370
110
250
0.58
62.5
A
A
W
°
C/W
°
C/W
I
D
P
D
R
JC
R
JA
Drain-Source Avalanche Ratings
EAS
Avalanche Energy, Single Pulsed
②
900
mJ
Copyright Vanguard Semiconductor Co., Ltd
Rev. B – OCT, 2017
-1-
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VS4410AT
100V/110A N-Channel Advanced Power MOSFET
Symbol
Parameter
Condition
Min.
Typ.
Max.
Unit
Static Electrical Characteristics @ T
J
= 25° (unless otherwise stated)
C
V
(BR)DSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current(Tc=25℃)
V
GS
=0V I
D
=250μA
V
DS
=100V,V
GS
=0V
V
DS
=100V,V
GS
=0V
V
GS
=±
20V,V
DS
=0V
V
DS
=V
GS
,I
D
=250μA
V
GS
=10V, I
D
=60A
100
--
--
--
2
--
110
--
--
--
--
6.5
--
1
100
±
100
4
8
V
μA
μA
nA
V
mΩ
I
DSS
Zero Gate Voltage Drain Current(Tc=125℃)
I
GSS
V
GS(TH)
R
DS(ON)
Gate-Body Leakage Current
Gate Threshold Voltage
Drain-Source On-State Resistance③
Dynamic Electrical Characteristics @ T
J
= 25° (unless otherwise stated)
C
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DS
=50V,I
D
=75A,
V
GS
=10V
V
DS
=50V,V
GS
=0V,
f=1MHz
--
--
--
--
--
--
6050
560
205
120
26
30
--
--
--
--
--
--
pF
pF
pF
nC
nC
nC
Switching Characteristics
t
d(on)
Turn-on Delay Time
V
DD
=60V,
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
I
D
=30A,
R
G
=2.8Ω,
V
GS
=10V
--
--
--
--
21
50
46
60
--
--
--
--
nS
nS
nS
nS
t
r
t
d(off)
t
f
Source- Drain Diode Characteristics@ T
J
= 25° (unless otherwise stated)
C
I
SD
V
SD
t
rr
Q
rr
NOTE:
Source-drain current(Body Diode)
Forward on voltage
Reverse Recovery Time
Reverse Recovery Charge
T
c
=25℃
I
SD
=50A,V
GS
=0V
T
j
=25℃,I
sd
=75A,
V
GS
=0V
di/dt=100A/μs
--
--
--
--
0.86
50
105
110
1.3
--
A
V
nS
nC
①
Pulse width ≤ 300μs; duty cycle≤ 2%; pulse width limited by max. junction temperature.
②Limited
by TJmax, starting T
J
= 25° L = 0.5mH,RG = 25Ω, IAS =50A, VGS =10V.
C,
Copyright Vanguard Semiconductor Co., Ltd
Rev. B – OCT, 2017
-2-
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VS4410AT
100V/110A N-Channel Advanced Power MOSFET
Typical Characteristics
I
D
, Drain-Source Current (A)
V
DS
, Drain -Source Voltage (V)
Fig1.
Typical Output Characteristics
I
D
, Drain-Source Current (A)
Tc - Case Temperature (°
C)
Fig2.
Maximum Drain Current Vs.Case Temperature
I
D
, Drain-Source Current (A)
V
GS
, Gate -Source Voltage (V)
Fig3.
Typical Transfer Characteristics
Normalized On Resistance
Tj - Junction Temperature (°
C)
Fig4.
Normalized On-Resistance Vs. Temperature
Rdon,On Resistance (m
Ω
)
V
GS
, Gate -Source Voltage (V)
Fig5.
Typical
On-Resistance
Vs.
Gate -Source Voltage
Copyright Vanguard Semiconductor Co., Ltd
Rev. B – OCT, 2017
I
D
- Drain Current (A)
V
DS
, Drain -Source Voltage (V)
Fig6.
Maximum Safe Operating Area
-3-
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VS4410AT
100V/110A N-Channel Advanced Power MOSFET
I
SD
, Reverse Drain Current (A)
V
SD
, Source-Drain Voltage (V)
Fig7.
Typical Source-Drain Diode Forward Voltage
V
GS
, Gate-Source Voltage (V)
Qg -Total Gate Charge (nC)
Fig8.
Typical Gate Charge Vs.Gate-Source Voltage
V
GS(TH)
, Gate -Source Voltage (V)
Tj - Junction Temperature (°
C)
Fig9.
Threshold Voltage Vs. Temperature
C, Capacitance (pF)
V
DS
, Drain-Source Voltage (V)
Fig10.
Typical Capacitance Vs.Drain-Source Voltage
Fig11.
Unclamped Inductive Test Circuit and waveforms
Fig12.
Switching Time Test Circuit and waveforms
Copyright Vanguard Semiconductor Co., Ltd
Rev. B – OCT, 2017
-4-
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VS4410AT
100V/110A N-Channel Advanced Power MOSFET
TO-220AB Package Outline Data
Symbol
Dimensions (unit: mm)
Min
Typ
Max
A
A1
A2
b
b2
c
D
D1
DEP
E
E1
E2
ΦP1
e
e1
H1
L
L1
L2
ΦP
Q
θ1
θ2
4.30
1.15
2.20
0.70
1.17
0.45
15.30
9.00
0.05
9.66
-
9.80
1.40
4.52
1.30
2.40
0.80
1.32
0.50
15.65
9.20
0.10
9.90
8.70
10.00
1.50
2.54 BSC
5.08 BSC
4.70
1.40
2.60
1.00
1.50
0.61
15.90
9.40
0.25
10.28
-
10.20
1.60
6.40
12.70
-
2.40
3.53
2.70
5゜
1゜
6.50
-
-
2.50
3.60
2.80
7゜
3゜
6.80
14.27
3.95
2.60
3.70
2.90
9゜
5゜
Notes:
1. Refer to JEDEC TO-220 variation AB
2. Dimension "D" and "E" do NOT include mold flash. Mold flash shall not exceed 0.127mm per side.
Customer Service
Sales and Service:
sales@vgsemi.com
Vanguard Semiconductor CO., LTD
TEL:
(86-755) -26902410
FAX:
(86-755) -26907027
WEB:
www.vgsemi.com
Copyright Vanguard Semiconductor Co., Ltd
Rev. B – OCT, 2017
-5-
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