SW12N70D
N-channel Enhanced mode TO-220F/TO-262/TO-220SF/TO-220FT MOSFET
Features
High ruggedness
Low R
DS(ON)
(Typ 0.75Ω)@V
GS
=10V
Low Gate Charge (Typ 47nC)
Improved dv/dt Capability
100% Avalanche Tested
Application:LED, PC Power, Charge
TO-220F TO-262 TO-220SF TO-220FT
BV
DSS
: 700V
I
D
: 12A
R
DS(ON)
: 0.75Ω
1
2
1
3
2
2
1
3
2
1
3
2
3
1
3
1. Gate 2. Drain 3. Source
General Description
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.
Order Codes
Item
1
2
3
4
Sales Type
SW F 12N70D
SW U 12N70D
SW MN 12N70D
SW Y 12N70D
Marking
SW12N70D
SW12N70D
SW12N70D
SW12N70D
Package
TO-220F
TO-262
TO-220SF
TO-220FT
Packaging
TUBE
TUBE
TUBE
TUBE
Absolute maximum ratings
Value
Symbol
V
DSS
I
D
I
DM
V
GS
E
AS
E
AR
dv/dt
P
D
T
STG
, T
J
T
L
Drain to source voltage
Continuous drain current (@T
C
=25
o
C)
Continuous drain current (@T
C
=100
o
C)
Drain current pulsed
Gate to source voltage
Single pulsed avalanche energy
Repetitive avalanche energy
Peak diode recovery dv/dt
Total power dissipation (@T
C
=25
o
C)
Derating factor above 25
o
C
Operating junction temperature & storage temperature
Maximum lead temperature for soldering
purpose, 1/8 from case for 5 seconds.
(note 2)
(note 1)
(note 3)
26.1
0.2
(note 1)
Parameter
TO-220F
TO-262
700
12*
7.6*
48
±
30
608
36
5
89.3
0.7
-55 ~ + 150
300
37.9
0.3
TO-220SF Unit
/TO-220FT
V
A
A
A
V
mJ
mJ
V/ns
W
W/
o
C
o
C
o
C
*. Drain current is limited by junction temperature.
Thermal characteristics
Value
Symbol
R
thjc
R
thja
Parameter
Thermal resistance, Junction to case
Thermal resistance, Junction to ambient
TO-220F
4.7
48
TO-262
1.4
67
TO-220SF
/TO-220FT
3.3
49
Unit
o
C/W
o
C/W
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Feb. 2017. Rev. 4.0
1/7
SW12N70D
Electrical characteristic
( T
C
= 25
o
C unless otherwise specified )
Symbol
Off characteristics
BV
DSS
ΔBV
DSS
/ ΔT
J
I
DSS
Drain to source breakdown voltage
Breakdown voltage temperature
coefficient
Drain to source leakage current
Gate to source leakage current, forward
I
GSS
Gate to source leakage current, reverse
V
GS
=0V, I
D
=250uA
I
D
=250uA, referenced to 25
o
C
V
DS
=700V, V
GS
=0V
V
DS
=560V, T
C
=125
o
C
V
GS
=30V, V
DS
=0V
V
GS
=-30V, V
DS
=0V
700
0.55
1
50
100
-100
V
V/
o
C
uA
uA
nA
nA
Parameter
Test conditions
Min.
Typ.
Max.
Unit
On characteristics
V
GS(TH)
R
DS(ON)
G
fs
Gate threshold voltage
Drain to source on state resistance
Forward transconductance
V
DS
=V
GS
, I
D
=250uA
V
GS
=10V, I
D
=6A
V
DS
=30V, I
D
=6A
2.5
0.75
11
4.5
0.87
V
Ω
S
Dynamic characteristics
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
R
g
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn on delay time
Rising time
Turn off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Gate resistance
V
DS
=0V, Scan F mode
V
DS
=560V, V
GS
=10V, I
D
=12A
(note 4,5)
V
DS
=350V, I
D
=12A, R
G
=25Ω,
V
GS
=10V
(note 4,5)
V
GS
=0V, V
DS
=25V, f=1MHz
2450
154
25
26
43
ns
107
43
47
11
20
1.8
Ω
nC
pF
Source to drain diode ratings characteristics
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
Parameter
Continuous source current
Pulsed source current
Diode forward voltage drop.
Reverse recovery time
Reverse recovery charge
Test conditions
Integral reverse p-n Junction
diode in the MOSFET
I
S
=12A, V
GS
=0V
I
S
=12A, V
GS
=0V,
dI
F
/dt=100A/us
415
5.8
Min.
Typ.
Max.
12
48
1.4
Unit
A
A
V
ns
uC
※.
Notes
1.
Repeatitive rating : pulse width limited by junction temperature.
2.
L = 19mH, I
AS
= 8A, V
DD
= 50V, R
G
=25Ω, Starting T
J
= 25
o
C
3.
I
SD
≤ 12A, di/dt = 100A/us, V
DD
≤ BV
DSS
, Staring T
J
=25
o
C
4.
Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2%
5.
Essentially independent of operating temperature.
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Feb. 2017. Rev. 4.0
2/7
SW12N70D
Fig. 1. On-state characteristics
Fig. 2. Transfer characteristics
Fig. 3. On-resistance variation vs.
drain current and gate voltage
Fig. 4. On state current vs. diode
forward voltage
Fig 5. Breakdown Voltage Variation
vs. Junction Temperature
Fig. 6. On resistance variation
vs. junction temperature
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Feb. 2017. Rev. 4.0
3/7
SW12N70D
Fig. 7. Maximum safe operating area（TO-220F）
Fig. 8. Maximum safe operating area（TO-262）
Fig. 9. Maximum safe operating area（TO-220SF/TO-220FT）
Fig. 10. Gate charge characteristics
Fig. 11. Capacitance Characteristics
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Feb. 2017. Rev. 4.0
4/7
SW12N70D
Fig. 12. Transient thermal response curve（TO-220F）
Fig. 13. Transient thermal response curve（TO-262）
Fig. 14. Transient thermal response curve（TO-220SF/TO-220FT）
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Feb. 2017. Rev. 4.0
5/7
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