PB521BX
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V
(BR)DSS
-20V
R
DS(ON)
21mΩ @V
GS
= -4.5V
I
D
-7.4A
PDFN 2X2S
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 ° Unless Otherwise Noted)
C
PARAMETERS/TEST CONDITIONS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
1
Power Dissipation
T
A
= 25 °
C
T
A
= 70°
C
T
A
= 25 °
C
T
A
= 70 °
C
SYMBOL
V
DS
V
GS
I
D
I
DM
P
D
T
j
, T
stg
LIMITS
-20
±8
-8
-6.4
29
2.1
1.4
-55 to 150
W
°
C
A
UNITS
V
Operating Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient
2
1
2
SYMBOL
R
qJA
TYPICAL
MAXIMUM
57
UNITS
° /W
C
Pulse width limited by maximum junction temperature.
The value of R
θJA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Coppe.
REV 1.2
1
2014/8/15
PB521BX
P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (T
J
= 25 ° Unless Otherwise Noted)
C,
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State
Resistance
1
Forward Transconductance
1
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
2
Gate-Source Charge
2
Gate-Drain Charge
2
Turn-On Delay Time
2
Rise Time
2
Turn-Off Delay Time
Fall Time
2
Continuous Current
Forward Voltage
1
Reverse Recovery Time
Reverse Recovery Charge
1
2
2
LIMITS
MIN
-20
-0.45
-0.6
-0.85
±100
-1
-10
24
19
15
21
1727
40
28
21
TYP
MAX
UNITS
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
V
GS
= 0V, I
D
= -250mA
V
DS
= V
GS
, I
D
= -250mA
V
DS
= 0V, V
GS
= ±8V
V
DS
= -16V, V
GS
= 0V
V
DS
= -10V, V
GS
= 0V, T
J
= 55°
C
V
GS
= -1.8V, I
D
= -1A
V
GS
= -2.5V, I
D
= -2A
V
GS
= -4.5V, I
D
= -2.5A
V
DS
= -10V, I
D
= -2.5A
DYNAMIC
V
nA
mA
R
DS(ON)
g
fs
C
iss
C
oss
C
rss
R
g
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
mΩ
S
V
GS
= 0V, V
DS
= -10V, f = 1MHz
V
GS
= 0V, V
DS
= 0V, f = 1MHz
V
DS
= -10V , V
GS
= -4.5V,
I
D
= -2.5A
179
155
10
21
1.8
4.9
28
21
81
pF
Ω
nC
V
DD
= -10V
I
D
@ -2.5A,
V
GEN
= -4.5V, R
G
= 6Ω
nS
48
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (T
J
= 25 °
C)
I
S
V
SD
t
rr
Q
rr
I
F
= -2.5A, V
GS
= 0V
I
F
= -2.5A, dl
F
/dt = 100A / μS
35
18
-1.7
-1.2
A
V
nS
nC
Pulse test : Pulse Width
300
msec,
Duty Cycle
2％.
Independent of operating temperature.
REV 1.2
2
2014/8/15
PB521BX
P-Channel Enhancement Mode MOSFET
REV 1.2
3
2014/8/15
PB521BX
P-Channel Enhancement Mode MOSFET
REV 1.2
4
2014/8/15
PB521BX
P-Channel Enhancement Mode MOSFET
REV 1.2
5
2014/8/15
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