VSO008N10MS
100V/17A N-Channel Advanced Power MOSFET
Features
N-Channel，5V Logic Level Control
V
DS
R
DS(on),TYP
@
V
GS
=10 V
R
DS(on),TYP
@
V
GS
=4.5 V
100
6.4
10
17
V
mΩ
mΩ
A
Enhancement mode
Low on-resistance
R
DS(on)
@
V
GS
=4.5 V
VitoMOS
®
Ⅱ
Technology
100% Avalanche test
Pb-free lead plating; RoHS compliant
I
D
SOP8
Part ID
VSO008N10MS
Package Type
SOP8
Marking
008N10M
Tape and reel
information
3000PCS/Reel
Maximum ratings, at
T
A
=25° unless otherwise specified
C,
Symbol
Parameter
Drain-Source breakdown voltage
Gate-Source voltage
Diode continuous forward current
C
T
A
=25°
C
T
A
=25°
Continuous drain current @VGS=10V
C
T
A
=100°
Pulse drain current tested
①
Avalanche energy, single pulsed
②
Maximum power dissipation
C
T
A
=25°
C
T
A
=25°
11
68
104
3.1
Level 3
Storage and Junction Temperature Range
-55 to 150
°
C
A
A
mJ
W
Rating
100
±
20
2.6
17
Unit
V
V
A
A
V
(BR)DSS
V
GS
I
S
I
D
I
DM
EAS
P
D
MSL
T
STG
,
T
J
Thermal Characteristics
Symbol
R
θJL
Parameter
Thermal Resistance, Junction-to-Lead
Thermal Resistance, Junction-to-Ambient
Typical
24
40
Unit
°
C/W
°
C/W
R
JA
Copyright Vanguard Semiconductor Co., Ltd
Rev C – APR, 2019
www.vgsemi.com
VSO008N10MS
100V/17A N-Channel Advanced Power MOSFET
Electrical Characteristics
Symbol
Parameter
Condition
Min.
Typ.
Max.
Unit
Static Electrical Characteristics @ T
j
=25° (unless otherwise stated)
C
V
(BR)DSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
V
GS
=0V, I
D
=250μA
V
DS
=100V,V
GS
=0V
V
DS
=100V,V
GS
=0V
V
GS
=±
20V,V
DS
=0V
V
DS
=V
GS
,I
D
=250μA
V
GS
=10V, I
D
=10A
V
GS
=4.5V, I
D
=6A
100
--
--
--
1.3
--
--
--
--
--
--
1.8
6.4
10
--
1
100
±
100
2.3
8
12
V
uA
uA
nA
V
mΩ
mΩ
I
DSS
Zero Gate Voltage Drain Current(
T
j
=125℃)
I
GSS
V
GS(TH)
R
DS(ON)
Gate-Body Leakage Current
Gate Threshold Voltage
Drain-Source On-State Resistance③
Drain-Source On-State Resistance③
R
DS(ON)
Dynamic Electrical Characteristics @ T
j
= 25° (unless otherwise stated)
C
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DS
=50V,I
D
=10A,
V
GS
=10V
f=1MHz
V
DS
=30V,V
GS
=0V,
f=1MHz
2250
980
25
--
--
--
--
--
2645
1155
35
3.1
45
23
8
9
3050
1305
45
--
--
--
--
--
pF
pF
pF
Ω
nC
nC
nC
nC
Q
g
(10V)
Q
g
(4.5V)
Q
gs
Q
gd
Switching Characteristics
t
d(on)
Turn-on Delay Time
V
DD
=50V,
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
I
D
=10A,
R
G
=3.0Ω,
V
GS
=10V
--
--
--
--
11.7
7.2
34.5
12.3
--
--
--
--
ns
ns
ns
ns
t
r
t
d(off)
t
f
Source- Drain Diode Characteristics@ T
j
= 25° (unless otherwise stated)
C
V
SD
t
rr
Q
rr
NOTE:
Forward on voltage
Reverse Recovery Time
Reverse Recovery Charge
I
SD
=10A,V
GS
=0V
T
j
=25℃,I
sd
=10A,
V
GS
=0V
di/dt=500A/μs
--
--
--
0.8
21.6
44.7
1.2
--
--
V
ns
nC
①
Repetitive rating; pulse width limited by max junction temperature.
②
Limited by T
Jmax
, starting T
J
= 25° L = 0.5mH, R
G
= 25
Ω
, I
AS
= 16A, V
GS
=10V. Part not recommended for use above this value
C,
③
Pulse width ≤ 300μs; duty cycle≤ 2%.
Copyright Vanguard Semiconductor Co., Ltd
Rev C – APR, 2019
www.vgsemi.com
VSO008N10MS
100V/17A N-Channel Advanced Power MOSFET
Typical Characteristics
VGS(TH), Gate -Source Voltage (V)
VDS, Drain -Source Voltage (V)
Fig1.
Typical Output Characteristics
ID, Drain-Source Current (A)
Tj - Junction Temperature (°
C)
Fig2.
V
GS(TH)
Gate -Source Voltage Vs. Tj
Tc, Case Temperature (°
C)
ID, Drain-Source Current (A)
VGS, Gate -Source Voltage (V)
Fig3.
Typical Transfer Characteristics
Normalized On Resistance
Tj - Junction Temperature (°
C)
Fig4.
Normalized On-Resistance Vs. Tj
ISD, Reverse Drain Current (A)
VSD, Source-Drain Voltage (V)
Fig5.
Typical Source-Drain Diode Forward Voltage
ID - Drain Current (A)
VDS, Drain -Source Voltage (V)
Fig6.
Maximum Safe Operating Area
Copyright Vanguard Semiconductor Co., Ltd
Rev C – APR, 2019
www.vgsemi.com
VSO008N10MS
100V/17A N-Channel Advanced Power MOSFET
Typical Characteristics
VGS, Gate-Source Voltage (V)
VDS, Drain-Source Voltage (V)
Fig7.
Typical Capacitance Vs. Drain-Source Voltage
C, Capacitance (pF)
Qg - Total Gate Charge (nC)
Fig8.
Typical Gate Charge Vs. Gate-Source Voltage
ZθJA Normalized Transient
Thermal Resistance
Pulse Width (s)
Fig9.
Normalized Maximum Transient Thermal Impedance
Fig10.
Unclamped Inductive Test Circuit and waveforms
Fig11.
Switching Time Test Circuit and waveforms
Copyright Vanguard Semiconductor Co., Ltd
Rev C – APR, 2019
www.vgsemi.com
VSO008N10MS
100V/17A N-Channel Advanced Power MOSFET
Marking Information
V
s
008N10M
XXXYWW
1
st
line： Vanguard Code（Vs） Vanguard Logo
，
2
nd
line：Part Number（008N10M）
3
rd
line：Date code
（XXXYWW）
XXX： Wafer Lot Number Code , code changed with Lot Number
Y：
Year Code，(e.g. E=2017, F=2018, G=2019, H=2020, etc)
WW： Week Code (01 to 53)
Copyright Vanguard Semiconductor Co., Ltd
Rev C – APR, 2019
www.vgsemi.com
FPGA/CPLD
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