SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD
SOT-23 Plastic-Encapsulate MOSFETS
TF2301
P-Channel 20-V(D-S) MOSFET
V
(BR)DSS
-20V
TF2301
R
DS(on)
MAX
0.100Ω@-4.5V
0.130 Ω@-2.5V
I
D
-2.8A
SOT-23
3
1.GATE
2.SOURCE
1
3.DRAIN
2
General FEATURE
●
TrenchFET Power MOSFET
●
Lead free product is acquired
●
Surface mount package
APPLICATION
●
Load Switch for Portable Devices
●
DC/DC Converter
MARKING
Equivalent Circuit
-
A1sHB
w
*w：week code
Maximum ratings (T
a
=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Thermal Resistance from Junction to Ambient(t ≤5s)
Junction Temperature
Storage Temperature
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
R
θ
JA
T
J
T
stg
-20
±12
-2. 8
-10
-1.30
1.0
178
150
-55 ~+150
W
℃/W
℃
A
Value
Unit
V
www.sztuofeng.com
1
Feb,2018
V1.0
SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD
SOT-23 Plastic-Encapsulate MOSFETS
MOSFET ELECTRICAL CHARACTERISTICS
Ta =25
℃
unless otherwise specified
Parameter
Static
Drain-source breakdown voltage
Gate-source threshold voltage
Gate-source leakage
Zero gate voltage drain current
Drain-source on-state resistance
Forward transconductance
a
Dynamic
b
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Gate resistance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Drain-source body diode characteristics
Continuous source-drain diode current
Pulse diode forward current
Body diode voltage
Notes :
a.Pulse Test : Pulse Width < 300µs, Duty Cycle
≤2%.
b.Guaranteed b desi n gnot sub ect to roduction testin . g
y
,
j
p
a
TF2301
Symbol
Test Condition
Min
-20
-0.5
Typ
Max
Units
V
(BR)DSS
V
GS
= 0V, I
D
=-250µA
V
GS(th)
I
GSS
I
DSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
f =1MHz
V
DD
=-10V,
R
L
=5Ω,
I
D
=-1A,
V
GEN
=-4.5V,Rg=3Ω
V
DS
=-10V,V
GS
=-4.5V,I
D
=-3A
V
DS
=-10V,V
GS
=-2.5V,I
D
=-2A
V
DS
=-10V,V
GS
=0V,f =1MHz
V
DS
=V
GS
, I
D
=-250µA
V
DS
=0V, V
GS
=±10 V
V
DS
=-20V, V
GS
=0V
V
GS
=-4.5V, I
D
=-2.8A
V
GS
=-2.5V, I
D
=-2.0A
V
DS
=-5V, I
D
=-2.0A
-0.7
-1
±100
-1
V
nA
µA
Ω
S
0.090
0.110
4.0
6.5
285
58
32
5.5
2.9
045
0.75
6.0
9.8
4.9
20.5
7.0
0.100
0.130
pF
10
6
nC
Ω
20
60
50
20
ns
I
S
I
SM
V
SD
T
C
=25℃
-1.3
-10
a
A
V
I
S
=-1.0A
-0.8
-1.2
www.sztuofeng.com
2
Feb,2018
V1.0
SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD
SOT-23 Plastic-Encapsulate MOSFETS
Typical Electrical and Thermal Characteristics
t
on
t
r
90%
TF2301
t
d(on)
t
d(off)
t
off
t
f
90%
V
OUT
10%
INVERTED
10%
90%
V
IN
10%
50%
50%
PULSE WIDTH
Figure 1:Switching Test Circuit
2.8
Figure 2:Switching Waveforms
-I
D
- Drain Current (A）
2.1
P
D
Power(W)
1.4
0.7
0
T
J
-Junction Temperature(℃)
T
J
-Junction Temperature(℃)
Figure 3 Power Dissipation
Figure 4 Drain Current
-Vds Drain-Source Voltage (V)
Rdson On-Resistance(Ω)
I
D
- Drain Current (A)
-I
D
- Drain Current (A)
Figure 5 Output Characteristics
Figure 6 Drain-Source On-Resistance
www.sztuofeng.com
3
Feb,2018
V1.0
SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD
SOT-23 Plastic-Encapsulate MOSFETS
Normalized On-Resistance
TF2301
I
D
- Drain Current (A)
2.0
2.8A,
V
GS
=-4.5V
-Vgs Gate-Source Voltage (V)
T
J
-Junction Temperature(℃)
Figure 7 Transfer Characteristics
Rdson On-Resistance(Ω)
Figure 8 Drain-Source On-Resistance
2.8A
-Vgs Gate-Source Voltage (V)
C Capacitance (pF)
-Vds Drain-Source Voltage (V)
Figure 9 Rdson vs Vgs
-Vgs Gate-Source Voltage (V)
-I
s
- Reverse Drain Current (A)
Figure 10 Capacitance vs Vds
-2.8A
Qg Gate Charge (nC)
-Vsd Source-Drain Voltage (V)
Figure 11 Gate Charge
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4
Figure 12 Source- Drain Diode Forward
Feb,2018
V1.0
SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD
SOT-23 Plastic-Encapsulate MOSFETS
TF2301
I
D
- Drain Current (A)
Vds Drain-Source Voltage (V)
Figure 13 Safe Operation Area
r(t),Normalized Effective
Transient Thermal Impedance
Square Wave Pluse Duration(sec)
Figure 14 Normalized Maximum Transient Thermal Impedance
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5
Feb,2018
V1.0
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