GD100HFF120C1S
IGBT Module
STARPOWER
SEMICONDUCTOR
IGBT
GD100HFF120C1S
1200V/100A 2 in one-package
General Description
STARPOWER IGBT Power Module provides ultra
switching speed as well as short circuit ruggedness.
They are designed for the applications such as
electronic welder and inductive heating.
Features
Low V
CE(sat)
Trench IGBT technology
V
CE(sat)
with positive temperature coefficient
Low switching losses
Maximum junction temperature 175
o
C
Low inductance case
Fast & soft reverse recovery anti-parallel FWD
Isolated copper baseplate using DBC technology
Typical Applications
Switching mode power supply
Inductive heating
Electronic welder
Equivalent Circuit Schematic
©2016 STARPOWER Semiconductor Ltd.
1/27/2016
1/9
UX01
GD100HFF120C1S
IGBT Module
Absolute Maximum Ratings
T
C
=25
o
C unless otherwise noted
IGBT
Symbol
V
CES
V
GES
I
C
I
CM
P
D
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current @ T
C
=25
o
C
@ T
C
=85
o
C
Pulsed Collector Current t
p
=1ms
Maximum Power Dissipation @ T
j
=175
o
C
Value
1200
±20
149
100
200
511
Unit
V
V
A
A
W
Diode
Symbol
V
RRM
I
F
I
FM
Description
Repetitive Peak Reverse Voltage
Diode Continuous Forward Current
Diode Maximum Forward Current t
p
=1ms
Value
1200
100
200
Unit
V
A
A
Module
Symbol
T
jmax
T
jop
T
STG
V
ISO
Description
Maximum Junction Temperature
Operating Junction Temperature
Storage Temperature Range
Isolation Voltage RMS,f=50Hz,t=1min
Value
175
-40 to +150
-40 to +125
4000
Unit
o
C
o
C
o
C
V
©2016 STARPOWER Semiconductor Ltd.
1/27/2016
2/9
UX01
GD100HFF120C1S
IGBT Module
IGBT Characteristics
T
C
=25
o
C unless otherwise noted
Symbol
Parameter
Test Conditions
I
C
=100A,V
GE
=15V,
T
j
=25
o
C
I
C
=100A,V
GE
=15V,
T
j
=125
o
C
I
C
=100A,V
GE
=15V,
T
j
=150
o
C
I
C
=2.5mA,V
CE
=V
GE
,
T
j
=25
o
C
V
CE
=V
CES
,V
GE
=0V,
T
j
=25
o
C
V
GE
=V
GES
,V
CE
=0V,
T
j
=25
o
C
Min.
Typ.
1.90
2.40
2.55
5.2
6.0
6.8
1.0
100
7.5
374
50
326
204
6.9
5.2
419
63
383
218
10.4
5.9
419
65
388
222
11.5
6.0
V
mA
nA
Ω
ns
ns
ns
ns
mJ
mJ
ns
ns
ns
ns
mJ
mJ
ns
ns
ns
ns
mJ
mJ
Max.
2.35
V
Unit
V
CE(sat)
Collector to Emitter
Saturation Voltage
V
GE(th)
I
CES
I
GES
R
Gint
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
Gate-Emitter Threshold
Voltage
Collector Cut-Off
Current
Gate-Emitter Leakage
Current
Internal Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching
Loss
Turn-Off Switching
Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching
Loss
Turn-Off Switching
Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching
Loss
Turn-Off Switching
Loss
V
CC
=600V,I
C
=100A,
R
G
=1.5Ω,V
GE
=±15V,
T
j
=25
o
C
V
CC
=600V,I
C
=100A,
R
G
=1.5Ω,V
GE
=±15V,
T
j
=125
o
C
V
CC
=600V,I
C
=100A,
R
G
=1.5Ω,V
GE
=±15V,
T
j
=150
o
C
©2016 STARPOWER Semiconductor Ltd.
1/27/2016
3/9
UX01
GD100HFF120C1S
IGBT Module
Diode Characteristics
T
C
=25
o
C unless otherwise noted
Symbol
V
F
Q
r
I
RM
E
rec
Q
r
I
RM
E
rec
Q
r
I
RM
E
rec
Parameter
Diode Forward
Voltage
Recovered Charge
Peak Reverse
Recovery Current
Reverse Recovery
Energy
Recovered Charge
Peak Reverse
Recovery Current
Reverse Recovery
Energy
Recovered Charge
Peak Reverse
Recovery Current
Reverse Recovery
Energy
Test Conditions
I
F
=100A,V
GE
=0V,T
j
=25
o
C
I
F
=100A,V
GE
=0V,T
j
=125
o
C
I
F
=100A,V
GE
=0V,T
j
=150
o
C
V
R
=600V,I
F
=100A,
-di/dt=1600A/μs,V
GE
=-15V
T
j
=25
o
C
Min.
Typ.
1.90
1.90
1.90
5.1
45
1.7
13.1
V
R
=600V,I
F
=100A,
-di/dt=1600A/μs,V
GE
=-15V
T
j
=125
o
C
66
4.9
15.2
V
R
=600V,I
F
=100A,
-di/dt=1600A/μs,V
GE
=-15V
T
j
=150
o
C
71
5.7
Max.
2.35
Unit
V
μC
A
mJ
μC
A
mJ
μC
A
mJ
Module Characteristics
T
C
=25
o
C unless otherwise noted
Symbol
L
CE
R
CC’+EE’
R
thJC
R
thCH
M
G
Parameter
Stray Inductance
Module Lead Resistance, Terminal to Chip
Junction-to-Case (per IGBT)
Junction-to-Case (per Diode)
Case-to-Heatsink (per IGBT)
Case-to-Heatsink (per Diode)
Case-to-Heatsink (per Module)
Terminal Connection Torque, Screw M5
Mounting Torque, Screw M6
Weight of Module
Min.
Typ.
30
0.65
Max.
Unit
nH
mΩ
K/W
K/W
5.0
5.0
150
N.m
g
0.278
0.418
0.167
0.250
0.050
2.5
3.0
©2016 STARPOWER Semiconductor Ltd.
1/27/2016
4/9
UX01
GD100HFF120C1S
200
V
GE
=15V
150
150
200
V
CE
=20V
IGBT Module
I
C
[A]
100
I
C
[A]
Tj=25℃
Tj=125℃
100
50
50
Tj=25℃
Tj=125℃
Tj=150℃
0
0
0.5
1
Tj=150℃
0
3.5
5
6
7
8 9 10 11 12 13
V
GE
[V]
1.5 2 2.5
V
CE
[V]
3
Fig 1. IGBT Output Characteristics
30
Eon Tj=125℃
Eoff Tj=125℃
Eon Tj=150℃
Eoff Tj=150℃
Fig 2. IGBT Transfer Characteristics
28
24
20
Eon Tj=125℃
Eoff Tj=125℃
Eon Tj=150℃
Eoff Tj=150℃
25
20
E [mJ]
15
E [mJ]
V
CC
=600V
R
G
=1.5Ω
V
GE
=±15V
16
12
8
V
CC
=600V
I
C
=100A
V
GE
=±15V
10
5
4
0
0
50
100
I
C
[A]
150
200
0
3
6
9
R
G
[Ω]
12
15
0
Fig 3. IGBT Switching Loss vs. I
C
©2016 STARPOWER Semiconductor Ltd.
Fig 4. IGBT Switching Loss vs. R
G
1/27/2016
5/9
UX01
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