VS4020AS
40V/18A N-Channel Advanced Power MOSFET
Features
Low On-Resistance
Fast Switching
100% Avalanche Tested
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
V
DS
R
DS(on),TYP
@
V
GS
=10 V
R
DS(on),TYP
@
V
GS
=4.5 V
I
D
40
6.0
7.5
18
V
mΩ
mΩ
A
Description
VS4020AS designed by the trench processing techniques to
achieve extremely low on-resistance. Additional features of this
design are a 150° junction operating temperature, fast
C
switching speed and improved repetitive avalanche rating.
These features combine to make this design an extremely
efficient and reliable device for use in Motor applications and a
wide variety of other applications.
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only;and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to
absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are
measured under board mounted and still air conditions. Ambient temperature (TA) is 25° unless otherwise specified.
C,
Symbol
Parameter
Rating
Unit
Common Ratings (T
C
=25° Unless Otherwise Noted)
C
V
GS
Gate-Source Voltage
Drain-Source Breakdown Voltage
Human Body Mode
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
Avalanche energy, single pulsed
②
C
T
C
=25°
±
20
40
±
800
150
-55 to 150
2.6
58
V
V
V
°
C
°
C
A
mJ
V
(BR)DSS
ESD
T
J
T
STG
I
S
EAS
Mounted on Large Heat Sink
I
DM
Pulse Drain Current Tested (Sillicon Limit)
①
Continuous Drain current@V
GS
=10V
C
T
C
=25°
C
T
C
=25°
C
T
C
=25°
72
18
3.1
1.9
40
A
A
W
W
°
C/W
I
D
P
D
R
JA
Maximum Power Dissipation
C
T
C
=75°
Thermal Resistance-Junction to Ambient
Copyright Vanguard Semiconductor Co., Ltd
Rev C – JAN, 2018
www.vgsemi.com
VS4020AS
40V/18A N-Channel Advanced Power MOSFET
Typicle Electrical Characteristics
Symbol
Parameter
Condition
V
GS
=0V, I
D
=250μA
V
DS
=32V,V
GS
=0V
V
DS
=32V,V
GS
=0V
V
GS
=±
20V,V
DS
=0V
V
DS
=V
GS
,I
D
=250μA
V
GS
=10V, I
D
=10A
V
GS
=4.5V, I
D
=6A
Min.
Typ.
Max.
Unit
Static Electrical Characteristics @ T
J
= 25° (unless otherwise stated)
C
V
(BR)DSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current(Tj=25℃)
40
--
--
--
1.0
--
--
--
--
--
--
2.0
6.0
7.5
--
1
100
±
100
2.5
7.5
8.5
V
μA
μA
nA
V
mΩ
mΩ
I
DSS
Zero Gate Voltage Drain Current(Tj=125℃)
I
GSS
V
GS(TH)
R
DS(ON)
Gate-Body Leakage Current
Gate Threshold Voltage
Drain-Source On-State Resistance③
Drain-Source On-State Resistance③
R
DS(ON)
Dynamic Electrical Characteristics @ T
J
= 25° (unless otherwise stated)
C
C
iss
C
oss
C
rss
Q
g
Q
gs
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
GS
=10V
Total Gate Charge
V
GS
=4.5V
Gate-Source Charge
Gate-Drain Charge
V
DS
=20V,I
D
=10A,
V
GS
=10V
V
DS
=20V,V
GS
=0V,
f=1MHz
--
--
--
--
2250
320
195
42
25
--
--
--
--
pF
pF
pF
nC
nC
--
--
7
9.5
--
--
nC
nC
Q
gd
t
d(on)
Switching Characteristics
Turn-on Delay Time
V
DD
=20V,
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
I
D
=9A,
R
G
=6.8Ω,
V
GS
=10V
--
16
--
nS
--
--
17.5
24
--
--
nS
nS
--
16.5
--
nS
t
r
t
d(off)
t
f
V
SD
t
rr
Q
rr
NOTE:
Source- Drain Diode Characteristics@ T
J
= 25° (unless otherwise stated)
C
Forward on voltage
Reverse Recovery Time
Reverse Recovery Charge
I
SD
=10A,V
GS
=0V
T
j
=25℃,I
sd
=9A,
V
GS
=0V
di/dt=100A/μs
16
--
nC
--
--
--
28
1.2
--
V
nS
①
Repetitive rating; pulse width limited by max. junction temperature.
②
Limited by T
Jmax
, starting T
J
= 25° L = 0.5mH, R
G
= 25
Ω
, I
AS
= 12A, V
GS
=10V. Part not recommended for use above this value
C,
③
Pulse width ≤ 300μs; duty cycle≤ 2%.
Copyright Vanguard Semiconductor Co., Ltd
Rev C – JAN, 2018
www.vgsemi.com
VS4020AS
40V/18A N-Channel Advanced Power MOSFET
Typical Characteristics
I
D
, Drain-Source Current (A)
V
DS
, Drain -Source Voltage (V)
Fig1.
Typical Output Characteristics
I
D
, Drain-Source Current (A)
Tc - Case Temperature (°
C)
Fig2.
Maximum Drain Current Vs.Case Temperature
I
D
, Drain-Source Current (A)
V
GS
, Gate -Source Voltage (V)
Fig3.
Typical Transfer Characteristics
Normalized On Resistance
Tj - Junction Temperature (°
C)
Fig4.
Normalized On-Resistance Vs. Temperature
V
GS
, Gate -Source Voltage (V)
Fig5. On Resistance
Vs.
Gate -Source Voltage
Copyright Vanguard Semiconductor Co., Ltd
Rev C – JAN, 2018
I
D
- Drain Current (A)
On Resistance (
mΩ
)
V
DS
, Drain -Source Voltage (V)
Fig6.
Maximum Safe Operating Area
www.vgsemi.com
VS4020AS
40V/18A N-Channel Advanced Power MOSFET
Typical Characteristics
I
SD
, Reverse Drain Current (A)
V
SD
, Source-Drain Voltage (V)
Fig7.
Typical Source-Drain Diode Forward Voltage
V
GS
, Gate-Source Voltage (V)
Qg -Total Gate Charge (nC)
Fig8.
Typical Gate Charge Vs.Gate-Source Voltage
V
GS(TH)
, Gate -Source Voltage (V)
Tj - Junction Temperature (°
C)
Fig9.
Threshold Voltage Vs. Temperature
C, Capacitance (pF)
V
DS
, Drain-Source Voltage (V)
Fig10.
Typical Capacitance Vs.Drain-Source Voltage
Fig11.
Unclamped Inductive Test Circuit and
waveforms
Fig12.
Switching Time Test Circuit and waveforms
Copyright Vanguard Semiconductor Co., Ltd
Rev C – JAN, 2018
www.vgsemi.com
VS4020AS
40V/18A N-Channel Advanced Power MOSFET
SOP8 Package Outline Data
Dimensions (unit: mm)
Label
Min
A
A
1
A
2
A
3
b
p
c
D
E
e
H
E
L
L
p
Q
v
w
y
Z
θ
--
0.10
1.25
--
0.36
0.19
4.80
3.80
--
5.80
--
0.40
0.60
--
--
--
0.30
0°
Typ
--
0.18
1.35
0.25
0.42
0.22
4.92
3.90
1.27
6.00
1.05
0.68
0.65
0.25
0.25
0.10
0.50
Max
1.75
0.25
1.50
--
0.51
0.25
5.00
4.00
--
6.20
--
1.00
0.725
--
--
--
0.70
8°
Notes:
1. Follow JEDEC MS-012.
2. Dimension "D" does NOT include mold flash, protrusions or gate burrs. Mold flash, protrusions or gate burrs
shall not exceed 0.15mm per side.
3. Dimension "E" does NOT include interlead flash or protrusion. Interlead flash or protrusion shall not exceed
0.25mm per side.
4. Dimension "bp" does NOT include dambar protrusion. Allowable dambar protrusion shall be 0.1mm total in
excess of "bp" dimension at maximum material condition. The dambar cannot be located on the lower radius of
the foot.
Customer Service
Sales and Service:
sales@vgsemi.com
Vanguard Semiconductor CO., LTD
TEL:
(86-755) -26902410
FAX:
(86-755) -26907027
WEB:
www.vgsemi.com
Copyright Vanguard Semiconductor Co., Ltd
Rev C – JAN, 2018
www.vgsemi.com
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