PM5G8EA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V
(BR)DSS
20V
R
DS(ON)
22.5mΩ @V
GS
= 4.5V
I
D
5.7A
SOT-23(S)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 ° Unless Otherwise Noted)
C
PARAMETERS/TEST CONDITIONS
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
1
Power Dissipation
3
T
A
= 25 °
C
T
A
= 70 °
C
T
A
= 25 °
C
T
A
= 70 °
C
SYMBOL
V
GS
I
D
I
DM
P
D
T
J
, T
STG
LIMITS
±8
5.7
4.5
16
1.25
0.8
-55 to 150
W
°
C
A
UNITS
V
Operating Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient
2
Junction-to-Ambient
2
1
2
SYMBOL
t
≦10s
Steady-State
R
qJA
R
qJA
TYPICAL
MAXIMUM
100
145
UNITS
° /W
C
Pulse width limited by maximum junction temperature.
The value of R
qJA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper.
The Power dissipation is based on R
qJA
t
≦10s
value.
3
REV 1.0
1
2016/12/20
PM5G8EA
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (T
J
= 25 ° Unless Otherwise Noted)
C,
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State
Resistance
1
Forward Transconductance
1
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
2
Gate-Source Charge
2
Gate-Drain Charge
2
Turn-On Delay Time
2
Rise Time
2
Turn-Off Delay Time
2
Fall Time
2
Continuous Current
Forward Voltage
1
Reverse Recovery Time
Reverse Recovery Change
1
2
LIMITS
MIN
20
0.5
0.7
1
±10
1
10
31
23
18
31
867
41
29
22.5
TYP
MAX
UNITS
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
V
GS
= 0V, I
D
= 250mA
V
DS
= V
GS
, I
D
= 250mA
V
DS
= 0V, V
GS
= ±8V
V
DS
= 16V, V
GS
= 0V
V
DS
= 10V, V
GS
= 0V , T
J
= 55 °
C
V
GS
= 1.8V, I
D
= 2A
V
GS
= 2.5V, I
D
= 4.5A
V
GS
= 4.5V, I
D
= 5A
V
DS
= 5V, I
D
= 4.6A
DYNAMIC
V
mA
mA
R
DS(ON)
g
fs
C
iss
C
oss
C
rss
Q
g(VGS=4.5V)
Q
g(VGS=2.5V)
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
mΩ
S
V
GS
= 0V, V
DS
= 10V, f = 1MHz
81
68
7.3
pF
V
DS
= 10V,V
GS
= 4.5V,
I
D
= 5A
4.6
0.6
2.9
14
nC
V
DD
= 10V
I
D
@
5A, V
GS
= 4.5V, R
G
= 6Ω
18
31
nS
11
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICE ( T
J
= 25
°C
)
I
S
V
SD
t
rr
Q
rr
I
F
= 5A, V
GS
= 0V
I
F
= 5A, dl
F
/dt = 100A /mS
6.9
1
1.25
1
A
V
nS
nC
Pulse test : Pulse Width
300
msec,
Duty Cycle
2％.
Independent of operating temperature.
REV 1.0
2
2016/12/20
PM5G8EA
N-Channel Enhancement Mode MOSFET
REV 1.0
3
2016/12/20
PM5G8EA
N-Channel Enhancement Mode MOSFET
REV 1.0
4
2016/12/20
PM5G8EA
N-Channel Enhancement Mode MOSFET
REV 1.0
5
2016/12/20
51单片机
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