P5103EMA
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V
(BR)DSS
-30V
R
DS(ON)
51mΩ @V
GS
= -10V
I
D
-3.8A
SOT-23(S)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 ° Unless Otherwise Noted)
C
PARAMETERS/TEST CONDITIONS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
1
Power Dissipation
Junction & Storage Temperature Range
T
A
= 25 °
C
T
A
= 70 °
C
T
A
= 25 °
C
T
A
= 70 °
C
SYMBOL
V
DS
V
GS
I
D
I
DM
P
D
T
J
, T
STG
LIMITS
-30
±20
-3.8
-3
-20
1
0.7
-55 to 150
W
°
C
A
UNITS
V
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient
2
1
2
SYMBOL
R
qJA
TYPICAL
MAXIMUM
117
UNITS
° /W
C
Limited by maximum junction temperature.
The value of R
θJA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air
environment with T
A
=25°
C.
REV 1.0
1
2014/4/24
P5103EMA
P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (T
J
= 25 ° Unless Otherwise Noted)
C,
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State
Resistance
1
Forward Transconductance
1
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
2
LIMITS
MIN
-30
-1
-1.8
-3
±100
-1
-10
65
41
7
562
85
51
TYP
MAX
UNIT
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
R
DS(ON)
g
fs
C
iss
C
oss
C
rss
Q
g(VGS=10V)
Q
g(VGS=4.5V)
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
GS
= 0V, I
D
= -250mA
V
DS
= V
GS
, I
D
= -250mA
V
DS
= 0V, V
GS
= ±20V
V
DS
= -24V, V
GS
= 0V
V
DS
= -20V, V
GS
= 0V , T
J
= 70 °
C
V
GS
= -4.5V, I
D
= -3.5A
V
GS
= -10V, I
D
= -3.8A
V
DS
= -5V, I
D
= -3.8A
DYNAMIC
V
GS
= 0V, V
DS
= -15V, f = 1MHz
V
nA
mA
mΩ
S
98
85
13.3
6.9
1.9
3.5
22
pF
Gate-Source Charge
2
Gate-Drain Charge
2
Turn-On Delay Time
2
Rise Time
2
Turn-Off Delay Time
Fall Time
2
Continuous Current
Forward Voltage
Reverse Recovery Time
Reverse Recovery Change
1
2
1
2
V
DS
= -15V, I
D
= -3.8A
nC
V
DS
= -15V
I
D
@
-3.8A, V
GS
= -10V, R
GEN
= 6Ω
23
110
nS
58
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICE ( T
J
= 25
°
)
C
I
S
V
SD
t
rr
Q
rr
I
F
= -3.8A, V
GS
= 0V
I
F
= -3.8A, dl
F
/dt = 100A /mS
13.2
6
-0.9
-1.1
A
V
nS
nC
Pulse test : Pulse Width
300
msec,
Duty Cycle
2％.
Independent of operating temperature.
REV 1.0
2
2014/4/24
P5103EMA
P-Channel Enhancement Mode MOSFET
REV 1.0
3
2014/4/24
P5103EMA
P-Channel Enhancement Mode MOSFET
REV 1.0
4
2014/4/24
P5103EMA
P-Channel Enhancement Mode MOSFET
*因为各家封装模具不同而外观略有所差异，不½响电性及Layout。
REV 1.0
5
2014/4/24
嵌入式系统
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