PE606BA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V
(BR)DSS
30V
R
DS(ON)
18mΩ @V
GS
= 10V
I
D3
23A
PDFN 3X3P
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 ° Unless Otherwise Noted)
C
PARAMETERS/TEST CONDITIONS
Drain-Source Voltage
Gate-Source Voltage
T
c
= 25 °
C
Continuous Drain Current
3
T
c
= 100 °
C
T
A
= 25 °
C
T
A
= 70 °
C
Pulsed Drain Current
1
Avalanche Current
Avalanche Energy
Power Dissipation
Power Dissipation
4
L =0.1mH
T
C
= 25 °
C
T
C
= 100 °
C
T
A
= 25 °
C
T
A
= 70 °
C
T
J
, T
stg
P
D
I
DM
I
AS
E
AS
I
D
SYMBOL
V
DS
V
GS
LIMITS
30
±20
23
15
10.6
8.5
60
12.6
7.9
17
7
3.5
2.2
-55 to 150
°
C
W
mJ
A
UNITS
V
V
Operating Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient
2
Junction-to-Ambient
2
Junction-to-Case
1
2
SYMBOL
t
≦10s
Steady-State
Steady-State
R
qJA
R
qJA
R
qJC
TYPICAL
MAXIMUM
35
70
7
UNITS
° /W
C
Pulse width limited by maximum junction temperature.
The value of R
θJA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air
environment with T
A
=25°C.
3
4
Package limitation current is 11A.
The Power dissipation is based on R
qJA
t
≦10s
value.
REV 1.1
1
2017/7/6
PE606BA
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (T
J
= 25 ° Unless Otherwise Noted)
C,
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain
Current
Drain-Source On-State
Resistance
1
Forward Transconductance
1
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
2
Gate-Source Charge
Gate-Drain Charge
2
Turn-On Delay Time
2
Rise Time
2
Turn-Off Delay Time
2
Fall Time
2
2
LIMITS
MIN
TYP
MAX
UNITS
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
R
DS(ON)
g
fs
C
iss
C
oss
C
rss
R
g
V
GS
= 0V, I
D
= 250mA
V
DS
= V
GS
, I
D
= 250mA
V
DS
= 0V, V
GS
= ±20V
V
DS
= 24V, V
GS
= 0V
V
DS
= 20V, V
GS
= 0V, T
J
=55 °
C
V
GS
= 4.5V, I
D
= 6A
V
GS
= 10V , I
D
=7A
V
DS
= 10V, I
D
= 7A
DYNAMIC
30
1.3
1.75
2.3
±100
1
10
19
13
25
333
27
18
V
nA
mA
mΩ
S
V
GS
= 0V, V
DS
= 15V, f = 1MHz
V
GS
= 0V, V
DS
= 0V, f = 1MHz
64
43
2
7.5
pF
Ω
Q
g(VGS=10V)
Q
g(VGS=4.5V)
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 15V,
I
D
@
7A, V
GEN
= 10V, R
G
= 6Ω
V
DS
= 15V , I
D
= 7A
4.3
1.1
2.3
17
17
37
nC
nS
18
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (T
J
= 25 °
C)
I
S
V
SD
t
rr
Q
rr
I
F
= 7A, V
GS
= 0V
I
F
= 7A, dl
F
/dt = 100A / μS
8.4
2.2
15
1.1
A
V
nS
nC
Continuous Current
3
Forward Voltage
1
Reverse Recovery Time
Reverse Recovery Charge
1
2
Pulse test : Pulse Width
300
msec,
Duty Cycle
2％.
Independent of operating temperature.
Package limitation current is 11A.
3
REV 1.1
2
2017/7/6
微控制器 MCU
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