VSD013N10MS
100V/52A N-Channel Advanced Power MOSFET
V
DS
100
11
12
52
V
mΩ
mΩ
A
Features
N-Channel
Enhancement mode
Very low on-resistance
R
DS(on)
@
V
GS
=4.5 V
Fast Switching
100% Avalanche test
Pb-free lead plating; RoHS compliant
R
DS(on),TYP
@
V
GS
=10 V
R
DS(on),TYP
@
V
GS
=4.5 V
I
D
TO-252
Part ID
VSD013N10MS
Package Type
TO-252
Marking
013N10M
Tape and reel
information
3000PCS/Reel
Maximum ratings, at
T
j
=25°C, unless otherwise specified
Symbol
Parameter
Drain-Source breakdown voltage
Diode continuous forward current
Continuous drain current@V
GS
=10V
Pulse drain current tested
①
Avalanche energy, single pulsed
②
Avalanche energy, single pulsed
②
Maximum power dissipation
Gate-Source voltage
Storage and operating temperature range
Rating
100
Unit
V
A
A
A
A
mJ
A
W
V
°C
V
(BR)DSS
I
S
T
C
=25°C
T
C
=25°C
T
A
=100°C
T
C
=25°C
I
D
=
18A
52
52
33
150
60
20
I
D
I
DM
EAS
IAS
P
D
V
GS
T
A
=25°C
78
±20
-55 to 175
T
STG
T
J
Thermal Characteristics
Symbol
R
JC
R
JA
Parameter
Thermal Resistance-Junction to Case
Thermal Resistance Junction-Ambient
Typical
1.9
60
Unit
°C/W
°C/W
Copyright Vanguard Semiconductor Co., Ltd
Rev A– Dec.7
th
, 2015
www.vgsemi.com
VSD013N10MS
100V/52A N-Channel Advanced Power MOSFET
Symbol
Parameter
Condition
Min.
Typ.
Max.
Unit
Static Electrical Characteristics @ T
C
= 25°C (unless otherwise stated)
V
(BR)DSS
I
DSS
I
GSS
V
GS(TH)
R
DS(ON)
R
DS(ON)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current(Tc=25℃)
Zero Gate Voltage Drain Current(Tc=125℃)
Gate-Body Leakage Current
Gate Threshold Voltage
Drain-Source On-State Resistance③
Drain-Source On-State Resistance③
V
GS
=0V I
D
=250μA
V
DS
=100V,V
GS
=0V
V
DS
=100V,V
GS
=0V
V
GS
=±20V,V
DS
=0V
V
DS
=V
GS
,I
D
=250μA
V
GS
=10V, I
D
=25A
V
GS
=4.5V, I
D
=5A
100
--
--
--
1.0
--
--
--
--
--
--
2.0
11
12
--
1
100
±100
3.0
13
15
V
μA
μA
nA
V
mΩ
mΩ
Dynamic Electrical Characteristics @ T
C
= 25°C (unless otherwise stated)
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DS
=50V,I
D
=4A,
V
GS
=10V
V
DS
=20V,V
GS
=0V,
f=1MHz
--
--
--
--
--
--
3625
225
140
83
12
16.5
--
--
--
--
--
--
pF
pF
pF
nC
nC
nC
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-on Delay Time
V
DD
=50V,
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
I
D
=4A,
R
G
=6.8Ω,
V
GS
=10V
--
--
--
--
23
112
50
100
--
--
--
--
nS
nS
nS
nS
Source- Drain Diode Characteristics@ T
C
= 25°C (unless otherwise stated)
V
SD
t
rr
Q
rr
NOTE:
Forward on voltage
Reverse Recovery Time
Reverse Recovery Charge
I
SD
=25A,V
GS
=0V
T
j
=25℃,I
sd
=4A,
V
GS
=0V
di/dt=100A/μs
--
--
0.83
33
42
1.20
--
V
nS
nC
①
Repetitive rating; pulse width limited by max. junction temperature.
②
Limited by T
Jmax
, starting T
J
= 25°C, L = 0.3mH,R
G
= 25
Ω
, I
AS
= 20A, V
GS
=10V. Part not recommended for use above this value
③
Pulse width
≤
300μs; duty cycle≤ 2%.
Copyright Vanguard Semiconductor Co., Ltd
Rev A– Dec.7
th
, 2015
www.vgsemi.com
VSD013N10MS
100V/52A N-Channel Advanced Power MOSFET
Typical Characteristics
I
D
, Drain-Source Current (A)
V
DS
, Drain -Source Voltage (V)
Fig1.
Typical Output Characteristics
I
D
, Drain-Source Current (A)
V
GS
, Gate -Source Voltage (V)
Fig2.
Typical Transfer Characteristics
I
SD
, Reverse Drain Current (A)
Normalized On Resistance
VGS=10V
ID=25A
V
SD
, Source-Drain Voltage (V)
Fig3.
Typical Source-Drain Diode Forward
Tj - Junction Temperature (°C)
Fig4.
Normalized On-Resistance Vs. Temperature
I
D
- Drain Current (A)
Power(W)
T1, Single Pulse Time (s)
Fig5. Single Pulse Maximum Power Dissipation
Copyright Vanguard Semiconductor Co., Ltd
Rev A– Dec.7
th
, 2015
V
DS
, Drain -Source Voltage (V)
Fig6.
Maximum Safe Operating Area
www.vgsemi.com
VSD013N10MS
100V/52A N-Channel Advanced Power MOSFET
Typical Characteristics
V
GS
, Gate-Source Voltage (V)
V
DS
, Drain-Source Voltage (V)
Fig7.
Typical Capacitance Vs.Drain-Source Voltage
C, Capacitance (pF)
Qg -Total Gate Charge (nC)
Fig8.
Typical Gate Charge Vs.Gate-Source Voltage
Transient Thermal Resistance
r(t) , Normalized Effective
T
1
, Square Wave Pulse Duration(sec)
Fig9.
T1 ,Transient Thermal Response Curve
Fig10.
Unclamped Inductive Test Circuit and
waveforms
Fig11.
Switching Time Test Circuit and waveforms
Copyright Vanguard Semiconductor Co., Ltd
Rev A– Dec.7
th
, 2015
www.vgsemi.com
VSD013N10MS
100V/52A N-Channel Advanced Power MOSFET
TO-252 Package Outline
DIMENSIONS
( unit : mm )
Symbol
A
b
b
2
D
1
E
e
H
D
L
1
w
Min
2.22
0.71
5.00
5.98
6.47
--
9.60
--
--
Typ
2.30
0.79
5.30
6.05
6.60
2.28
10.08
0.50
0.20
Max
2.38
0.89
5.46
6.22
6.73
--
10.40
--
--
Symbol
A
1
b
1
c
D
2
E
1
e
1
L
L
2
y
Min
0.46
0.90
0.20
--
5.10
--
2.75
0.80
0.20
Typ
0.58
0.98
0.40
4.00
5.28
4.57
2.95
0.90
--
Max
0.93
1.10
0.56
--
5.45
--
3.05
1.10
--
Customer Service
Sales and Service:
sales@vgsemi.com
Vanguard Semiconductor CO., LTD
TEL:
(86-755) -26902410
FAX:
(86-755) -26907027
WEB:
www.vgsemi.com
Copyright Vanguard Semiconductor Co., Ltd
Rev A– Dec.7
th
, 2015
www.vgsemi.com
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