VS5810AS
55V/15A N-Channel Advanced Power MOSFET
Features
N-Channel，5V Logic Level Control
V
DS
R
DS(on),TYP
@
V
GS
=10 V
R
DS(on),TYP
@
V
GS
=4.5 V
55
6.8
9.5
15
V
mΩ
mΩ
A
Enhancement mode
Very low on-resistance
R
DS(on)
@
V
GS
=4.5 V
VitoMOS Technology
100% Avalanche test
Pb-free lead plating; RoHS compliant
®
I
D
SOP8
Part ID
VS5810AS
Package Type
SOP8
Marking
5810AS
Tape and reel
information
3000PCS/Reel
Maximum ratings, at
T
A
=25°C, unless otherwise specified
Symbol
Parameter
Drain-Source breakdown voltage
Diode continuous forward current
Rating
55
Unit
V
A
A
A
A
mJ
W
V
V
(BR)DSS
I
S
T
A
=25°C
T
A
=25°C
3
15
9.5
60
196
I
D
I
DM
EAS
Continuous drain current@VGS=10V
T
A
=100°C
Pulse drain current tested
①
Avalanche energy, single pulsed
②
Maximum power dissipation
Gate-Source voltage
T
A
=25°C
P
D
V
GS
MSL
T
A
=25°C
3.1
±20
Level 3
T
STG
T
J
Storage and operating temperature range
-55 to 150
°C
Thermal Characteristics
Symbol
R
θ
JC
R
θ
JA
Parameter
Thermal Resistance-Junction to Case
Thermal Resistance Junction-Ambient
Typical
24
40
Unit
°C/W
°C/W
Copyright Vanguard Semiconductor Co., Ltd
Rev B – MAY, 2018
www.vgsemi.com
VS5810AS
55V/15A N-Channel Advanced Power MOSFET
Symbol
Parameter
Condition
Min.
Typ.
Max.
Unit
Static Electrical Characteristics @ T
j
=25°C (unless otherwise stated)
V
(BR)DSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
V
GS
=0V I
D
=250μA
V
DS
=55V,V
GS
=0V
V
DS
=55V,V
GS
=0V
V
GS
=±20V,V
DS
=0V
V
DS
=V
GS
,I
D
=250μA
V
GS
=10V, I
D
=10A
V
GS
=4.5V, I
D
=5A
55
--
--
--
1.0
--
--
--
--
--
--
2.0
6.8
9.5
--
0.1
100
±100
3.0
9.0
12.0
V
μA
μA
nA
V
mΩ
mΩ
I
DSS
Zero Gate Voltage Drain Current(
T
j
=125℃)
I
GSS
V
GS(TH)
R
DS(ON)
R
DS(ON)
Gate-Body Leakage Current
Gate Threshold Voltage
Drain-Source On-State Resistance③
Drain-Source On-State Resistance③
Dynamic Electrical Characteristics @ T
j
= 25°C (unless otherwise stated)
C
iss
C
oss
C
rss
R
g
Q
g
Q
gs
Q
gd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DS
=30V,I
D
=5A,
V
GS
=10V
f=1MHz
V
DS
=30V,V
GS
=0V,
f=1MHz
--
--
--
--
--
--
--
1545
155
130
1.6
33
6.6
11.5
--
--
--
--
--
--
--
pF
pF
pF
Ω
nC
nC
nC
Switching Characteristics
t
d(on)
Turn-on Delay Time
V
DD
=30V,
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
I
D
=5A,
R
G
=6.8Ω,
V
GS
=10V
--
--
--
--
9.5
7
42
6
--
--
--
--
nS
nS
nS
nS
t
r
t
d(off)
t
f
Source- Drain Diode Characteristics@ T
j
= 25°C (unless otherwise stated)
V
SD
t
rr
Q
rr
NOTE:
Forward on voltage
Reverse Recovery Time
Reverse Recovery Charge
I
SD
=10A,V
GS
=0V
T
j
=25℃,I
sd
=5A,
V
GS
=0V
di/dt=200A/μs
--
--
0.77
38
79
1.0
--
V
nS
nC
①
Repetitive rating; pulse width limited by max. junction temperature.
②
Limited by T
Jmax
, starting T
J
= 25°C, L = 0.5mH,R
G
= 25
Ω
, I
AS
= 28A, V
GS
=10V. Part not recommended for use above this value
③
Pulse width
≤ 300μs; duty cycle≤ 2%.
Copyright Vanguard Semiconductor Co., Ltd
Rev B – MAY, 2018
www.vgsemi.com
VS5810AS
55V/15A N-Channel Advanced Power MOSFET
Typical Characteristics
VDS, Drain -Source Voltage (V)
Fig1.
Typical Output Characteristics
VGS(TH), Gate -Source Voltage (V)
ID, Drain-Source Current (A)
Tj - Junction Temperature (°C)
Fig2.
V
GS(TH)
Gate -Source Voltage Vs.Tj
ID, Drain-Source Current (A)
VGS, Gate -Source Voltage (V)
Fig3.
Typical Transfer Characteristics
Normalized On Resistance
Tj - Junction Temperature (°C)
Fig4.
Normalized On-Resistance Vs. Tj
ISD, Reverse Drain Current (A)
VSD, Source-Drain Voltage (V)
Fig5.
Typical Source-Drain Diode Forward Voltage
ID - Drain Current (A)
VDS, Drain -Source Voltage (V)
Fig6.
Maximum Safe Operating Area
Copyright Vanguard Semiconductor Co., Ltd
Rev B – MAY, 2018
www.vgsemi.com
VS5810AS
55V/15A N-Channel Advanced Power MOSFET
Typical Characteristics
VGS, Gate-Source Voltage (V)
VDS , Drain-Source Voltage (V)
Fig7.
Typical Capacitance Vs.Drain-Source Voltage
C, Capacitance (pF)
Qg -Total Gate Charge (nC)
Fig8.
Typical Gate Charge Vs.Gate-Source Voltage
ZqJA Normalized Transient
Thermal Resistance
Pulse Width (s)
Fig9.
Normalized Maximum Transient Thermal Impedance
Fig10.
Unclamped Inductive Test Circuit and waveforms
Fig11.
Switching Time Test Circuit and waveforms
Copyright Vanguard Semiconductor Co., Ltd
Rev B – MAY, 2018
www.vgsemi.com
VS5810AS
55V/15A N-Channel Advanced Power MOSFET
Marking Information
Vs
5810AS
XXXYWW
，Company
Logo
1
st
line： Company Code（Vs）
2
nd
line：Part Number（5810AS）
3
rd
line：Date code
（XXXYWW）
XXX：Wafer Lot Number
Y：Year Code，e.g. E means 2017
WW：Week Code
Copyright Vanguard Semiconductor Co., Ltd
Rev B – MAY, 2018
www.vgsemi.com
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