DG25X12T2
IGBT Discrete
DOSEMI
IGBT
DG25X12T2
1200V/25A IGBT with Diode
General Description
DOSEMI IGBT Power Discrete provides ultra
low conduction loss as well as low switching loss.
They are designed for the applications such as
general inverters and UPS.
Features
Low V
CE(sat)
Trench IGBT technology
10μs short circuit capability
Low switching loss
Maximum junction temperature 175
o
C
Low inductance case
V
CE(sat)
with positive temperature coefficient
Fast & soft reverse recovery anti-parallel FWD
Lead free package
Typical Applications
Inverter for motor drive
AC and DC servo drive amplifier
Uninterruptible power supply
Equivalent Circuit Schematic
©2019 STARPOWER Semiconductor Ltd.
1/11/2019
1/9
Preliminary
DG25X12T2
IGBT Discrete
Absolute Maximum Ratings
T
C
=25
o
C unless otherwise noted
IGBT
Symbol
V
CES
V
GES
I
C
I
CM
P
D
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current @ T
C
=25
o
C
@ T
C
=110
o
C
Pulsed Collector Current t
p
limited by T
jmax
Maximum Power Dissipation @ T
j
=175
o
C
Value
1200
±20
50
25
100
573
Unit
V
V
A
A
W
Diode
Symbol
V
RRM
I
F
I
FM
Description
Repetitive Peak Reverse Voltage
Diode Continuous Forward Current @ T
C
=110
o
C
Diode Maximum Forward Current t
p
limited by T
jmax
Value
1200
25
100
Unit
V
A
A
Discrete
Symbol
T
jop
T
STG
T
S
M
Description
Operating Junction Temperature
Storage Temperature Range
Soldering Temperature,1.6mm from case for 10s
Mounting Torque, Screw M3
Values
-40 to +175
-55 to +150
260
0.6
Unit
o
C
o
C
o
C
N.m
©2019 STARPOWER Semiconductor Ltd.
1/11/2019
2/9
Preliminary
DG25X12T2
IGBT Discrete
IGBT Characteristics
T
C
=25
o
C unless otherwise noted
Symbol
Parameter
Test Conditions
I
C
=25A,V
GE
=15V,
T
j
=25
o
C
I
C
=25A,V
GE
=15V,
T
j
=125
o
C
I
C
=25A,V
GE
=15V,
T
j
=150
o
C
I
C
=0.63mA,V
CE
=V
GE
,
T
j
=25
o
C
V
CE
=V
CES
,V
GE
=0V,
T
j
=25
o
C
V
GE
=V
GES
,V
CE
=0V,
T
j
=25
o
C
V
CE
=25V,f=1MHz,
V
GE
=0V
V
GE
=-15…+15V
Min.
Typ.
1.70
1.95
2.00
5.2
6.0
6.8
1.0
400
0
2.59
0.07
0.19
28
17
196
185
1.71
1.49
28
21
288
216
2.57
2.21
28
22
309
227
2.78
2.42
t
P
≤10μs,V
GE
=15V,
T
j
=150
o
C,V
CC
=900V,
V
CEM
≤1200V
100
V
mA
nA
Ω
nF
nF
μC
ns
ns
ns
ns
mJ
mJ
ns
ns
ns
ns
mJ
mJ
ns
ns
ns
ns
mJ
mJ
A
Max.
2.15
V
Unit
V
CE(sat)
Collector to Emitter
Saturation Voltage
V
GE(th)
I
CES
I
GES
R
Gint
C
ies
C
res
Q
G
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
I
SC
Gate-Emitter Threshold
Voltage
Collector Cut-Off
Current
Gate-Emitter Leakage
Current
Internal Gate Resistance
Input Capacitance
Reverse Transfer
Capacitance
Gate Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching
Loss
Turn-Off Switching
Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching
Loss
Turn-Off Switching
Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching
Loss
Turn-Off Switching
Loss
SC Data
V
CC
=600V,I
C
=25A,
R
G
=20Ω,V
GE
=±15V,
T
j
=25
o
C
V
CC
=600V,I
C
=25A,
R
G
=20Ω,V
GE
=±15V,
T
j
=125
o
C
V
CC
=600V,I
C
=25A,
R
G
=20Ω,V
GE
=±15V,
T
j
=150
o
C
©2019 STARPOWER Semiconductor Ltd.
1/11/2019
3/9
Preliminary
DG25X12T2
IGBT Discrete
Diode Characteristics
T
C
=25
o
C unless otherwise noted
Symbol
V
F
Q
r
I
RM
E
rec
Q
r
I
RM
E
rec
Q
r
I
RM
E
rec
Parameter
Diode Forward
Voltage
Recovered Charge
Peak Reverse
Recovery Current
Reverse Recovery
Energy
Recovered Charge
Peak Reverse
Recovery Current
Reverse Recovery
Energy
Recovered Charge
Peak Reverse
Recovery Current
Reverse Recovery
Energy
Test Conditions
I
F
=25A,V
GE
=0V,T
j
=25
o
C
I
F
=25A,V
GE
=0V,T
j
=125
o
C
I
F
=25A,V
GE
=0V,T
j
=150
o
C
V
R
=600V,I
F
=25A,
-di/dt=880A/μs,V
GE
=-15V
T
j
=25
o
C
Min.
Typ.
2.20
2.30
2.25
1.43
34
0.75
2.4
V
R
=600V,I
F
=25A,
-di/dt=880A/μs,V
GE
=-15V
T
j
=125
o
C
42
1.61
2.6
V
R
=600V,I
F
=25A,
-di/dt=880A/μs,V
GE
=-15V
T
j
=150
o
C
44
2.10
Max.
2.65
Unit
V
μC
A
mJ
μC
A
mJ
μC
A
mJ
Discrete Characteristics
T
C
=25
o
C unless otherwise noted
Symbol
R
thJC
R
thJA
Parameter
Junction-to-Case (per IGBT)
Junction-to-Case (per Diode)
Junction-to-Ambient
Min.
Typ.
Max.
0.262
0.495
Unit
K/W
K/W
40
©2019 STARPOWER Semiconductor Ltd.
1/11/2019
4/9
Preliminary
DG25X12T2
50
V
GE
=15V
40
40
50
V
CE
=20V
IGBT Discrete
30
I
C
[A]
I
C
[A]
20
30
20
10
Tj=25℃
Tj=125℃
Tj=150℃
10
Tj=25℃
Tj=125℃
Tj=150℃
0
0
0.5
1
1.5 2 2.5
V
CE
[V]
3
3.5
0
5
6
7
8
9 10 11 12 13
V
GE
[V]
Fig 1. IGBT-inverter Output Characteristics
10
9
8
7
6
E [mJ]
5
4
3
2
1
0
0
10
20
30
I
C
[A]
40
50
Eon Tj=125℃
Eoff Tj=125℃
Eon Tj=150℃
Eoff Tj=150℃
Fig 2. IGBT-inverter Transfer Characteristics
14
12
10
Eon Tj=125℃
Eoff Tj=125℃
Eon Tj=150℃
Eoff Tj=150℃
E [mJ]
V
CC
=600V
R
G
=20Ω
V
GE
=±15V
8
6
4
2
0
0
V
CC
=600V
I
C
=25A
V
GE
=±15V
40
80
120
R
G
[Ω]
160
200
Fig 3. IGBT-inverter Switching Loss vs. I
C
©2019 STARPOWER Semiconductor Ltd.
Fig 4. IGBT-inverter Switching Loss vs. R
G
1/11/2019
5/9
Preliminary
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