VS4518AD
-40V/-33A P-Channel Advanced Power MOSFET
Features
P-Channel，-5V Logic Level Control
Fast Switching
Enhancement mode
100% Avalanche Tested
Pb-free lead plating; RoHS compliant
V
DS
R
DS(on),TYP
@
V
GS
=-10 V
R
DS(on),TYP
@
V
GS
=-4.5V
I
D
-40
26
42
-33
V
mΩ
mΩ
A
TO-252
Part ID
VS4518AD
Package Type
TO-252
Marking
4518AD
Tape and reel information
2500PCS/Reel
Maximum ratings, at T
j
=25 °C, unless otherwise specified
Symbol
Parameter
Drain-Source breakdown voltage
Diode continuous forward current
Rating
-40
Unit
V
A
A
A
A
mJ
W
V
°C
V
(BR)DSS
I
S
T
C
=25°C
T
C
=25°C
-33
-33
-23
-132
68
I
D
I
DM
EAS
Continuous drain current @V
GS
=-10V
T
C
=100°C
Pulse drain current tested
①
Avalanche energy, single pulsed
②
Maximum power dissipation
Gate-Source voltage
Storage and operating temperature range
T
C
=25°C
P
D
V
GS
T
C
=25°C
48
±20
-55 to 175
T
STG
T
J
Thermal Characteristics
R
θ
JC
R
θ
JA
Thermal Resistance-Junction to Case
Thermal Resistance-Junction to Ambient
3.1
100
°C/W
°C/W
Copyright Vanguard Semiconductor Co., Ltd
Rev B – FEB, 2018
www.vgsemi.com
VS4518AD
-40V/-33A P-Channel Advanced Power MOSFET
Symbol
Parameter
Condition
Min.
Typ.
Max.
Unit
Static Electrical Characteristics @ T
J
= 25°C (unless otherwise stated)
V
(BR)DSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
V
GS
=0V, I
D
=-250μA
V
DS
=-40V,V
GS
=0V
V
DS
=-40V,V
GS
=0V
V
GS
=±20V,V
DS
=0V
V
DS
=V
GS
,I
D
=-250μA
V
GS
=-10V, I
D
=-20A
V
GS
=-4.5V, I
D
=-15A
-40
--
--
--
-1.3
--
--
--
--
--
--
-1.8
26
42
--
-1
-100
±100
-2.4
34
55
V
μA
μA
nA
V
mΩ
mΩ
I
DSS
Zero Gate Voltage Drain Current(Tj=125℃)
I
GSS
V
GS(TH)
R
DS(ON)
R
DS(ON)
Gate-Body Leakage Current
Gate Threshold Voltage
Drain-Source On-State Resistance
③
Drain-Source On-State Resistance
③
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise stated)
C
iss
C
oss
C
rss
R
g
Q
g
Q
gs
Q
gd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DS
=-20V,I
D
=-20A,
V
GS
=-10V
f=1MHz
V
DS
=-20V,V
GS
=0V,
f=1MHz
1100
65
50
--
--
--
--
1310
115
90
9.5
30
4
6
1500
165
130
--
--
--
--
pF
pF
pF
Ω
nC
nC
nC
Switching Characteristics
t
d(on)
Turn-on Delay Time
V
DD
=-20V,
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
I
D
=-20A,
R
G
=3.0Ω,
V
GS
=-10V
--
--
--
--
9
7
192
64
--
--
--
--
nS
nS
nS
nS
t
r
t
d(off)
t
f
Source- Drain Diode Characteristics@ T
J
= 25°C (unless otherwise stated)
V
SD
t
rr
Q
rr
NOTE:
Forward on voltage
Reverse Recovery Time
Reverse Recovery Charge
I
SD
=-20A,V
GS
=0V
T
j
=25℃,I
sd
=-20A,
V
GS
=0V
di/dt=-100A/μs
--
--
-1
17
7
-1.2
--
V
nS
nC
①
Repetitive rating; pulse width limited by max. junction temperature.
②
Limited by TJmax, starting TJ = 25°C, L = 0.5mH,RG = 25Ω, IAS = -13A, VGS =-10V. Part not recommended for use above this value
③Pulse
width
≤ 300μs; duty cycle≤ 2%.
Copyright Vanguard Semiconductor Co., Ltd
Rev B – FEB, 2018
www.vgsemi.com
VS4518AD
-40V/-33A P-Channel Advanced Power MOSFET
Typical Characteristics
-VGS(TH), Gate -Source Voltage (V)
-VDS,- Drain -Source Voltage (V)
Fig1.
Typical Output Characteristics
-ID, -Drain-Source Current (A)
Tj - Junction Temperature (°C)
Fig2.
-V
GS(TH)
Gate -Source Voltage Vs.Tj
-ID, -Drain-Source Current (A)
-VGS, -Gate -Source Voltage (V)
Fig3.
Typical Transfer Characteristics
Normalized On Resistance
Tj - Junction Temperature (°C)
Fig4.
Normalized On-Resistance Vs. Tj
-ISD, -Reverse Drain Current (A)
-VSD, -Source-Drain Voltage (V)
Fig5.
Typical Source-Drain Diode Forward Voltage
Copyright Vanguard Semiconductor Co., Ltd
Rev B – FEB, 2018
-ID,- Drain Current (A)
-VDS, -Drain -Source Voltage (V)
Fig6.
Maximum Safe Operating Area
www.vgsemi.com
VS4518AD
-40V/-33A P-Channel Advanced Power MOSFET
Typical Characteristics
-VGS, -Gate-Source Voltage (V)
-VDS , -Drain-Source Voltage (V)
Fig7.
Typical Capacitance Vs.Drain-Source Voltage
C, Capacitance (pF)
Qg -Total Gate Charge (nC)
Fig8.
Typical Gate Charge Vs.Gate-Source Voltage
ZθJC
Normalized Transient
Thermal Resistance
Pulse Width (s)
Fig9.
Normalized Maximum Transient Thermal Impedance
Fig10.
Unclamped Inductive Test Circuit and Waveforms
Fig11.
Switching Time Test Circuit and waveforms
Copyright Vanguard Semiconductor Co., Ltd
Rev B – FEB, 2018
www.vgsemi.com
VS4518AD
-40V/-33A P-Channel Advanced Power MOSFET
TO-252 Package Outline Data
Symbol
Dimensions (unit: mm)
Min
Typ
Max
Notes:
1. Refer to JEDEC TO-252 variation AA
2. Dimension "E" does NOT include mold flash, protrusions or
gate burrs. Mold flash, protrusions or gate burrs shall not
exceed 0.1524mm per side.
3. Dimension "D1" does NOT include interlead flash or
protrusion. Interlead flash or protrusion shall not exceed
0.1524mm per end.
A
A
1
b
b
1
b
2
c
D
1
D
2
E
E
1
e
e
1
H
D
L
L
1
L
2
w
y
2.20
0.46
0.64
0.77
5.00
0.458
5.98
5.21
6.40
4.40
--
9.40
1.40
0.50
--
--
2.30
0.50
0.76
0.85
5.33
0.508
6.10
--
6.60
--
2.286 BSC
4.57
10.00
2.743 REF
1.52
0.80
0.20
--
2.38
0.63
0.89
1.14
5.46
0.558
6.223
--
6.731
--
--
10.40
1.77
1.01
--
0.20
Customer Service
Sales and Service:
sales@vgsemi.com
Vanguard Semiconductor CO., LTD
TEL:
(86-755) -26902410
FAX:
(86-755) -26907027
WEB:
www.vgsemi.com
Copyright Vanguard Semiconductor Co., Ltd
Rev B – FEB, 2018
www.vgsemi.com
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