VSP007N07MS
80V/65A N-Channel Advanced Power MOSFET
Features
N-Channel，5V Logic Level Control
V
DS
R
DS(on),TYP
@
V
GS
=10 V
R
DS(on),TYP
@
V
GS
=4.5 V
80
8
9
65
V
mΩ
mΩ
A
Enhancement mode
Very low on-resistance
R
DS(on)
@
V
GS
=4.5 V
VitoMOS
®
Technology
100% Avalanche test
Pb-free lead plating; RoHS compliant
I
D
PDFN5x6
Part ID
VSP007N07MS
Package Type
PDFN5x6
Marking
007N07M
Tape and reel
information
3000PCS/Reel
Maximum ratings, at
T
A
=25° unless otherwise specified
C,
Symbol
Parameter
Drain-Source breakdown voltage
Gate-Source voltage
Diode continuous forward current
C
T
C
=25°
C
T
C
=25°
Continuous drain current @V
GS
=10V
C
T
C
=100°
Pulse drain current tested
①
Avalanche energy, single pulsed
②
Maximum power dissipation
Storage and Junction Temperature Range
C
T
C
=25°
41
260
56
60
-55 to 150
A
A
mJ
W
°
C
Rating
80
±
20
65
65
Unit
V
V
A
A
V
(BR)DSS
V
GS
I
S
I
D
I
DM
EAS
I
D
=
15A
C
T
C
=25°
P
D
T
STG
,
T
J
Thermal Characteristics
Symbol
R
JC
R
JA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Typical
2.5
60
Unit
°
C/W
°
C/W
Copyright Vanguard Semiconductor Co., Ltd
Rev C – SEP, 2018
www.vgsemi.com
VSP007N07MS
80V/65A N-Channel Advanced Power MOSFET
Symbol
Parameter
Condition
Min.
Typ.
Max.
Unit
Static Electrical Characteristics @ T
C
= 25° (unless otherwise stated)
C
V
(BR)DSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current(Tc=25℃)
V
GS
=0V, I
D
=250μA
V
DS
=64V,V
GS
=0V
V
DS
=64V,V
GS
=0V
V
GS
=±
20V,V
DS
=0V
V
DS
=V
GS
,I
D
=250μA
V
GS
=10V, I
D
=20A
V
GS
=4.5V, I
D
=10A
80
--
--
--
1.0
--
--
--
--
--
--
2.0
8
9
--
0.1
100
±
100
3.0
10
11
V
μA
μA
nA
V
mΩ
mΩ
I
DSS
Zero Gate Voltage Drain Current(Tc=125℃)
I
GSS
V
GS(TH)
R
DS(ON)
R
DS(ON)
Gate-Body Leakage Current
Gate Threshold Voltage
Drain-Source On-State Resistance③
Drain-Source On-State Resistance③
Dynamic Electrical Characteristics @ T
C
= 25° (unless otherwise stated)
C
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DS
=30V,I
D
=30A,
V
GS
=10V
f=1MHz
V
DS
=30V,V
GS
=0V,
f=1MHz
--
--
--
--
--
--
--
3000
250
205
1.5
78
19
10
--
--
--
--
--
--
--
pF
pF
pF
Ω
nC
nC
nC
R
g
Q
g
Q
gs
Q
gd
Switching Characteristics
t
d(on)
Turn-on Delay Time
V
DD
=30V,
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
I
D
=10A,
R
G
=6.8Ω,
V
GS
=10V
--
--
--
--
13
25
98
43
--
--
--
--
ns
ns
ns
ns
t
r
t
d(off)
t
f
Source- Drain Diode Characteristics@ T
C
= 25° (unless otherwise stated)
C
V
SD
t
rr
Q
rr
NOTE:
Forward on voltage
Reverse Recovery Time
Reverse Recovery Charge
I
SD
=20A,V
GS
=0V
T
j
=25℃,I
sd
=20A,
V
GS
=0V
di/dt=200A/μs
--
--
--
0.78
25
47
1.2
--
--
V
ns
nC
①
Repetitive rating; pulse width limited by max junction temperature.
②
Limited by T
Jmax
, starting T
J
= 25° L = 0.5mH, R
G
= 25
Ω
, I
AS
= 15A, V
GS
=10V. Part not recommended for use above this value
C,
③
Pulse width ≤ 300μs; duty cycle≤ 2%.
Copyright Vanguard Semiconductor Co., Ltd
Rev C – SEP, 2018
www.vgsemi.com
VSP007N07MS
80V/65A N-Channel Advanced Power MOSFET
Typical Characteristics
VGS(TH), Gate -Source Voltage (V)
V
DS
, Drain -Source Voltage (V)
Fig1.
Typical Output Characteristics
I
D
, Drain-Source Current (A)
Tj - Junction Temperature (°
C)
Fig2.
Normalized
Threshold Voltage Vs. Temperature
Tc, Case Temperature (°
C)
ID, Drain-Source Current (A)
V
GS
, Gate -Source Voltage (V)
Fig3.
Typical Transfer Characteristics
Normalized On Resistance
Tj - Junction Temperature (°
C)
Fig4.
Normalized On-Resistance Vs. Temperature
ISD, Reverse Drain Current (A)
V
SD
, Source-Drain Voltage (V)
Fig5.
Typical Source-Drain Diode Forward Voltage
Copyright Vanguard Semiconductor Co., Ltd
Rev C – SEP, 2018
ID - Drain Current (A)
V
DS
, Drain -Source Voltage (V)
Fig6.
Maximum Safe Operating Area
www.vgsemi.com
VSP007N07MS
80V/65A N-Channel Advanced Power MOSFET
Typical Characteristics
VGS, Gate-Source Voltage (V)
V
DS
, Drain-Source Voltage (V)
Fig7.
Typical Capacitance Vs.Drain-Source
Voltage
Voltage
C, Capacitance (pF)
Qg -Total Gate Charge (nC)
Fig8.
Typical Gate Charge Vs.Gate-Source
ZqJA Normalized Transient
Thermal Resistance
Pulse Width (s)
Fig9.
Normalized Maximum Transient Thermal
Fig10.
Unclamped Inductive Test Circuit and
waveforms
Fig11.
Switching Time Test Circuit and waveforms
Copyright Vanguard Semiconductor Co., Ltd
Rev C – SEP, 2018
www.vgsemi.com
VSP007N07MS
80V/65A N-Channel Advanced Power MOSFET
Marking Information
Vs
007N07M
XXXYWW
1st line：
2nd line：
3rd line：
Vanguard Code（Vs） Vanguard Logo
，
Part Number（007N07M）
Date code
（XXXYWW）
XXX： Wafer Lot Number
Y： Year Code， e.g. E means 2017
WW： Week Code
Copyright Vanguard Semiconductor Co., Ltd
Rev C – SEP, 2018
www.vgsemi.com
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