GD10PJX120L2S
IGBT Module
STARPOWER
SEMICONDUCTOR
IGBT
GD10PJX120L2S
1200V/10A PIM in one-package
General Description
STARPOWER IGBT Power Module provides ultra
low conduction loss as well as short circuit ruggedness.
They are designed for the applications such as
general inverters and UPS.
Features
Low V
CE(sat)
Trench IGBT technology
10μs short circuit capability
V
CE(sat)
with positive temperature coefficient
Maximum junction temperature 175
o
C
Low inductance case
Fast & soft reverse recovery anti-parallel FWD
Isolated heatsink using DBC technology
Typical Applications
Inverter for motor drive
AC and DC servo drive amplifier
Uninterruptible power supply
Equivalent Circuit Schematic
©2018 STARPOWER Semiconductor Ltd.
4/23/2018
1/13
SX0B
GD10PJX120L2S
IGBT Module
Absolute Maximum Ratings
T
C
=25
o
C unless otherwise noted
IGBT-inverter
Symbol
V
CES
V
GES
I
C
I
CM
P
D
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current @ T
C
=25
o
C
@ T
C
=100
o
C
Pulsed Collector Current t
p
=1ms
Maximum Power Dissipation @ T
j
=175
o
C
Value
1200
±20
20
10
20
133
Unit
V
V
A
A
W
Diode-inverter
Symbol
V
RRM
I
F
I
FM
Description
Repetitive Peak Reverse Voltage
Diode Continuous Forward Current
Diode Maximum Forward Current t
p
=1ms
Value
1200
10
20
Unit
V
A
A
Diode-rectifier
Symbol
V
RRM
I
O
I
FSM
I
2
t
Description
Repetitive Peak Reverse Voltage
Average Output Current 50Hz/60Hz,sine wave
Surge Forward Current t
p
=10ms @ T
j
=25
o
C
@ T
j
=150
o
C
I
2
t-value,t
p
=10ms @ T
j
=25
o
C
@ T
j
=150
o
C
Value
1600
10
300
245
450
300
Unit
V
A
A
A
2
s
IGBT-brake
Symbol
V
CES
V
GES
I
C
I
CM
P
D
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current @ T
C
=25
o
C
@ T
C
=100
o
C
Pulsed Collector Current t
p
=1ms
Maximum Power Dissipation @ T
j
=175
o
C
Value
1200
±20
20
10
20
133
Unit
V
V
A
A
W
Diode-brake
Symbol
V
RRM
I
F
I
FM
Description
Repetitive Peak Reverse Voltage
Diode Continuous Forward Current
Diode Maximum Forward Current t
p
=1ms
Value
1200
10
20
Unit
V
A
A
Module
Symbol
T
jmax
T
jop
T
STG
V
ISO
Description
Maximum Junction Temperature(inverter,brake)
Maximum Junction Temperature (rectifier)
Operating Junction Temperature
Storage Temperature Range
Isolation Voltage RMS,f=50Hz,t=1min
Value
175
150
-40 to +150
-40 to +125
2500
Unit
o
o
o
C
C
C
V
©2018 STARPOWER Semiconductor Ltd.
4/23/2018
2/13
SX0B
GD10PJX120L2S
IGBT Module
Diode-inverter Characteristics
T
C
=25
o
C unless otherwise noted
Symbol
V
F
Q
r
I
RM
E
rec
Q
r
I
RM
E
rec
Q
r
I
RM
E
rec
Parameter
Diode Forward
Voltage
Recovered Charge
Peak Reverse
Recovery Current
Reverse Recovery
Energy
Recovered Charge
Peak Reverse
Recovery Current
Reverse Recovery
Energy
Recovered Charge
Peak Reverse
Recovery Current
Reverse Recovery
Energy
Test Conditions
I
F
=10A,V
GE
=0V,T
j
=25
o
C
I
F
=10A,V
GE
=0V,T
j
=125
o
C
I
F
=10A,V
GE
=0V,T
j
=150
o
C
V
R
=600V,I
F
=10A,
-di/dt=500A/μs,V
GE
=-15V
T
j
=25
o
C
Min.
Typ.
1.85
2.05
2.10
0.86
8
0.23
1.6
V
R
=600V,I
F
=10A,
-di/dt=500A/μs,V
GE
=-15V
T
j
=125
o
C
10
0.49
1.8
V
R
=600V,I
F
=10A,
-di/dt=500A/μs,V
GE
=-15V
T
j
=150
o
C
11
0.56
Max.
2.30
Unit
V
μC
A
mJ
μC
A
mJ
μC
A
mJ
Diode-rectifier Characteristics
T
C
=25
o
C unless otherwise noted
Symbol
V
F
I
R
Parameter
Diode Forward
Voltage
Reverse Current
Test Conditions
I
F
=10A,T
j
=150
o
C
T
j
=150
o
C,V
R
=1600V
Min.
Typ.
0.83
2.0
Max.
Unit
V
mA
©2018 STARPOWER Semiconductor Ltd.
4/23/2018
4/13
SX0B
嵌入式系统
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